Abstract: An organic light-emitting display apparatus and a method of manufacturing the same are disclosed.

Abstract: An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.

Abstract: An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a pixel electrode between the rear electrode and the opposite electrode. Here, an insulating layer is interposed between the pixel electrode and the rear electrode, wherein the pixel electrode, the insulating layer, and the rear electrode are configured as a capacitor of the organic light-emitting display. In such a structure, as the capacitor is disposed in a light-emitting area where the pixel electrode exists, it is not necessary to provide an additional space for a capacitor, thus improving an aperture ratio of the display.

Abstract: In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.

Abstract: An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.

Abstract: In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.

Abstract: An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.

Abstract: An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.

Abstract: In an organic light-emitting display having superior image quality and device reliability, and a related method of manufacturing the organic light-emitting display, the organic light-emitting display comprises: a gate electrode formed on a substrate; an interlayer insulating film formed on the substrate so as to cover the gate electrode; and a transparent electrode formed on the interlayer insulating film. The interlayer insulating film comprises multiple layers having different refractive indices.

Abstract: An organic light emitting diode (OLED) display includes: a first substrate including a display area and a non-display area; a driving element on the display area of the first substrate, and including a driving thin film transistor, a switching thin film transistor, and a capacitor; a circuit unit on the non-display area of the first substrate; an organic light emitting element on the driving element, and including a pixel electrode, an organic emission layer, and a common electrode; an inorganic protective layer covering the circuit unit and the common electrode of the organic light emitting diode; a sealing member on the inorganic protective layer in the non-display area of the first substrate; and a second substrate on the sealing member.

Abstract: In a display device and a method of manufacturing the display device, the display device has a substrate having a first region and a second region disposed at a peripheral portion of the first region. The substrate includes a plurality of first electrodes disposed on the first region and an insulation member selectively disposed in the first region. The insulating member has a plurality of openings that expose a portion corresponding to the first electrodes. The substrate includes light emitting patterns are disposed on the first electrodes through the openings and the substrate has a second electrode disposed on the light emitting patterns. Accordingly, the thickness of the light emitting patterns is uniformity so that the quality of an image generated from the light emitting patterns is improved.

Abstract: An organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including an active layer, a gate electrode including a gate lower electrode and a gate upper electrode, a source electrode, and a drain electrode, an organic light emitting device electrically connected to the thin film transistor, wherein a pixel electrode formed of the same material as at least a part of the gate electrode in the same layer, an intermediate layer including a light emitting layer, and an opposed electrode arranged to face the pixel electrode are sequentially deposited.

Abstract: An organic light-emitting display apparatus that includes a thin film transistor comprising an active layer, a gate electrode, and source and drain electrodes electrically connected to the active layer; a pixel electrode formed on the same layer as the gate electrode; a light-emitting layer formed on the pixel electrode; a passivation layer formed on upper surfaces of the source and drain electrodes and upper surfaces of wirings formed on the same layer as the source and drain electrodes; an organic insulating layer that covers the thin film transistor, comprises an opening that exposes an upper surface of the pixel electrode, and directly contacts the passivation layer; and a facing electrode that is formed on the light-emitting layer, and is formed to directly contact the organic insulating layer to face the pixel electrode.

Abstract: An organic light-emitting display device is manufactured via a simple process and has an improved aperture ratio. The organic light-emitting display device comprising: a substrate; an auxiliary electrode formed on the substrate; a thin film transistor (TFT) formed on the auxiliary electrode, the TFT comprising an active layer, a gate electrode, a source electrode and a drain electrode; an organic electroluminescent (EL) device electrically connected to the TFT and formed by sequentially stacking a pixel electrode formed on the same layer by using the same material as portions of the source and drain electrodes, an intermediate layer comprising an organic light emission layer (EML), and an opposite electrode disposed to face the pixel electrode; and a contact electrode formed on the same layer by a predetermined distance by using the same material as the source and drain electrodes, and electrically connecting the auxiliary electrode and the opposite electrode.

Abstract: An organic light emitting device according to one or more embodiments includes a gate line, a data line intersecting the gate line, a switching thin film transistor connected to the gate line and the data line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (LED) connected to the driving thin film transistor. The switching thin film transistor includes a control electrode connected to the gate line, a crystalline semiconductor overlapping the control electrode, and an input electrode and an output electrode are spaced apart from each other on the crystalline semiconductor, wherein the control electrode and the gate line are respectively disposed under and on the crystalline semiconductor and include different materials.

Abstract: An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.

Abstract: An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.

Abstract: A thin film transistor (TFT) and a flat panel display device including the same. The TFT includes a substrate, a gate electrode formed over the substrate, the gate electrode formed with silicon doped with impurities, a gate wiring connected to the gate electrode, an active layer formed over the gate electrode, and source and drain electrodes connected to the active layer. According to such a structure, since heat flow to the gate electrode during crystallization of the active layer may be prevented, stable crystallization of the active layer may be performed, and thus an error rate of a product may be decreased.

Abstract: In an organic light emitting display device and a method of manufacturing the same, the organic light emitting display device comprises: an active layer of a thin film transistor, which is formed on a substrate; a gate electrode formed on the active layer and a first insulating layer, and including a first transparent conductive layer and a first metal layer; source and drain electrodes formed on the gate electrode and a second insulating layer, and including a second metal layer connected to the active layer through a contact hole formed in the second insulating layer, a third metal layer formed on the second metal layer, and a second transparent conductive layer formed on the third metal layer; a pixel electrode formed on the first insulating layer, and including the first transparent conductive layer, the third metal layer, and the second transparent conductive layer; an intermediate layer disposed on the pixel electrode, and including an organic emission layer; and a counter electrode disposed so as to fa

Abstract: An organic light-emitting display device and a method of manufacturing the organic light-emitting display device. A metal layer separated from a pixel electrode is formed without increasing the number of masks, thereby simplifying the pixel electrode and obtaining etching characteristics of a gate electrode.