Patents by Inventor Joon Heo

Joon Heo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10457694
    Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: October 29, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Seon-Jeong Lim, Takkyun Ro, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Kyung Bae Park, Sung Young Yun, Gae Hwang Lee, Chul Joon Heo
  • Publication number: 20190302937
    Abstract: An electronic device may include an edge touch screen including a main display region and an edge display region extending from the main display region each including one or more of red pixels, near infrared ray pixels, and sensor pixels for detecting light with different wavelengths; and a controller configured to, drive the edge touch screen in response to a touch input for the edge display region being maintained for a set time by instructing at least one selected red pixel of the red pixels and at least one selected near infrared ray pixel of the near infrared ray pixels corresponding to a position of the touch input to emit light, and measure biometrics based on light amounts of light of different wavelengths received from at least one selected sensor pixel of the sensor pixels corresponding to the position of the touch input.
    Type: Application
    Filed: August 6, 2018
    Publication date: October 3, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul Joon Heo, Kyung Bae Park, Yong Wan Jin
  • Publication number: 20190247356
    Abstract: The present disclosure provides a compound represented by Formula (I) and a pharmaceutically acceptable salt which are effective as a dopamine reuptake inhibitor and a method of using the compound: wherein X is independently halo, alkyl, alkoxy or nitro; m is 0, 1, 2, 3 or 4; n is 1 or 2; R1 and R2 are independently H— or alkyl; R3 is H—, alkyl or aralkyl; and R4 is H— or aryl.
    Type: Application
    Filed: April 26, 2019
    Publication date: August 15, 2019
    Inventors: Young-Soon KANG, Jin-Yong CHUNG, Cheol-Young MAENG, Han-Ju YI, Ki-Ho LEE, Joon HEO, Eun-Hee CHAE, Yu-Jin SHIN
  • Publication number: 20190239821
    Abstract: A pulse oximeter may include a photoelectric conversion device having wavelength selectivity so that a low output LED may be included in the pulse oximeter to prevent skin damage and to reduce power consumption. The pulse oximeter includes a light emitting device configured to emit white light and a sensor configured to detect transmitted light that is received from the light emitting device. The sensor includes a near infrared organic photoelectric conversion device configured to sense a particular near infrared wavelength spectrum of light and a red photoelectric conversion device configured to sense a particular red wavelength spectrum of light.
    Type: Application
    Filed: January 24, 2019
    Publication date: August 8, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Chul Joon HEO, Kyung Bae Park, Dongseon Lee, Moon Gyu Han, Takkyun Ro, Youn Hee Lim, Yong Wan Jin, Kiyohiko Tsutsumi
  • Publication number: 20190214591
    Abstract: A photoelectric device includes a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode and configured to convert light in a particular wavelength spectrum of light of a visible wavelength spectrum of light into an electric signal. The photoelectric conversion layer may include a p-type semiconductor configured to selectively absorb light in a first wavelength spectrum and an n-type semiconductor having a peak absorption wavelength in a second wavelength spectrum of greater than or equal to about 750 nm, an image sensor. The photoelectric conversion layer may include a first semiconductor of an absorption spectrum of a first peak absorption wavelength, and a second semiconductor of an absorption spectrum of a second peak absorption wavelength that is longer than the first peak absorption wavelength by at least about 100 nm.
    Type: Application
    Filed: November 2, 2018
    Publication date: July 11, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Chul Joon Heo, Moon Gyu Han, Yong Wan Jin
  • Patent number: 10314808
    Abstract: The present disclosure provides a compound represented by Formula (I) and a pharmaceutically acceptable salt which are effective as a dopamine reuptake inhibitor and a method of using the compound: wherein X is independently halo, alkyl, alkoxy or nitro; m is 0, 1, 2, 3 or 4; n is 1 or 2; R1 and R2 are independently H— or alkyl; R3 is H—, alkyl or aralkyl; and R4 is H— or aryl.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: June 11, 2019
    Assignee: SK BIOPHARMACEUTICALS CO., LTD.
    Inventors: Young-Soon Kang, Jin-Yong Chung, Cheol-Young Maeng, Han-Ju Yi, Ki-Ho Lee, Joon Heo, Eun-Hee Chae, Yu-Jin Shin
  • Publication number: 20190172872
    Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer disposed between the first electrode and the second electrode and selectively absorbing light in a green wavelength region, wherein the photoelectric conversion layer includes a first and second photoelectric conversion materials, a light-absorption full width at half maximum (FWHM) in a green wavelength region of the first photoelectric conversion material is narrower than the light-absorption FWHM in a green wavelength region of the second photoelectric conversion material, and the first and second photoelectric conversion materials satisfy Relationship Equation 1, and an image sensor and an electronic device including the same. Tm2(° C.)?Ts2(° C.)?Tm1(° C.)?Ts1(° C.
    Type: Application
    Filed: September 20, 2018
    Publication date: June 6, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kiyohiko TSUTSUMI, Kyung Bae Park, Takkyun Ro, Chul Joon Heo, Yong Wan Jin
  • Publication number: 20190173032
    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.
