Abstract: A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film.

Abstract: A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded local doped region remains at the total area of sidewalls of floating bodies isolated from each other.

Abstract: A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film.

Abstract: A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film.

Abstract: A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded local doped region remains at the total area of sidewalls of floating bodies isolated from each other.

Abstract: A method for fabricating a semiconductor memory device includes: forming a trench in a substrate; forming a gate insulation layer along the trench, wherein the gate insulation layer is thicker at an upper region of the trench than at a lower region thereof; forming a gate pattern on the gate insulation layer to fill the trench; forming a first active region over a first region of the gate pattern to overlap the gate pattern at the thicker region of the gate insulation layer; and forming a second active region formed over a second region of the gate pattern and spaced apart from the first active region by a floating body formed therebetween, wherein the second region is vertically lower than the first region.

Abstract: A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded local doped region remains at the total area of sidewalls of floating bodies isolated from each other.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device that includes forming a gate pattern on a substrate having a stacked structure including a lower silicon layer, an insulating layer, and an upper silicon layer. The method further includes forming spacers on sidewalls of the gate pattern. Still further, the method includes etching the upper silicon layer using the gate pattern as a mask to form a floating body and expose a portion of the insulating layer. The method further includes depositing a conductive layer over the gate pattern and exposed insulating layer, and performing a thermal process on the conductive layer to form a source/drain region in the floating body.

Abstract: A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film.

Abstract: A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded local doped region remains at the total area of sidewalls of floating bodies isolated from each other.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device that includes forming a gate pattern on a substrate having a stacked structure including a lower silicon layer, an insulating layer, and an upper silicon layer. The method further includes forming spacers on sidewalls of the gate pattern. Still further, the method includes etching the upper silicon layer using the gate pattern as a mask to form a floating body and expose a portion of the insulating layer. The method further includes depositing a conductive layer over the gate pattern and exposed insulating layer, and performing a thermal process on the conductive layer to form a source/drain region in the floating body.