Abstract: A non-volatile memory device is employed in which data values are determined by the polarities at both ends of a cell, The non-volatile memory device includes a first decoder which decodes a plurality of predetermined bit values of a row address into a first address and is disposed in a row direction of a memory cell array; a second decoder which decodes the other bit values of the row address into a second address and is disposed in a column direction of the memory cell array; and a driver which applies bias voltages to a word line which corresponds to the first address or the second address in accordance with the data values. By including first and second decoders and decoding a row address in two steps, a bi-directional RRAM according to the present invention can perform addressing at high speeds while reducing chip size.

Abstract: A non-volatile memory device, in which data values are determined by polarities at cell terminals, includes a memory cell array. The memory cell array is divided into multiple sub cell arrays, each sub cell array including at least one input/output line and an X-decoder/driver. First input/output lines included in different sub cell arrays may be simultaneously activated and bias voltages may be applied to the activated first input/output lines in accordance with the data values. The non-volatile memory device may be a bi-directional resistive random access memory (RRAM).

Abstract: An integrated circuit memory device includes an array of nonvolatile memory cells (e.g., variable resistance cells) having a first plurality of lines electrically coupled to memory cells therein. A read/write control circuit is provided. The read/write control circuit includes a read/write merge circuit and a column selection circuit. The read/write control circuit, which is configured to drive a selected one of the first plurality of lines with unequal write and read voltages during respective write and read operations, includes a compensating unit. This compensating unit is configured to provide a read compensation current to the selected one of the first plurality of lines circuit during the read operation.

Abstract: A non-volatile memory device includes a memory cell array including a memory cell array having word lines, bit lines, and non-volatile memory cells, each non-volatile memory cell having a variable resistive material and an access element connected between the corresponding word line and the corresponding bit line. The variable resistive material has a resistance level that varies according to data to be stored. A selection circuit selects at least one non-volatile memory cell in which data will be written. An adaptive write circuit/method supplies a write bias to the selected non-volatile memory cell through the bit line connected to the selected non-volatile memory cell to write data in the selected non-volatile memory cell and varies (e.g., increases) the write bias until the resistance level of the selected non-volatile memory cell varies.

Abstract: A semiconductor memory device and a layout structure of word line contacts, in which the semiconductor memory device includes an active region, a plurality of memory cells, and word line contacts. The active region is disposed in a first direction as a length direction on a semiconductor substrate and is used as a word line. The plurality of memory cells are disposed in the first direction on the active region and are each constructed of one variable resistance device and one diode device. In the word line contacts, at least one each is disposed between respective units, wherein each unit is constructed of predetermined numbers of memory cells on the active region. A bridge effect, such as a short-circuit between adjacent word lines, can be prevented or substantially reduced.

Abstract: A PRAM and programming method are disclosed. The PRAM includes a memory cell array including a test cell, a write driver applying a program pulse and providing a program current to the memory cell array, a sense amplification and verification circuit reading data programmed in the memory cell array and performing a program verify operation on the data, and a program loop control unit storing program verification result for the test cell at each program loop during test operation and generating the program pulse according to the program verification result to control the start of the program loop during normal operation.

Abstract: Disclosed herein is a method for manufacturing a high-crush-strength iridium catalyst for hydrazine decomposition for spacecraft and satellite propulsion using bauxite, the method including: an acid treatment step of bringing bauxite into contact with a 0.1-10 M acid solution for 10-14 hr; a filtration step of filtering the acid-treated bauxite as a solid to remove the remaining acid and impurities; a thermal treatment step of bringing the filtered bauxite into contact with hot air at a temperature of 500-700° C. for 2-6 hr; a catalyst loading step of loading an iridium catalyst onto the thermally treated bauxite; and a reduction step of reducing the catalyst of the catalyst-loaded bauxite.

Abstract: A semiconductor memory device, which has an array of memory cells connected with a plurality of bit line pairs and a plurality of word lines, to perform a read or write operation of data, having low power consumption is provided. The device includes a first power supply for supplying a first power source voltage. Also, a second power supply supplies a second power source voltage having a lower voltage level than the first power source voltage. Further, the device includes a standard ground. An elevated ground circuit provides an elevated ground voltage having a higher voltage level than that of the standard ground. A first power circuit is connected with the first power supply and the standard ground, and operates in response to the first power source voltage. A second power circuit is connected with the second power supply and the elevated ground circuit, and operates in response to the second power source voltage. Thereby, power and chip size can be reduced.

