Abstract: An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.

Abstract: An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.

Abstract: The present invention relates to a process for producing tetrahydrofuran polymer or tetrahydrofuran copolymer by using heteropolyacid catalyst, and more particularly, to a process for producing tetrahydrofuran polymer by using hydronium ion water having a pH of 5.5 or less as a reaction initiator in the initiation step.

Abstract: A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: A metal line having a multi-layered diffusion layer in a resultant semiconductor device is presented along with corresponding methods of forming the same. The metal line includes an insulation layer, a multi-layered diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The multi-layered diffusion barrier is formed on a surface of the metal line forming region defined in the insulation layer. The diffusion barrier includes a VB2 layer, a CrV layer and a Cr layer. The metal layer is formed on the diffusion barrier which substantially fills in the metal line forming region of the insulation layer to eventually form the metal line.

Abstract: A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz lo layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: A probe card for use in the test of the semiconductor devices, a needle of the probe card, and a method of manufacturing the needle are disclosed. This invention is to strengthen the beam portion of the needle, to reduce the contact area between a probing portion and a pad of a wafer die, and to prevent the test apparatus from malfunctioning. The needle of a probe card includes: a probing portion for contacting a pad of a wafer die at a certain pin pressure; a soldered portion soldered to a circuit board of the probe card, for transmitting an electrical signal to the probing portion; and a beam portion integrally connecting the probing portion and the soldered portion and having elasticity to exhibit a certain pin pressure by which the probing portion 210 can elastically contact the pad of a wafer die. Here, the beam portion has undergone a plating process. The needle of a probe card can precisely contact the pad.

Abstract: A metal line having a multi-layered diffusion layer in a resultant semiconductor device is presented along with corresponding methods of forming the same. The metal line includes an insulation layer, a multi-layered diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The multi-layered diffusion barrier is formed on a surface of the metal line forming region defined in the insulation layer. The diffusion barrier includes a VB2 layer, a CrV layer and a Cr layer. The metal layer is formed on the diffusion barrier which substantially fills in the metal line forming region of the insulation layer to eventually form the metal line.

Abstract: A metal line having a MoxSiy/Mo diffusion barrier of a semiconductor device and corresponding methods of fabricating the same are presented. The metal line includes an insulation layer, a diffusion barrier, and a metal layer. The insulation layer is formed on a semiconductor substrate and has a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a stack structure composed of a MoxSiy layer and a Mo layer. The metal layer is formed on the diffusion barrier which fills in the metal line forming region of the insulation layer.

Abstract: An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.

Abstract: An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an MoxOy layer and an Mo layer. The metal line is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: An anti-reflective coating composition includes a solvent and about 20 to about 35 percent by weight of a polymer prepared by a condensation reaction of an acrylate polymer including a hydroxyl group with a derivative of muramic acid and a derivative of mandelic acid.

Abstract: A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

Abstract: The present invention relates to a process for producing tetrahydrofuran polymer or tetrahydrofuran copolymer by using heteropolyacid catalyst, and more particularly, to a process for producing tetrahydrofuran polymer by using hydronium ion water having a pH of 5.5 or less as a reaction initiator in the initiation step.

Abstract: In a composition for forming an interfacial layer on a photoresist pattern, and a method of forming a pattern using the composition, the composition includes a water-soluble polymer, a cross-linking agent and a water-miscible solvent. The water-soluble polymer includes a repeating unit represented by Formula 1, wherein R1, R2, R3, R4 and R5 independently denote a hydrogen atom, a hydroxyl group, an alkyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt, R6 denotes a hydrogen atom or an alkyl group, m denotes an integer of 1 to 4 both inclusive, and x denotes an integer of 1 to 1,000 both inclusive. Also, at least one of R1, R2, R3, R4 and R5 is a hydroxyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt.

Abstract: A coating material for a photoresist pattern includes a water-soluble polymer and an additive mixed with the water-soluble polymer. The additive may be at least one selected from the group represented by Formulas 1 and 2: wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R8 respectively represent one selected from an electron donating group consisting of an alkyl group and —H, and wherein X and Y respectively represent one selected from a heteroatom group consisting of N, O and S, and R1 to R7 respectively represent one selected from an electron donating group consisting of an alkyl group and —H.

Abstract: In a composition for forming an interfacial layer on a photoresist pattern, and a method of forming a pattern using the composition, the composition includes a water-soluble polymer, a cross-linking agent and a water-miscible solvent. The water-soluble polymer includes a repeating unit represented by Formula 1, wherein R1, R2, R3, R4 and R5 independently denote a hydrogen atom, a hydroxyl group, an alkyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt, R6 denotes a hydrogen atom or an alkyl group, m denotes an integer of 1 to 4 both inclusive, and x denotes an integer of 1 to 1,000 both inclusive. Also, at least one of R1, R2, R3, R4 and R5 is a hydroxyl group, a hydroxyalkyl group, an aminoalkyl group, a mercaptoalkyl group, an amino group, a mercapto group or an ammonium salt.

Abstract: An anti-reflective coating composition includes a solvent and about 20 to about 35 percent by weight of a polymer prepared by a condensation reaction of an acrylate polymer including a hydroxyl group with a derivative of muramic acid and a derivative of mandelic acid.