Abstract: A nucleic acid sequencing system may include non-planar substrates coupled to the outer surface of a rotating drum. The substrates may be curved and include a plurality of nucleic acid samples. A detection system, including for example an objective and a camera, may detect sequencing events on the non-planar substrate while the non-planar substrate is rotated relative to the detection system around a longitudinal axis of the drum by the actuation system.

Abstract: A nucleic acid sequencing system may include a substrate coupled to a rotating disk. The substrate may include a plurality of nucleic acid samples. A detection system, including for example an objective and a camera, may detect sequencing events on the substrate while the substrate is rotated relative to the detection system around a rotational axis of the substrate, perpendicular to a surface of the substrate, by the actuation system.

Abstract: A method for sorting cells in a biological sample comprising a first type of cells and a second type of cells may comprise introducing the biological sample into a chamber comprising a first surface and a second surface, wherein the first surface is associated with a transparent electrode and the second surface is associated with a photoconductive portion of an electrode. The method may further comprise moving incident light and the photoconductive portion relative to one another so as to illuminate regions of the photoconductive portion and modulate an electric field in the chamber in proximity to the illuminated regions. The method may further comprise separating the first type of cells from the second type of cells in the chamber via dielectrophoretic movement of the first type of cells and the second type of cells caused by the modulated electric field, wherein a dielectrophoretic characteristic of at least one of the first type of cells and the second type of cells has been modified.

Abstract: A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer above the active pattern, forming a third insulating layer on the substrate, forming first and second contact holes through the second and third insulating layers to expose first and second portions of the active pattern, and forming a third contact hole through the first, second, and third insulating layers exposing a portion of the data line, respectively, and forming source and drain electrodes on the third insulating layer, the source electrode connected to the first exposed portion of the active pattern through the first contact hole and connected to the first exposed portion of the data line through the third contact hole, and the drain electrode connected to the second exposed portion of the active pattern through the second

Abstract: An array substrate for a transflective liquid crystal display device includes: a substrate; a gate line and a data line on the substrate, the gate line and the data line crossing each other to define a pixel region including a transmissive area and a reflective area surrounding the transmissive area; a thin film transistor having a gate insulating layer, the thin film transistor electrically connected to the gate line and the data line; a first passivation layer having a drain contact hole exposing a drain electrode of the thin film transistor and a through hole exposing the substrate in the transmissive area; a pixel electrode on the first passivation layer, the pixel electrode contacting the substrate in the transmissive area through the through hole; and a reflective plate on the pixel electrode, the reflective plate being electrically connected to the drain electrode through the drain contact hole and to the pixel electrode.

Abstract: A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

Abstract: A transflective-type liquid crystal display device includes a plurality of gate and data lines crossing each other on a substrate to define a plurality of pixel regions, a thin film transistor at each crossing of the gate and data lines, the thin film transistor including a semiconductor layer, and source and drain electrodes contacting source and drain regions, respectively, a projection seed pattern within the pixel region along a same layer as the semiconductor layer of the thin film transistor, and a reflective electrode contacting the drain electrode of the thin film transistor and having a reflective projection corresponding to the projection seed pattern.

Abstract: A liquid crystal display device is provided. The liquid crystal display device includes a gate line and a data line formed on a substrate; a thin film transistor formed at an intersection of the gate line and the data line; a pixel electrode connected to the thin film transistor; a common electrode substantially parallel to the pixel electrode; and a conductive pattern in contact with the common electrode at a lateral side surface of the common electrode.

Abstract: An LCD and a method of manufacturing the same using at most six mask processes are provided. An active layer and a storage electrode are simultaneously formed by diffraction exposure. Multiple ion implantations are performed using a photoresist or the gate electrode to mask different areas of an underlying semiconductor. Source and drain electrodes and a pixel electrode are simultaneously formed by diffraction exposure. First and second connection electrodes that lower the contact resistance between the drain electrode and the active layer are formed by a lift-off process.

Abstract: A method of fabricating a liquid crystal display device includes forming first, second, and third active patterns on a substrate having a pixel region and a driving region, wherein the first and second active patterns are in the driving region and the third active pattern is in the pixel region, the first, second, and third active patterns each having an active region, a source region, and a drain region with the source and drain regions on opposing sides of the active region, forming a gate insulator on the first, second, and third active patterns, forming first, second, and third gate electrodes on the gate insulator, wherein the first, second, and third gate electrodes correspond to the active regions of the first, second, and third active patterns, respectively, doping the source and drain regions of the first, second, and third active patterns with n? ions using the first, second, and third gate electrodes as a doping mask, doping the n? doped source and drain regions of the second active pattern with p+

Abstract: A liquid crystal display device including first and second active layers over a substrate, a storage line over the second active layer, a first insulating layer over the storage line, a gate electrode on the first insulating layer and corresponding to the first active layer, a second insulating layer over the gate electrode, source and drain electrodes connected to the first active layer through the first and second insulating layers, a gate line connected to the gate electrode through the second insulating layer, a data line substantially perpendicularly arrange with respect to the gate line to define a pixel region, a pixel electrode connected to the drain electrode through the second insulating layer, and a connection line connected to one of the gate line and the data line through the second insulating layer.

