Abstract: A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an organic auxiliary layer between the first electrode and the photoelectric conversion layer and having a higher charge mobility than a charge mobility of the photoelectric conversion layer. An organic sensor may include the photoelectric conversion device. An electronic device may include the organic sensor.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: An electronic device according to various embodiments may include: a display; a rear plate disposed in a direction opposite to the display; a side member surrounding a space between the display and the rear plate and including a support member configured to support the display; and at least one magnetic structure included in at least a portion of the side member. Where the at least one magnetic structure includes a magnetic force generating source and a magnetic force output guide connected to the magnetic force generating source, and at least a portion of the magnetic force output guide extends in a direction of the display. Where at least a portion of the magnetic force output guide includes a structure formed in a direction of an upper surface of the side member.

Abstract: A sensor embedded display panel includes a substrate, a light emitting element on the substrate and including an emission layer; and a photoelectric element on the substrate. The photoelectric element includes a light absorbing layer. The light absorbing layer at least partially overlaps the emission layer in a horizontal direction extending in parallel to an upper surface of the substrate. The light emitting element and the photoelectric element each include a separate portion of a first common auxiliary layer that extends on tops of the emission layer and the light absorbing layer and a separate portion of a second common auxiliary layer that extends on bottoms of the emission layer and the light absorbing layer. The photoelectric element further includes an auxiliary layer that has a thickness corresponding to one of a red wavelength spectrum, a green wavelength spectrum, or a blue wavelength spectrum.

Abstract: A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

Abstract: A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.

Abstract: An electronic device is provided.

Abstract: According to various embodiments, an electronic device may include: a housing including an opening connected to an internal space of the electronic device; a tray socket connected to outside the electronic device through the opening in the internal space and including a tray reception space; a tray configured to be inserted into the tray reception space, wherein the tray includes a tray body including at least one space configured to receive at least one external component; and a tray cover including a pin insertion hole configured to guide a tray ejecting pin to the opening; an eject bar movably disposed in a tray mounting direction or ejecting direction in the tray reception space and facing the pin insertion hole; and a rotation lever configured to press the tray in the ejection direction based on pressing of the eject bar in the tray reception space, wherein the eject bar is disposed at a position at least partially overlapping the tray body when viewed from above the tray socket.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: According to various embodiments of the disclosure, an electronic device may comprise: a foldable housing including a hinge structure comprising a hinge, a first housing connected to the hinge structure and including a first surface and a second surface spaced apart from the first surface and inclined at a first angle with respect to the first surface and a second housing connected to the hinge structure and including a third surface and a fourth surface spaced apart from the third surface, wherein in a folded state, the first surface faces the third surface and, in a fully unfolded state, a direction in which the first surface faces is identical to a direction in which the third surface faces, a first support disposed in the first housing and including a fifth surface inclined at a second angle different from the first angle with respect to the first surface, a first battery disposed on the fifth surface, and a display including a display panel extending from the first surface to the third surface and a disp

Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(10)(° C.)?Tm1(° C.)?Ts1(10)(° C.

Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

Abstract: A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.

Abstract: Various embodiments include an input circuit comprising: a pull-up resistor having one end thereof connected to an input terminal; a switch unit for establishing/blocking a connection between the other end of the pull-up resistor and a battery; and a dark current reduction unit connected between the other end of the pull-up resistor and the switch unit, and enabling different current paths to be formed in a normal mode and in a low power mode. The dark current reduction unit enables a current path in the low power mode to have a higher resistance than a current path in the normal mode.

Abstract: The present disclosure relates to a radar sensor apparatus for a vehicle, a method of detecting an object using the radar sensor apparatus, and an antenna apparatus for the radar sensor apparatus. The antenna apparatus includes N (N is an even number greater than or equal to 4) transmitting antennas and a divider. Since the divider is configured such that a preset value is set on a power ratio that is a ratio of power supplied to each transmitting antenna and a phase ratio that is a ratio of phase of a signal transmitted from each transmitting antenna, it is possible to detect a mid/long range target and a short range target simultaneously.

Abstract: A sensor-embedded display panel includes a substrate, first, second, and third light emitting elements on the substrate, the first, second, and third light emitting elements including separate, respective light emitting layers, and a light absorbing layer on the substrate, the light absorbing layer being in parallel with the light emitting layer along the surface direction of the substrate, wherein the first, second, and third light emitting elements and the light absorption sensor include a first common auxiliary layer that is continuously disposed on the light emitting layers and the light absorbing layer, and a common electrode on the first common auxiliary layer and configured to apply a common voltage to the first, second, and third light emitting elements and the light absorption sensor, and the light absorption sensor includes an n-type semiconductor layer between the light absorbing layer and the first common auxiliary layer and including an n-type semiconductor.

Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.