Abstract: The vehicle canister comprising: the first chamber filled with the active carbon and funneled with the tank port, where the evaporating gas is infused through and the second chamber filled with the active carbon and funneled with the atmosphere port and neighboring the first chamber via the isolation wall. Also, it involves the vehicle canister installed in the canister housing which has the absorption and desorption improver to improve the absorption and desorption efficiency with heat conduction with temperature change of the active carbon occurred during the absorption and desorption of evaporation gas infused into the canister housing. The absorption and desorption improver is composed with the first and the second absorption and desorption improver.

Abstract: A semiconductor memory device, which has an array of memory cells connected with a plurality of bit line pairs and a plurality of word lines, to perform a read or write operation of data, having low power consumption is provided. The device includes a first power supply for supplying a first power source voltage. Also, a second power supply supplies a second power source voltage having a lower voltage level than the first power source voltage. Further, the device includes a standard ground. An elevated ground circuit provides an elevated ground voltage having a higher voltage level than that of the standard ground. A first power circuit is connected with the first power supply and the standard ground, and operates in response to the first power source voltage. A second power circuit is connected with the second power supply and the elevated ground circuit, and operates in response to the second power source voltage. Thereby, power and chip size can be reduced.

Abstract: One object of the present invention is to provide a blade for forming ribs that is able to improve wear resistance; in order to achieve the object, the present invention provide a blade for forming ribs that forms ribs either on the surface of a substrate or via an undercoating layer on the surface of a substrate by moving a blade body in a fixed direction relative to a paste film in the state in which comb teeth formed on at least a portion of the periphery of said blade body are penetrated into said paste film formed on the surface of said substrate to plasticly deform said paste film; wherein, the surface of said comb teeth formed on said blade body that makes contact with said paste film is coated with a compound layer in which hard particles are dispersed in a metal.

Abstract: One object of the present invention is to provide a blade for forming ribs that is able to improve wear resistance; in order to achieve the object, the present invention provide a blade for forming ribs that forms ribs either on the surface of a substrate or via an undercoating layer on the surface of a substrate by moving a blade body in a fixed direction relative to a paste film in the state in which comb teeth formed on at least a portion of the periphery of said blade body are penetrated into said paste film formed on the surface of said substrate to plasticly deform said paste film; wherein, the surface of said comb teeth formed on said blade body that makes contact with said paste film is coated with a compound layer in which hard particles are dispersed in a metal.

Abstract: An apparatus for and a method of melting fine particles containing carbon, capable of uniformly burning and melting the fine particles throughout the entire zone of the combustion flame. The apparatus includes a triple tube structure including an inner oxygen feeding section having an oxygen inlet tube provided with an oxygen feeding passage, a particle feeding section arranged surrounding the inner oxygen feeding section, comprising a particle inlet tube, a feeding tube and a feeding passage, and an outer oxygen feeding section arranged surrounding the particle feeding section, comprising an outer oxygen inlet tube, a feeding tube and a feeding passage. The front ends of the inner oxygen feeding tube, particle feeding tube and outer oxygen feeding tube constitute a nozzle which serves to inject the fine particles fed through the particle feeding tube together with air and/or oxygen flows respectively fed through the inner and outer oxygen feeding tubes to be burned and melted.

Abstract: A method for agglomerating iron ore particles pre-reduced to produce hot pig iron, wherein hot iron ore particles pre-reduced in the pre-reduction furnace are simply mixed with aluminum powder or aluminum-containing metal powder before being loaded in the smelting reduction furnace so that they will be agglomerated, thereby being capable of not only simplifying the agglomeration, but also eliminating the adverse effect on the quality of ingot iron caused by impurities such as S or P. Aluminum dross, which is a waste, may be used as the aluminum-containing metal powder for agglomerating the iron ore particles. In this case, a reduced energy consumption and disposal of wastes can be achieved.