Abstract: Disclosed are a semiconductor device and a method of manufacturing the same. More particularly, a semiconductor device and a method of manufacturing the same are disclosed, including a device isolation structure with a pre-DTI structure and/or a DTI structure having at least one corner region with a cut shape/corner or truncation in a plan view, thereby reducing or preventing the occurrence of defects during formation of the device isolation structure and in a subsequent CMP process.

Abstract: The present invention relates to a wave control apparatus using change of elastic modulus of thermoresponsive material, comprising: a wave modulation member having thermoresponsive material whose elastic modulus changes according to temperature variation, a wave source propagating wave through the wave modulation member, and a heating unit forming a wave modulation region by heating the wave modulation member, wherein the wave propagating through the wave modulation member from the wave source is configured to change wave characteristics when the wave passes through the wave modulation region heated by the heating unit.

Abstract: Disclosed is a semiconductor device including a low voltage device located on a first substrate and driven with a first level voltage, and a high voltage device located on a second substrate, driven with a second level voltage higher than the first level voltage, and coupled to the low voltage device, wherein the low voltage device includes a FinFET, wherein the high voltage device includes a planar FET.

Abstract: An example operation may include one or more of receiving, by a file processing node, a document file identification (ID) from a file owner node over a blockchain, acquiring, by the file processing node, a file storage plan executable script and an encrypted symmetric key for the document, decrypting the symmetric key by the file processing node, and executing the file storage plan executable script using the decrypted symmetric key as an input.

Abstract: A semiconductor device according to the present disclosure includes a low-voltage device configured to receive a first level voltage and a first middle-voltage device configured to receive a second level voltage higher than the first level voltage. The low-voltage device includes a low-voltage well region, the first middle-voltage device includes a 1-1st middle-voltage well region and a 1-2nd middle-voltage well region, and the low-voltage well region and the 1-1st middle-voltage well region have a first well concentration with respect to a first conductivity type impurity.

Abstract: Provided is a humidity responsive energy harvester. The humidity responsive energy harvester may include: a substrate structure including a carbon fiber; a first harvesting structure disposed on the substrate structure and including a polymer that changes a concentration of hydrogen ions in response to humidity; and a second harvesting structure disposed on the first harvesting structure and including a carbon fiber coated with an active material which includes a composite of a transition metal and an oxide of the transition metal, wherein when the polymer in the first harvesting structure changes the concentration of hydrogen ions in response to the humidity, energy may be generated due to a difference in redox reaction of the second harvesting structure.

Abstract: Disclosed herein are a method for processing a retransmission broadcast signal using multi-antenna signals based on channel bonding and an apparatus for the same. The apparatus includes a stream multiplexing (muxing) unit for generating a single piece of input data from signals received from two or more reception channels, an input formatting unit for converting the input data into a Physical Layer Pipe (PLP), a stream partitioning unit for segmenting the physical layer pipe into pieces of data to be respectively transmitted over two or more transmission channels, and two or more retransmission-signal-processing units for retransmitting the pieces of data to the respective transmission channels corresponding thereto through multiple transmission antennas.

Abstract: A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

Abstract: An adaptive multi-view streaming processing method and apparatus for a multi-view stream is disclosed. Specifically, disclosed herein is a method and apparatus for adaptively processing or transmitting adaptive streaming by reflecting network states and changes in transmission environments in a multi-view streaming service environment where several or more multiple videos are simultaneously transmitted at an arbitrary moment. An adaptive streaming processing method for a multi-view stream may comprise selecting and downloading an i-th segment of a main view stream with a first quality level, inferring a size of an i-th segment of downloadable neighboring view streams based on a download time and transfer rate of the i-th segment of the main view stream, and selecting a second quality level corresponding to the inferred size of the i-th segment of the neighboring view streams and downloading the i-th segment of the neighboring view streams based on the selected second quality level.

Abstract: Disclosed herein is a method for receiving adaptive media streaming. The method may include calculating segment download time for each video quality level based on network throughput, a segment bitrate for the video quality level, segment duration, and a standard deviation of segment bitrates, determining a segment bitrate for maximizing the quality of viewing experience of a user based on the segment download time for each video quality level and a buffer level received from a playback buffer, making a request for the determined segment bitrate, transferring the request to a server, and transferring a corresponding video segment received in response to the request to the playback buffer.