    Type: Application
    Filed: November 2, 2018
    Publication date: June 6, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Takkyun RO, Kiyohiko TSUTSUMI, Chul Joon HEO, Yong Wan JIN
  • Publication number: 20190157594
    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 23, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Takkyun RO, Kyung Bae Park, Ryuichi Satoh, Yong Wan Jin, Chul Joon Heo
  • Patent number: 10290812
    Abstract: A compound for an organic photoelectric device is represented by Chemical Formula 1, and an organic photoelectric device, an image sensor and an electronic device include the same.
    Type: Grant
    Filed: November 25, 2015
    Date of Patent: May 14, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seon-Jeong Lim, Takkyun Ro, Tadao Yagi, Kyung Bae Park, Sung Young Yun, Yong Wan Jin, Chul-Joon Heo
  • Patent number: 10292317
    Abstract: An electronic device is provided that includes a PCB including a first surface, a second surface, and a side surface; an electronic component arranged on the first surface, adjacent to a portion of the side surface; a shield structure including a cap that covers the electronic component and a sidewall extending from a periphery of the cap toward the first surface of the PCB, wherein the sidewall extends in a first direction that is non-parallel to the first surface of the PCB; a first conductive structure that is formed on a portion of the side surface of the PCB; and a second conductive structure that is formed on a portion of the first surface to be connected to the first conductive structure. The sidewall contacts with the first surface of the PCB and overlaps with the second conductive structure, when viewed from above the first surface of the PCB.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: May 14, 2019
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Jung-Sik Park, Seung-Ki Choi, Joon Heo, Hyun-Ju Hong
  • Publication number: 20190123786
    Abstract: An electronic device according to various exemplary embodiments may include a housing; a first antenna module configured to be disposed in a first end portion in the housing and to include a first antenna and a first amplifier circuitry to output a signal corresponding to the first antenna, a second antenna module configured to be disposed in a second end portion in the housing and to include a second antenna and a second amplifier circuitry to output a signal corresponding to the second antenna, and a transceiver configured to include a first port connected to the first antenna through the first amplifier circuitry and a second port connected to the second antenna through the second amplifier circuitry.
    Type: Application
    Filed: October 24, 2018
    Publication date: April 25, 2019
    Inventors: Hyang-Bok LEE, Man-Seob KIM, Tae-Lee LEE, Yong-Jun PARK, Sung-Cheol YOO, Hoon-Sang YOO, Jung-Min PARK, Byoung-Ryoul SONG, Joon HEO, Jung-Hoon PARK, Dong-Il SON
  • Patent number: 10256414
    Abstract: Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.
    Type: Grant
    Filed: October 23, 2014
    Date of Patent: April 9, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seon-Jeong Lim, Kyung Bae Park, Dong-Seok Leem, Moon Gyu Han, Kyu Sik Kim, Takkyun Ro, Kwang Hee Lee, Yong Wan Jin, Chul Joon Heo
  • Patent number: 10236461
    Abstract: An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: March 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Takkyun Ro, Kyung Bae Park, Ryuichi Satoh, Yong Wan Jin, Chul Joon Heo
  • Publication number: 20190058143
    Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae PARK, Gae Hwang LEE, Takkyun RO, Yong Wan JIN, Chul Joon HEO
  • Publication number: 20190051833
    Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as described in the detailed description.
    Type: Application
    Filed: August 10, 2018
    Publication date: February 14, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Norihito Ishii, Katsunori Shibata, Takkyun Ro, Ohkyu Kwon, Sang Mo Kim, Kyung Bae Park, Sung Young Yun, Dong-Seok Leem, Youn Hee Lim, Yong Wan Jin, Yeong Suk Choi, Jong Won Choi, Taejin Choi, Hyesung Choi, Chul Joon Heo
  • Patent number: 10141376
    Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: November 27, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Bae Park, Satoh Ryuichi, Gae Hwang Lee, Kwang Hee Lee, Dong-Seok Leem, Yong Wan Jin, Tadao Yagi, Chul Joon Heo
  • Publication number: 20180315933
    Abstract: A compound for an infrared light sensing device may be represented by a particular chemical formula and may be included in an infrared light sensing device. An image sensor may include the infrared light sensing device, and an electronic device may include the image sensor.
    Type: Application
    Filed: April 25, 2018
    Publication date: November 1, 2018
    Applicants: Samsung Electronics Co., Ltd., IMPERIAL INNOVATIONS LIMITED
    Inventors: Moon Gyu HAN, Kyung Bae Park, Yong Wan Jin, Chul Joon Heo, Brett Baatz, Martin Heeney, Minwon Suh, Yang Han, Ji-Seon Kim
  • Patent number: 10115919
    Abstract: An optoelectronic diode may include a first electrode, a second electrode, a third electrode, a first active layer between the first and second electrodes, and a second active layer between the second and third electrodes. Two of the electrodes may be electrically connected to each other and may have different resistances. The first and second active layers may be isolated from each other. The first active layer, the first electrode, and the second electrode may form a diode, and the second active layer, the second electrode, and the third electrode may form a diode. The second electrode may have a refractive index different from a refractive index of the second active layer.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: October 30, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Bae Park, Gae Hwang Lee, Takkyun Ro, Yong Wan Jin, Chul Joon Heo
  • Publication number: 20180282303
    Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.
    Type: Application
    Filed: March 23, 2018
    Publication date: October 4, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Moon Gyu Han, Kyung Bae Park, Dongseon Lee, Yong Wan Jin, Chul Joon Heo