Abstract: Disclosed herein is a die package including an encapsulated die, including: a die including pads on one side thereof; an encapsulation layer covering lateral sides of the die; a support layer covering the encapsulation layer and one side of the die; a passivation layer formed on the other side of the die such that the pads are exposed therethrough; and a redistribution layer formed on the passivation layer such that one part thereof is connected with the pad. Here, since one side of the die is supported by the support layer and the encapsulation layer is formed on only the lateral side of the die, the warpage of the die package due to the difference in thermal expansion coefficient can be minimized.

Abstract: A method of manufacturing a semiconductor package, the method including: forming an insulating layer on a board; forming an electrode pattern portion by redistribution plating in order to make a circuit connection on the insulating layer; manufacturing a semiconductor chip by forming a protecting portion on the electrode pattern portion such that a portion of the electrode pattern portion is exposed; and mounting the semiconductor chip on a receiving space of a circuit board and electrically connecting the semiconductor chip to the circuit board.

Abstract: Disclosed herein are a wafer level package for heat dissipation and a method of manufacturing the same. The wafer level package includes a heat dissipation plate including a cavity and a hole, a die including a pad disposed in the cavity of the heat dissipation plate in a face-up manner, a thermal conductive adhesive disposed between the die and an inner wall of the cavity and disposed in the hole, and a redistribution layer connected at one end to the pad and at the other end extended. The wafer level package protects the die from external environments and enables the die to be easily flush with the heat dissipation plate.

Abstract: A method of manufacturing a wafer level package including: separating chips by dicing a wafer; forming a removable resin layer in a space between the separated chips and at upper parts thereof; separating the chips by dicing the removable resin layer; mounting the chips separated in a state of being surrounded by the removable resin layer, on a carrier plate; forming a molding material on the carrier plate to cover the removable resin layer; separating the carrier plate from the chips; forming a dielectric layer having redistribution lines connected to the chips, on the chips exposed by separating the carrier plate; and forming a solder resist layer on the dielectric layer to expose portions of the redistribution lines.

Abstract: A method of manufacturing an electronic component embedded printed circuit board including: mounting an electronic component on an insulating layer in a fluidal condition so that a part of the electronic component is inserted into the insulating layer and another part of the electronic component is protruded out of a top surface of the insulating layer by pressing the electronic component onto the insulating layer; fixing the electronic component by curing the insulating layer; forming a metallic seed layer on a top surface of the insulating layer including an exposed surface of the electronic component; forming a plating layer on the metallic seed layer; forming via-holes at positions on the insulating layer, which correspond to pads of the electronic component and forming circuit patterns electrically conducted with the pads; and forming a solder resist layer including the via-holes electrically connected to the circuit patterns.

Abstract: A wafer level package includes a chip, a removable resin layer, a molding material, a dielectric layer, redistribution lines and a solder resist. The removable resin layer is formed to surround side surfaces and a lower surface of the chip. The molding material is formed on the lower surface of the removable resin layer. The dielectric layer is formed over the removable resin layer including the chip and having via holes to expose portions of the chip. The redistribution lines are formed on the dielectric layer including insides of the via holes to be connected to the chip. The solder resist layer is formed on the dielectric layer to expose portions of the redistribution lines.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package are disclosed. A semiconductor package in accordance with an embodiment of the present invention includes a substrate, which is formed with a ground circuit and mounted with a semiconductor chip on one surface, a conductive ground layer, which is formed on the other surface of the substrate and connected with the ground circuit, a molding, which seals up the ground layer and the substrate having the semiconductor chip mounted thereon, and a conductive shield, which covers the molding and is connected with the ground layer. With a semiconductor package in accordance with an embodiment of the present invention, grounding for shielding is possible even in an entirely molded structure, and a double shielding structure to improve the shielding property.

Abstract: Disclosed herein are a die package and a method of manufacturing the die package. A solder layer is formed on a lower surface of a die. The die is self-aligned and attached to a support plate using surface tension between the solder layer and a metal layer of the support plate, thus reducing attachment lead time of the die.

Abstract: There is provided a semiconductor package including: a circuit board having a receiving space formed therein; a semiconductor chip inserted into the receiving space of the circuit board; and an electrode pattern portion having a pattern shape on one surface of the semiconductor chip, and directly contacting a via portion of the circuit board so as to be electrically connected thereto.