Abstract: A fabrication method of an LCD includes providing a substrate having a first region and a second region; forming a storage line in the first region and an active pattern in the second region of the substrate; forming a first insulation film on the substrate; forming a gate electrode and a pixel electrode on the substrate; forming a second insulation film on the substrate; and forming a source electrode and a drain electrode, the source electrode connected to a source region via a contact hole and the drain electrode connected to a drain region through the contact hole. The fabrication method may obtain a sufficient storage capacitance with a simplified process. The number of masks used for fabrication of a thin film transistor (TFT) may be reduced.

Abstract: Apparatus and Methods are provided for a microfabricated fluorescence activated cell sorter based on an optical switch for rapid, active control of cell routing through a microfluidic channel network. This sorter enables low-stress, highly efficient sorting of populations of small numbers of cells (i.e., 1000-100,000 cells). The invention includes packaging of the microfluidic channel network in a self-contained plastic cartridge that enables microfluidic channel network to macro-scale instrument interconnect, in a sterile, disposable format.

Abstract: A CMOS-TFT array substrate and a method for fabricating the same is disclosed, by a low-mask technology to decrease the usage count of masks, which includes a substrate comprising an active area having a plurality of pixel regions and a driving circuit area for driving the active area, each pixel region having a transmitting part and a reflective part; a first semiconductor layer having first source/drain regions formed in the pixel region; a second semiconductor layer having second source/drain regions formed in the driving circuit area; a gate insulating layer on an entire surface of the substrate including the first and second semiconductor layers; first and second gate electrodes on the gate insulating layer above the first and second semiconductor layers; a storage electrode in the pixel region; an insulating interlayer on the entire surface of the substrate; a transmitting electrode on the insulating interlayer of the transmitting part; a passivation layer on the entire surface of the substrate includin

Abstract: An LCD device and a fabrication method having a reduced number of masks and simplified fabrication processes. The method includes providing a substrate, forming an active pattern on the substrate, forming a first insulating layer on the substrate, forming a gate electrode and a pixel electrode on the substrate, forming a second insulating layer provided with a contract hole on the substrate, and forming source and drain electrodes respectively connected to a source region and a drain region through the contact hole.

Abstract: A TFT array substrate includes a substrate, seminconductor layers, a gate insulating layer, a storage electrode, and a passivation layer. The semiconductor layers that include a first, a second, and a third semiconductor layer positioned above the substrate. The gate insulating layer separates the first semiconductor layer from the second semiconductor layer and the second semiconductor layer from the third seminconductor layer. The storage electrode is positioned above the gate insulating layer and a passivation layer directly encloses a top and a plurality of side surfaces of the storage electrode. A method of making a TFT array substrate includes providing the first semiconductor layer with first source/drain regions, providing the second semiconductor layer with a storage layer, and providing the third semiconductor layer with second source/drain regions between the substrate and the gate insulating layer.

Abstract: A method of fabricating a liquid crystal display device includes forming a first active layer on a substrate, forming a first gate insulating film on the first active layer, forming a first gate electrode on the first gate insulating film, forming a first interlayer insulating layer on the first gate electrode, forming a pixel electrode on the first interlayer insulating layer, forming at least one insulating film to cover the pixel electrode, forming a first plurality of contact holes in the first interlayer insulating layer and the at least one insulating film, the first plurality of contact holes including a first source contact hole to expose a first source area of the first active layer and a first drain contact hole to expose a first drain area of the first active layer, forming a pixel contact hole in the at least one insulating film to expose the pixel electrode, performing a hydrogenating treatment to the substrate including the first source contact hole, the first drain contact hole, and the pixel c

Abstract: A method of fabricating a liquid crystal display device includes forming an active pattern and a data line on a substrate, forming a first insulating layer on the data line, forming a second insulating layer on the substrate, forming a gate electrode on the second insulating layer above the active pattern, forming a third insulating layer on the substrate, forming first and second contact holes through the second and third insulating layers to expose first and second portions of the active pattern, and forming a third contact hole through the first, second, and third insulating layers exposing a portion of the data line, respectively, and forming source and drain electrodes on the third insulating layer, the source electrode connected to the first exposed portion of the active pattern through the first contact hole and connected to the first exposed portion of the data line through the third contact hole, and the drain electrode connected to the second exposed portion of the active pattern through the second

Abstract: A method of fabricating a liquid crystal display device includes forming an active pattern on a substrate, forming a first insulating layer on the substrate over the active pattern, forming a gate line including a gate electrode and a data line on the substrate, the data line including a plurality of segmented portions electrically disconnected from each other, forming source and drain regions in the active pattern, forming a second insulating layer on the first insulating layer, the gate line, and the data line, simultaneously forming a pair of first contact holes through the first and second insulating layers, a second contact hole through the second insulating layer, and a pair of third contact holes through the second insulating layer, forming a conductive material along an entire surface of the substrate, and patterning the conductive material to form a drain electrode, a first connection line, and a second connection line on the second insulating layer.

Abstract: A method of fabricating a CMOS thin film transistor. First and second active layers are formed at first and second transistor areas of a transparent substrate. A gate insulating film is formed at middle portions of the first and second active layers while the sides of each are exposed. Each exposed side is ion-doped with a first conductive impurity at a first energy and at a first concentration using the first and second gate electrodes as mask, thus forming first and second high-concentrated areas. A photoresist pattern that covers the first transistor area is formed on the transparent substrate. The second high-concentrated impurity area is ion-doped with a second conductive impurity, at a second energy that is greater than the first energy and at a second concentration that is greater than the first concentration, to form a third high-concentrated impurity area that is counter-doped.