Patents by Inventor Joong-kon Son

Joong-kon Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GaN-based compound semiconductor device
    Publication number: 20060237709
    Abstract: A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an AlxInyGa1-x-yN substrate (0?x?1, 0?y?1, and 0?x+y?1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0° and less than 1° with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.
    Type: Application
    Filed: November 23, 2005
    Publication date: October 26, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sung-nam Lee, Ho-sun Paek, Joong-kon Son, Tan Sakong
  • Semiconductor laser diode having ridge portion and method of manufacturing the same
    Publication number: 20060231850
    Abstract: Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.
    Type: Application
    Filed: February 10, 2006
    Publication date: October 19, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Tan Sakong, Tae-hoon Jang, Joong-kon Son, Han-youl Ryu
  • III-V group GaN-based semiconductor device and method of manufacturing the same
    Publication number: 20050082548
    Abstract: Provided are a III-V group GaN-based compound semiconductor device and a method of manufacturing the same. The device includes an AlGaN diffusion blocking layer and an InGaN sacrificial layer interposed between an active layer having a multiple quantum well and a p-type GaN-based compound semiconductor layer.
    Type: Application
    Filed: September 29, 2004
    Publication date: April 21, 2005
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Tan Sakong, Ho-sun Paek, Sung-nam Lee, Joong-kon Son, Won-seok Lee