Abstract: A method of manufacturing a binder-free electrode includes hydrothermally synthesizing a transition metal oxide-based active material on a 3D porous substrate; and using electrothermal waves on the substrate on which the transition metal oxide-based active material is hydrothermally synthesized. Consequently, a transition metal oxide/conductive substrate composite can be synthesized within a few seconds.

Abstract: Disclosed herein are a hybrid download method and apparatus for multiview streaming. The hybrid download method includes requesting a group download for an n?1-th segment from a server, playing an n?3-th segment at a viewpoint VP1 of a viewer, when a group download request for the n?1-th segment is completed, making a group download request for an n-th segment, when a change in a viewpoint of the viewer occurs at a time at which an n?2-th segment is played, playing a low-quality n?2-th segment at a viewpoint VP3, when the group download for the n-th segment is completed, requesting a single download for a high-quality n?1-th segment corresponding to the viewpoint VP3 from the server, and when the single download for the high-quality n?1-th segment corresponding to the viewpoint VP3 is completed, playing the high-quality n?1-th segment at the viewpoint VP3.

Abstract: A battery bank control device is provided for setting a power limit value of a battery bank in which a plurality of battery racks (BRs) are connected in parallel. The device includes: a voltage measurement unit measuring a voltage of each BR of the plurality of BRs; a first power limit calculation unit calculating a first power limit value according to a state of charge (SOC) calculated based on the voltage of each BR with respect to each BR; a capacity ratio calculation unit calculating a capacity ratio of each BR based on capacity information of the plurality of BRs; a second power limit calculation unit calculating a second power limit value using the capacity ratio and the first power limit value of each BR; and a battery bank power limit calculation unit calculating a battery bank power limit value using the second power limit value of each BR.

Abstract: A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.

Abstract: A method of a wearable device displaying icons is provided. The method includes displaying a plurality of circular icons comprising a first circular icon located in a center area of a touch display in a first size and a second circular icon located outside of the center area of the touch display in a second size smaller than the first size, and based on a direction of a touch input received on the touch display, moving the plurality of circular icons such that the first circular icon is moved to a first position located outside of the center area of the touch display and the second circular icon is moved from a second position located outside the center area of the touch display to the center area of the touch display and enlarged in size from the second size to the first size.

Abstract: A display device comprises a substrate; a driving transistor including a first active layer and a switching transistor including a second active layer, the first active layer and the second active layer being disposed on the substrate; a first gate insulating layer disposed on the first active layer of the driving transistor and the second active layer of the switching transistor; first and second gate electrodes disposed on the first gate insulating layer to overlap the first active layer of the driving transistor and the second active layer of the switching transistor, respectively; a first interlayer insulating layer disposed on the first gate electrode and the second gate electrode; and a second interlayer insulating layer disposed on the first interlayer insulating layer to overlap the first active layer without overlapping the second active layer in a plan view.

Abstract: Disclosed herein is a semiconductor device including: a first middle-voltage element disposed in a substrate and configured to receive a first level middle-voltage; a second middle-voltage element disposed in the substrate and configured to receive a second level middle-voltage greater than the first level middle-voltage; and a deep well disposed in the substrate so as to surround the first middle-voltage element and the second middle-voltage element, wherein the second middle-voltage element includes: a second-first middle-voltage well doped with a first type dopant; and a second-second middle-voltage well doped with a second type dopant different from the first type dopant.

Abstract: A semiconductor memory device includes n physical banks, each of which is configured to be entirely or partially included in one of a first logic bank or a second logic bank and arranged in a row direction, wherein n is an integer that is greater than or equal to 3, and wherein a proportion of a sum of respective widths of the n physical banks in the row direction to a height of the n physical banks in a column direction is a real number multiple that is not a multiple of 2.

Abstract: Disclosed are a laser bonding apparatus and a laser bonding method capable of bonding an electronic component to a three-dimensional structure having a regular or irregular shape in a curved portion such as an automobile tail lamp or a headlamp. The laser bonding apparatus and method for a three-dimensional structure may prevent misalignment and poor bonding of the electronic component with respect to the three-dimensional structure.