Abstract: Methods are disclosed for system scenario-based design for an embedded platform whereon a dynamic application is implemented. The application meets at least one guaranteed constraint. Temporal correlations are assumed in the behavior of internal data variables used in the application, with the internal data variables representing parameters used for executing a portion of the application. An example method includes determining a distribution over time of an N-dimensional cost function, with N an integer number N?1, corresponding to the implementation on the platform for a set of combinations of the internal data variables. The method also includes partitioning an N-dimensional cost space in at least two bounded regions, each bounded region containing cost combinations corresponding to combinations of values of the internal data variables of the set that have similar cost and frequency of occurrence, whereby one bounded region is provided for rarely occurring cost combinations.

Abstract: A memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.

Abstract: A memory device having complementary global and local bit-lines, the complementary local bit-lines being connectable to the complementary global bit-lines by means of a local write receiver which is configured for creating a full voltage swing on the complementary local bit lines from a reduced voltage swing on the complementary global bit lines. The local write receiver comprises a connection mechanism for connecting the local to the global bit-lines and a pair of cross-coupled inverters directly connected to the complementary local bit lines for converting the reduced voltage swing to the full voltage swing on the complementary local bit lines.

Abstract: Methods are disclosed for system scenario-based design for an embedded platform whereon a dynamic application is implemented. The application meets at least one guaranteed constraint. Temporal correlations are assumed in the behaviour of internal data variables used in the application, with the internal data variables representing parameters used for executing a portion of the application. An example method includes determining a distribution over time of an N-dimensional cost function, with N an integer number N?1, corresponding to the implementation on the platform for a set of combinations of the internal data variables. The method also includes partitioning an N-dimensional cost space in at least two bounded regions, each bounded region containing cost combinations corresponding to combinations of values of the internal data variables of the set that have similar cost and frequency of occurrence, whereby one bounded region is provided for rarely occurring cost combinations.

Abstract: An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Abstract: A method for improving writability of an SRAM cell is disclosed. In one aspect, the method includes applying a first voltage higher than the global ground voltage and a third voltage higher than the global supply voltage to the ground supply nodes of the invertors of the SRAM cell, pre-charging one of the complementary bitlines to the global ground voltage, and applying a second voltage higher than the global supply voltage to the access transistors during a write operation to the SRAM cell.

Abstract: An ultra low power sense amplifier circuit for amplifying a low swing input signal to a full swing output signal is disclosed. In one aspect, the amplifier circuit includes a first amplifier stage for pre-amplifying the input signal to an intermediate signal on its internal nodes, a second amplifier stage for amplifying the intermediate signal to the output signal, and a control circuit for sequentially activating the first and second amplifier. The first amplifier has a capacitor for limiting energy consumption and two upsized PMOS transistors without NMOS transistors.

Abstract: A semiconductor memory device is disclosed. In one aspect, the device includes memory blocks with memory cells connected to a local bit-line, each local bit-line being connectable to a global bit-line for memory readout. There are also pre-charging circuitry for pre-charging the bit-lines and a read buffer for discharging the global bit-line during a read operation. The local bit-lines are pre-charged to a predetermined first voltage substantially lower than the supply voltage (VDD) of the memory device. A segment buffer is provided between each local bit-line and an input node of the respective read buffer. The segment buffer activates the read buffer during the read operation upon occurrence of a discharge on the connected local bit-line.