Abstract: The present invention relates to novel components of the cleavage/polyadenylation machinery of precursor mRNA as well as to the complex containing the new components and its use. The complex is obtained by using one component thereof as a bait and isolating a highly organized complex consisting of at least 13 distinct proteins.

Abstract: This invention relates to an illumination system for scanning lithography with wavelengths ≦193 nm, particularly EUV lithography, for the illumination of a slit. The illumination system includes a light source, and a field lens group. The field lens group is shaped so that an illuminated field is distorted in a plane of a reticle perpendicular to a scanning direction.

Abstract: There is provided an illumination system for light having wavelengths ≦193 nm. The system includes (a) a first raster element for receiving a first diverging portion of the light and directing a first beam of the light, (b) a second raster element for receiving a second diverging portion of the light and directing a second beam of the light, where the first raster element is oriented at an angle with respect to the second raster element to cause a center ray of the first beam to intersect with a center ray of the second beam at an image plane, and (c) an optical element for imaging secondary sources of the light in an exit pupil, where the optical element is situated in a path of the light after the first and second raster elements and before the image plane.

Abstract: An illumination system comprises (a) a first optical element upon which a light beam impinges, where the first optical element has first raster elements that partition said light beam into light channels; (b) a second optical element that receives said light channels, where the second optical element has a second raster elements; (c) an object plane that receives said light channels via said second optical element; and (d) an exit pupil that is provided with an illumination via said object plane. The system is characterized by an assignment of a member of said first raster elements and a member of said second raster elements to each of said light channels to provide a continuous beam path from said first optical element to said object plane for each of said plurality of light channels. The assignment is changeable to provide an adjustment of said illumination in said exit pupil.

Abstract: There is provided an illumination system for a projection exposure system. The illumination system includes (a) a light source for the emission of wavelengths of ≦193 nm, (b) a device for producing secondary light sources, the device including a mirror having raster elements, (c) a diaphragm plane, (d) a first optical element for imaging the diaphragm plane in an exit pupil of the illumination system, (e) an object plane in which images of the raster elements are substantially in line and illuminate a predetermined field with an intensity distribution, and (f) a second optical element for producing a light distribution in the exit pupil. The light distribution is specified by a parameter selected from the group consisting of type and filling degree, and the parameter is modified by a technique selected from the group consisting of exchanging, displacing and deforming the second optical element.

Abstract: There is provided an illumination system for EUV-wavelengths. The illumination system includes a plurality of EUV-light sources and an optical unit combining the plurality of EUV-light sources.

Abstract: Partial objective for illumination of an image field in an illuminating device of a microlithographic projection exposure apparatus, arranged between a aperture plane and an image plane. The partial objective comprises a first lens group and a second lens group with a lens with a first aspheric lens surface. The second lens group has at least a first lens with negative refractive power and at least a second lens with positive refractive power. The maximum field height Yimmax within the image field is at least 40 mm; the image-side numerical aperture is at least 0.15. The distribution of the chief ray angles PF over the field heights Yim within the image field is given by a pupil function PF(Yim), which consists of a linear contribution c1·Yim and a non-linear contribution PFNL(Yim), the non-linear contribution PFNL(Yim) being at least +15 mrad for the maximum positive field height Yimmax.

Abstract: The invention concerns an illumination system for wavelengths<193 nm, especially for EUV-lithography with a plurality of light sources a mirror device for creating secondary light sources comprising several mirrors, said mirrors are comprising raster elements. The invention is characterized in that the plurality of light sources are coupled together in order to illuminate the exit pupil of the illumination system up to a predetermined degree of filling.

Abstract: A projection exposure apparatus for microlithography using a wavelength≦193 nm, includes (A) a primary light source, (B) an illumination system having (1) an image plane, (2) a plurality of raster elements for receiving light from the primary light source, and (3) a field mirror for receiving the light from the plurality of raster elements and for forming an arc-shaped field having a plurality of field points in the image plane, and (C) a projection objective. The illumination system has a principle ray associated with each of the plurality of field points thus defining a plurality of principle rays. The plurality of principle rays run divergently into the projection objective.

Abstract: There is provided an illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength ≦193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.

Abstract: The invention relates to a multi-mirror-system for an illumination system, especially for lithography with wavelengths ≦193 nm comprising am imaging system, wherein said imaging system comprises at least a first mirror and a second mirror, an object plane, an image plane, wherein the imaging system forms an image of the object, an arc-shaped field in said image plane, whereby the radial direction of in the middle the arc-shaped field defines a scanning direction. The multi-mirror-system is characterized in that at least said first mirror and said second mirror of said imaging system are arranged in the optical path of the imaging system in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm, preferably 2 mm, most preferably 1 mm in scanning direction.

Abstract: There is provided an illumination system for light having wavelengths ≦193 nm. The system includes (a) a first raster element for receiving a first diverging portion of the light and directing a first beam of the light, (b) a second raster element for receiving a second diverging portion of the light and directing a second beam of the light, where the first raster element is oriented at an angle with respect to the second raster element to cause a center ray of the first beam to intersect with a center ray of the second beam at an image plane, and (c) an optical element for imaging secondary sources of the light in an exit pupil, where the optical element is situated in a path of the light after the first and second raster elements and before the image plane.

