Abstract: A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.

Abstract: A semiconductor wafer has a plurality of semiconductor die separated by a saw street. The wafer is mounted to dicing tape. The wafer is singulated through the saw street to expose side surfaces of the semiconductor die. An ESD protection layer is formed over the semiconductor die and around the exposed side surfaces of the semiconductor die. The ESD protection layer can be a metal layer, encapsulant film, conductive polymer, conductive ink, or insulating layer covered by a metal layer. The ESD protection layer is singulated between the semiconductor die. The semiconductor die covered by the ESD protection layer are mounted to a temporary carrier. An encapsulant is deposited over the ESD protection layer covering the semiconductor die. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The ESD protection layer is electrically connected to the interconnect structure to provide an ESD path.

Abstract: A semiconductor wafer has a plurality of semiconductor die separated by a saw street. The wafer is mounted to dicing tape. The wafer is singulated through the saw street to expose side surfaces of the semiconductor die. An ESD protection layer is formed over the semiconductor die and around the exposed side surfaces of the semiconductor die. The ESD protection layer can be a metal layer, encapsulant film, conductive polymer, conductive ink, or insulating layer covered by a metal layer. The ESD protection layer is singulated between the semiconductor die. The semiconductor die covered by the ESD protection layer are mounted to a temporary carrier. An encapsulant is deposited over the ESD protection layer covering the semiconductor die. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The ESD protection layer is electrically connected to the interconnect structure to provide an ESD path.

Abstract: A semiconductor device includes a substrate and a via extending through the substrate. A first insulating layer is disposed on sidewalls of the via. An electrically conductive material is disposed in the via over the first insulating layer to form a TSV. A first interconnect structure is disposed over a first side of the substrate. A semiconductor die or a component is mounted to the first interconnect structure. An encapsulant is disposed over the first interconnect structure and semiconductor die or component. A second interconnect structure is disposed over the second side of the substrate. The second interconnect structure is electrically connected to the TSV. The second interconnect structure includes a second insulating layer disposed over the second surface of the substrate and TSV, and a first conductive layer disposed over the TSV and in contact with the TSV through the second insulating layer.

Abstract: A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the substrate. A semiconductor die or component is mounted to the first interconnect structure. An encapsulant is deposited over the first interconnect structure and semiconductor die or component. A portion of a second side of the substrate is removed to reduce its thickness and expose the TSV. A second interconnect structure is formed over the second side of the substrate. The encapsulant provides structural support while removing the portion of the second side of the substrate. The second interconnect structure is electrically connected to the conductive via. The second interconnect structure can include a redistribution layer to extend the conductivity of the conductive via. The semiconductor device is mounted to a printed circuit board through the second interconnect structure.

Abstract: A semiconductor wafer has a plurality of semiconductor die separated by a saw street. The wafer is mounted to dicing tape. The wafer is singulated through the saw street to expose side surfaces of the semiconductor die. An ESD protection layer is formed over the semiconductor die and around the exposed side surfaces of the semiconductor die. The ESD protection layer can be a metal layer, encapsulant film, conductive polymer, conductive ink, or insulating layer covered by a metal layer. The ESD protection layer is singulated between the semiconductor die. The semiconductor die covered by the ESD protection layer are mounted to a temporary carrier. An encapsulant is deposited over the ESD protection layer covering the semiconductor die. The carrier is removed. An interconnect structure is formed over the semiconductor die and encapsulant. The ESD protection layer is electrically connected to the interconnect structure to provide an ESD path.

Abstract: A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.

Abstract: A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package.

Abstract: A semiconductor device has a conductive via formed through in a first side of the substrate. A first interconnect structure is formed over the first side of the substrate. A semiconductor die or component is mounted to the first interconnect structure. An encapsulant is deposited over the first interconnect structure and semiconductor die or component. A portion of a second side of the substrate is removed to reduce its thickness and expose the TSV. A second interconnect structure is formed over the second side of the substrate. The encapsulant provides structural support while removing the portion of the second side of the substrate. The second interconnect structure is electrically connected to the conductive via. The second interconnect structure can include a redistribution layer to extend the conductivity of the conductive via. The semiconductor device is mounted to a printed circuit board through the second interconnect structure.

Abstract: A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package.

Abstract: An integrated circuit encapsulation system with vent is provided including providing a sheet material, forming a leadframe array on the sheet material, forming a leadframe air vent on the leadframe array, attaching an integrated circuit to the leadframe array, mounting the leadframe array in a mold and encapsulating the integrated circuit and the leadframe array.

Abstract: An integrated circuit package system provides a known good die module by providing a leadframe, providing a first die, attaching the first die to the leadframe, and encapsulating at least the first die. A second die is attached to the known good die module such that the known good die module is a substrate for the second die. The second die is electrically attached to the known good die module. At least the second die is additionally encapsulated.

Abstract: An integrated circuit package system is provided forming a lead from a padless lead frame, and encapsulating the lead for supporting an integrated circuit die with a first molding compound for encapsulation with a second molding compound.

Abstract: An integrated circuit package system includes an integrated circuit package having a downset terminal lead, a planar recessed lead surface of the downset terminal lead, and an attached integrated circuit over the planar recessed lead surface.

Abstract: A method for fabricating large die package structures is provided wherein at least portions of the leadtips of at least a plurality of leadfingers of a leadframe are electrically insulated. A die is positioned on the electrically insulated leadtips. The die is electrically connected to at least a plurality of the leadfingers.

Abstract: A semiconductor package is provided. A leadframe including a die attach paddle, a number of inner leads, and a number of outer leads, and a number of extended lead tips on the number of outer leads. The inner edges of the number of extended lead tips are in substantial alignment with the inner edges of the number of inner leads. A die is attached to the die attach paddle. A number of bonding wires is used to connect the die to the number of inner leads and the extended lead tips on the number of outer leads, and an encapsulant is formed over the leadframe and the die.

Abstract: A semiconductor package is provided. A leadframe including a die attach paddle, a number of inner leads, and a number of outer leads, and a number of extended lead tips on the number of outer leads. The inner edges of the number of extended lead tips are in substantial alignment with the inner edges of the number of inner leads. A die is attached to the die attach paddle. A number of bonding wires is used to connect the die to the number of inner leads and the extended lead tips on the number of outer leads, and an encapsulant is formed over the leadframe and the die.

Abstract: A method for fabricating large die package structures is provided wherein at least portions of the leadtips of at least a plurality of leadfingers of a leadframe are electrically insulated. A die is positioned on the electrically insulated leadtips. The die is electrically connected to at least a plurality of the leadfingers.