Abstract: A method is provided for performing handoff in a communication system including a serving base station (BS) in communication with a mobile station (MS), at least one neighbor BS using a communication scheme different from a communication scheme of the serving BS, and the MS capable of communicating with the neighbor BS. The method includes compensating a signal strength of one of the serving BS and the neighbor BS, received at the MS, such that handoff decision is possible, and determining whether to perform a handoff of the MS, using the compensated signal strengths.

Abstract: An apparatus and method for providing subscriber information in a mobile communication system are provided. A database stores registered information containing subscriber information, a scope of persons to view the subscriber information, and an open level for the subscriber information. A wait time information management server stores the subscriber information in the database. Upon request for a call from a calling terminal, the wait time information management server searches for the subscriber information in the database and provides the searched subscriber information according to the open level to an MSC. The MSC sends wait time information based on the subscriber information received from the wait time information management server to the calling terminal.

Abstract: There is provided a transmitting apparatus in a broadband wireless communication system in which a control channel generator generates a control channel that includes an user information and a resource group information allocated to the user based on position and number of at least one predetermined resource unit included in the resource group which consists of at least one predetermined resource unit and a channel generator for allocating the data to resources according to the control channel, and a method thereof. Also, there is provided a receiving apparatus in response to the transmitting apparatus and a method thereof.

Abstract: The present invention relates to a plasma display panel, and more particularly, to an apparatus and method for driving a plasma display panel. According to an embodiment of the present invention, the apparatus for driving the plasma display panel includes a temperature sensor that senses a temperature of the plasma display panel, an erase signal tilt control unit that controls a tilt of an erase signal for erasing charges within a cell of the plasma display panel depending on the sensed temperature, and a driving unit that supplies an initialization signal for initializing the cell, an address signal for selecting the cell and a sustain signal for generating a sustain discharge in the cell to the plasma display panel after the charges within the cell are erased using the erase signal.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: Disclosed is a contents conversion apparatus which includes; a demultiplexer for demultiplexing an externally input broadcasting stream of a first broadcasting standard and dividing it into an audio stream, a video stream, and a data stream; a converter for converting a coding format of the audio stream to a coding format of a desired second broadcasting standard, and converting a broadcasting service format of the data stream to a service format of the second broadcasting standard; a protocol server for providing a protocol stream of the second broadcasting standard; and a multiplexer for multiplexing the audio stream and the data stream output from the converter, the video stream and the protocol stream to generate one transfer stream.

Abstract: Disclosed is a digital broadcast protocol conversion system including: a PSIP/PSI extractor for demultiplexing a transport stream of an ATSC broadcast standard to extract PSIP/PSI data; an SI/PSI extractor for demultiplexing a transport stream of a DVB broadcast standard to extract SI/PSI data; a protocol converter for converting the PSIP/PSI data to SI′/PSI′ data corresponding to a broadcast protocol of the DVB broadcast standard or converting the SI/PSI data to PSIP′/PSI′ data corresponding to a broadcast protocol of the ATSC broadcast standard; and a multiplexer for multiplexing the SI′/PSI′ data and the transport stream having the PSIP/PSI data extracted therefrom, or multiplexing the PSIP′/PSI′ data and the transport stream having the PSIP/PSI data extracted therefrom, thereby converting the broadcast protocol between different broadcast standards.

Abstract: An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.

Abstract: Disclosed is a PSIP converter which comprises: a protocol data extractor for demultiplexing a terrestrial broadcasting TS or a satellite broadcasting TS, extracting audio/video data and PSIP/PSI data from the terrestrial broadcasting TS and audio/video data and SI/PSI data from the satellite broadcasting TS; a protocol data converter for using the PSIP/PSI data or the SI/PSI data to generate PSIP/PSI data of a corresponding digital cable television broadcasting standard; a protocol data inserter for inserting the digital cable television broadcasting standard PSIP/PSI data into the audio/video data extracted by the protocol data extractor through TS multiplexing, and generating a digital cable broadcasting TS; and a system controller for checking the protocol data extractor, the protocol data converter, and the protocol data inserter, and controlling their operation.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract: An apparatus for growing a silicon ingot including a graphite crucible in which a quartz crucible is placed, a driving axis connected to a lower part of the graphite crucible to revolve and move the graphite crucible up and down so as to support the graphite crucible, a heating element to heat the graphite crucible, and an insulating wall to protect and thermally isolate the graphite crucible, heating means, and driving axis in part from the external environment. The driving axis includes a hollow axis part having a hollow inside, an insulating axis part attached to the bottom of the hollow axis part to inhibit heat transfer, and a cylindrical axis part attached to the bottom of the insulating axis part. The construction of the driving axis reduces a temperature gradient in the molten silicon, improving uniform heat distribution for increased silicon ingot quality.

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

Abstract: The present invention relates to a single crystalline silicon ingot by Czochralski method and, more particularly, to a single crystalline silicon ingot, a wafer and a method of producing a single crystalline silicon ingot in which an oxidation-induced stacking fault ring is distributed widely and which has an agglomerated vacancy point defect area of low density wherein DSOD exists only, without FPD. Accordingly, an oxidation-induced stacking fault area having a micro-vacancy defect area of low density is distributed widely from the ingot edge to the ingot center in a single crystalline silicon ingot and a wafer fabricated by the present invention. As the micro-vacancy defect area has no FPD but may have DSOD, a coarsely agglomerated vacancy point defect area in which FPD and DSOD cohabit is shrunken or even eliminated. Therefore, the present invention improves the product quality as well as device yield.

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.