Abstract: In a signal processing apparatus, a photoelectric conversion member includes a first photoelectric conversion layer configured to photoelectrically convert at least one of blue light or red light, and a second photoelectric conversion layer on an incident light surface of the first photoelectric conversion layer and configured to photoelectrically convert green light. An interpolation circuit is configured to interpolate at least one of a blue light signal or a red light signal obtained by photoelectric conversion in the first photoelectric conversion layer L1, using a green light signal obtained by photoelectric conversion in the second photoelectric conversion layer L2. An absorption correction circuit is configured to perform absorption correction on the green light signal, using at least one of the blue light signal or the red light signal that are interpolated by the interpolation circuit.

Abstract: An electronic device may include an edge touch screen including a main display region and an edge display region extending from the main display region each including one or more of red pixels, near infrared ray pixels, and sensor pixels for detecting light with different wavelengths; and a controller configured to, drive the edge touch screen in response to a touch input for the edge display region being maintained for a set time by instructing at least one selected red pixel of the red pixels and at least one selected near infrared ray pixel of the near infrared ray pixels corresponding to a position of the touch input to emit light, and measure biometrics based on light amounts of light of different wavelengths received from at least one selected sensor pixel of the sensor pixels corresponding to the position of the touch input.

Abstract: An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.

Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Abstract: An electronic device is provided.

Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

Abstract: An image sensor includes first and second organic photoelectric conversion devices stacked in a vertical direction and configured to selectively absorb light in a part of visible wavelength spectrum and non-selectively absorb light in the visible wavelength spectrum, respectively. The first organic photoelectric conversion device may selectively absorb light in a blue wavelength spectrum, and the second organic photoelectric conversion device may selectively absorb light in a green wavelength spectrum. The image sensor may have stacked organic photoelectric conversion devices configured to selectively absorb light in a red wavelength spectrum and a green wavelength spectrum, respectively.

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: An imaging device includes a photoelectric conversion device including a sequential stack of an anode, a hole transport buffer layer, a photoelectric conversion layer, an electron transport buffer layer, and a cathode. The photoelectric conversion layer includes a p-type organic semiconductor and an n-type organic semiconductor. The electron transport buffer layer includes a compound represented by General Formula (1), and the p-type organic semiconductor includes a compound represented by General Formula (2): In General Formulas (1) and (2), Ar, R1 to R4, Ar3, R1 to R3, Ar1 and Ar2, and G1 and G2 are as defined in the specification.

Abstract: Disclosed are a photoelectric conversion device and an organic sensor and an electronic device including the same. The photoelectric conversion device includes a first and a second electrode, a photoelectric conversion layer between the first and the second electrode and configured to absorb light in at least one portion of a wavelength spectrum and to convert the absorbed light into an electric signal, and a buffer layer between the second electrode and the photoelectric conversion layer and including a mixture of at least two materials. The mixture includes a first and a second material. The first material has an energy bandgap of at least about 3.2 eV and a HOMO energy level of at least about 6.0 eV. The second material has an energy bandgap of less than or equal to about 2.8 eV and a HOMO energy level of at least about 6.0 eV.

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Abstract: An electronic device according to various exemplary embodiments may include a housing; a first antenna module configured to be disposed in a first end portion in the housing and to include a first antenna and a first amplifier circuitry to output a signal corresponding to the first antenna, a second antenna module configured to be disposed in a second end portion in the housing and to include a second antenna and a second amplifier circuitry to output a signal corresponding to the second antenna, and a transceiver configured to include a first port connected to the first antenna through the first amplifier circuitry and a second port connected to the second antenna through the second amplifier circuitry.