Abstract: Disclosed is a method of manufacturing a wafer level package, which includes arranging semiconductor dies on a carrier, forming a protective layer between the semiconductor dies of the carrier through screen printing, primarily heat hardening the protective layer, simultaneously pressing and secondarily heat hardening the protective layer, and removing the carrier, so that a thickness difference between the semiconductor dies and the protective layer is not formed and the warping of the wafer level package is reduced.

Abstract: Disclosed herein are a die package and a method of manufacturing the die package. A solder layer is formed on a lower surface of a die. The die is self-aligned and attached to a support plate using surface tension between the solder layer and a metal layer of the support plate, thus reducing attachment lead time of the die.

Abstract: Disclosed herein is a die package including an encapsulated die, including: a die including pads on one side thereof; an encapsulation layer covering lateral sides of the die; a support layer covering the encapsulation layer and one side of the die; a passivation layer formed on the other side of the die such that the pads are exposed therethrough; and a redistribution layer formed on the passivation layer such that one part thereof is connected with the pad. Here, since one side of the die is supported by the support layer and the encapsulation layer is formed on only the lateral side of the die, the warpage of the die package due to the difference in thermal expansion coefficient can be minimized.

Abstract: Disclosed herein are a wafer level package for heat dissipation and a method of manufacturing the same. The wafer level package includes a heat dissipation plate including a cavity and a hole, a die including a pad disposed in the cavity of the heat dissipation plate in a face-up manner, a thermal conductive adhesive disposed between the die and an inner wall of the cavity and disposed in the hole, and a redistribution layer connected at one end to the pad and at the other end extended. The wafer level package protects the die from external environments and enables the die to be easily flush with the heat dissipation plate.

Abstract: The present invention relates to a chip embedded printed circuit board and a manufacturing method thereof and provides a chip embedded printed circuit board including: an insulating layer having vias formed therethrough; a first chip and a second chip embedded in the insulating layer and having pads, which are respectively exposed to upper and lower surfaces of the insulating layer, on one surfaces thereof; an upper pattern formed on the upper surface of the insulating layer to be connected to the pads of the first chip and the vias; and a lower pattern formed on the lower surface of the insulating layer to be connected to the pads of the second chip and the vias. Also, the present invention provides a manufacturing method of a chip embedded printed circuit board.

Abstract: The present invention relates to a chip embedded printed circuit board and a manufacturing method thereof. The prevent invention provides the chip embedded printed circuit board including an insulating layer embedding a chip provided with posts at an upper part, vias formed through the insulating layer, upper patterns formed at the upper part of the insulating layer to be connected to the posts and the vias and lower patterns formed at a lower part of the insulating layer to be connected to the vias, and the manufacturing method thereof.

Abstract: The present invention relates to a wafer level package and a method of manufacturing the same and a method of reusing a chip and provides a wafer level package including a chip; a removable resin layer formed to surround side surfaces and a lower surface of the chip; a molding material formed on the lower surface of the removable resin layer; a dielectric layer formed over the removable resin layer including the chip and having via holes to expose portions of the chip; redistribution lines formed on the dielectric layer including insides of the via holes to be connected to the chip; and a solder resist layer formed on the dielectric layer to expose portions of the redistribution lines. Also, the present invention provides a method of manufacturing a wafer level package and a method of reusing a chip.

Abstract: A method of manufacturing a wafer level package is disclosed, which may include: coating an insulation layer over one side of a semiconductor chip, on one side of which an electrode pad is formed, such that the electrode pad is open; forming a seed layer by depositing a conductive metal onto one side of the semiconductor chip; forming a rewiring pattern that is electrically connected with the electrode pad, by selective electroplating with the seed layer as an electrode; forming a conductive pillar that is electrically connected with the rewiring pattern, by selective electroplating with the seed layer as an electrode; and removing portions of the seed layer open to the exterior. By forming the rewiring pattern and the metal pillar using one seed layer, the manufacturing process can be simplified, whereby defects during the manufacturing process can be reduced and the reliability of the products can be improved.

Abstract: A semiconductor package and a method of manufacturing the semiconductor package are disclosed. The semiconductor package in accordance with an embodiment of the present invention includes: a substrate, in which a conductive pattern formed on one surface of the substrate; an insulation layer, which is formed on one surface of the substrate, in which a through-hole is formed in the insulation layer such that the conductive pattern is exposed; a metal post, which is formed in the through-hole such that one end of the metal post is in contact with the conductive pattern and the other end of the metal post is protruded from the insulation layer; and a solder bump, which is formed on the other end of the metal post.