Abstract: There is provided an illumination system for illuminating a field with an aspect ratio other than 1:1 in an image plane. The illumination system includes (a) a light source, and (b) an optical component for transforming the light source into a secondary light source, where the optical component produces an anamorphotic effect that splits the secondary light source into a tangential secondary light source and a sagital secondary light source. The optical component has a first mirror or a first lens, having a raster element. The raster element has an aspect ratio smaller than the aspect ratio of the field in the image plane, and the raster element is imaged into the image plane.

Abstract: The invention relates to a lighting system for a projection lighting system that comprises: a light source (1) that emits light of wavelengths of ≦193 nm, especially wavelengths between 10 nm and 20 nm; a collector unit (30, 32) for illuminating a mirror device that produces secondary light sources (14), said mirror device comprising at least one mirror (34) that is subdivided into grid elements (10, 40, 42, 100, 102); a diaphragm plane (16); one or more optical elements (36, 38) that represent the diaphragm plane (16) in the exit pupil (390) of the lighting system; an object plane (39) in which the images of the grid elements are substantially in line and illuminate a predetermined filed with an intensity distribution; an optical element (30, 310, 320, 330) that produces an intensity distribution in the exit pupil (390) that is defined by the kind and/or filling degree, said kind and/or filling degree of the intensity distribution being modifiable buy exchanging, displacing or deforming the optical elemen

Abstract: An illuminating device of a projection-microlithographic device includes a light source, an objective, and a device which produces a particular image field configuration. The device has fields which, in the direction of scanning movement, are separated at least in parts by a free zone, and are located in a peripheral region of the circular image field of a downstream projection objective in a manner at least approximating rotation symmetry. The integral of the quantity of light passing through the fields in the scanning direction are constant over the entire extent of the image field configuration in the direction at right angles to the scanning direction. Such an image field configuration replaces a conventional rectangular scanner slot formation whose width in the scanning direction corresponds to the forementioned integral of the image field configuration. The design of the image field configuration permits an approximately rotationally symmetric illumination of the projection objective.

Abstract: The invention concerns an illumination system, particularly for microlithography with wavelengths ≦193 nm, comprising a light source, a first optical component, a second optical component, an image plane and an exit pupil. The first optical component transforms the light source into a plurality of secondary light sources being imaged by the second optical component in said exit pupil. The first optical component comprises a first optical element having a plurality of first raster elements, which are imaged into said image plane producing a plurality of images being superimposed at least partially on a field in said image plane. The first raster elements deflect incoming ray bundles with first deflection angles, wherein at least two of the first deflection angles are different. The first raster elements are preferably rectangular, wherein the field is a segment of an annulus.

Abstract: The invention concerns an illumination system for wavelengths (193 nm, particularly for EUV lithography with at least one light source, which has an illumination A in one surface; at least one device for producing secondary light sources; at least one mirror or lens device, comprising at least one mirror or one lens, which is (are) divided into raster elements; one or more optical elements, which are arranged between the mirror or lens device that comprises at least one mirror or one lens, which is (are) divided into raster elements, and the reticle plane, wherein the optical elements image the secondary light sources in the exit pupil of the illumination system.

Abstract: A REMA objective is realized by introduction of a few (1 to 5 units) aspherical surfaces of high-quality correction with a low number of lenses (no more than 10), and low path in glass (maximum 25% to 30%) of the object-reticle distance, thus enhancing efficiency.

Abstract: Partial objective for illumination of an image field in an illuminating device of a microlithographic projection exposure apparatus, arranged between a aperture plane and an image plane. The partial objective comprises a first lens group and a second lens group with a lens with a first aspheric lens surface. The second lens group has at least a first lens with negative refractive power and at least a second lens with positive refractive power. The maximum field height Yimmax within the image field is at least 40 mm; the image-side numerical aperture is at least 0.15. The distribution of the chief ray angles PF over the field heights Yim within the image field is given by a pupil function PF(Yim), which consists of a linear contribution c1·Yim and a non-linear contribution PFNL(Yim), the non-linear contribution PFNL(Yim) being at least +15 mrad for the maximum positive field height Yimmax.

Abstract: An illuminating device of a projection-microlithographic device includes a light source, an objective, and a device which produces a particular image field configuration. The device has fields which, in the direction of scanning movement, are separated at least in parts by a free zone, and are located in a peripheral region of the circular image field of a downstream projection objective in a manner at least approximating rotation symmetry. The integral of the quantity of light passing through the fields in the scanning direction are constant over the entire extent of the image field configuration in the direction at right angles to the scanning direction. Such an image field configuration replaces a conventional rectangular scanner slot formation whose width in the scanning direction corresponds to the forementioned integral of the image field configuration. The design of the image field configuration permits an approximately rotationally symmetric illumination of the projection objective.