Abstract: A method of adsorbing a highly reactive gas onto an adsorbent material comprising adsorbing the highly reactive gas to the adsorbent material. The absorbent material comprises at least one Lewis basic functional group, or pores of a size to hold a single molecule of the highly reactive gas, or inert moieties which are provided to the adsorbent material at the same time at the same time as the highly reactive gas, prior to adsorbing the highly reactive gas or after adsorbing the highly reactive gas, or the highly reactive gas reacts with moieties of the adsorbent material resulting in passivation of the adsorbent material. A rate of decomposition of the adsorbed highly reactive gas is lower than a rate of decomposition for the neat gas at equal volumetric loadings and equal temperatures for both the adsorbed highly reactive gas and the neat gas.

Abstract: Disclosed is a valve assembly and process for dispensing gas from a storage vessel that comprises a nozzle for discharging the gas. The valve assembly has a passage having a first end is in communication with the nozzle, and a second end in communication with an interior of the storage vessel where the gas is stored. A shut off valve is interposed in the passage for blocking or allowing gas to pass between said first end and the second end of the passage. A check valve may be secured in a bore of the nozzle to prevent accidental gas discharge.

Abstract: A method of adsorbing a highly reactive gas onto an adsorbent material comprising adsorbing the highly reactive gas to the adsorbent material. The adsorbent material comprises at least one Lewis basic functional group, or pores of a size to hold a single molecule of the highly reactive gas, or inert moieties which are provided to the adsorbent material at the same time at the same time as the highly reactive gas, prior to adsorbing the highly reactive gas or after adsorbing the highly reactive gas, or the highly reactive gas reacts with moieties of the adsorbent material resulting in passivation of the adsorbent material. A rate of decomposition of the adsorbed highly reactive gas is lower than a rate of decomposition for the neat gas at equal volumetric loadings and equal temperatures for both the adsorbed highly reactive gas and the neat gas.

Abstract: A valve assembly and process are disclosed that permit charging and dispensing gas from a storage vessel through one passage and one nozzle. Only one passage is in communication with the pressurized gas in the storage vessel which focuses safety measures on a single passage. Gas is passed through a single regulator to dispense gas from the storage vessel and to charge the storage vessel. The regulator utilizes a diaphragm which when pressurized by a separate fluid permits passage through the regulator. This separate fluid does not have access to the interior of the storage vessel.

Abstract: A method of adsorbing a highly reactive gas onto an adsorbent material comprising adsorbing the highly reactive gas to the adsorbent material. The adsorbent material comprises at least one Lewis basic functional group, or pores of a size to hold a single molecule of the highly reactive gas, or inert moieties which are provided to the adsorbent material at the same time at the same time as the highly reactive gas, prior to adsorbing the highly reactive gas or after adsorbing the highly reactive gas, or the highly reactive gas reacts with moieties of the adsorbent material resulting in passivation of the adsorbent material. A rate of decomposition of the adsorbed highly reactive gas is lower than a rate of decomposition for the neat gas at equal volumetric loadings and equal temperatures for both the adsorbed highly reactive gas and the neat gas.

Abstract: A method of purifying a target fluid containing one or more impurities, the method includes providing the target fluid to a vessel having an adsorbent material located therein, where the absorbent material is a metal organic framework (MOF) or a porous organic polymer (POP), preferentially adsorbing either the target fluid or at least one of the one or more impurities on the adsorbent material, and venting the target fluid from the vessel if the impurities are preferentially adsorbed on the adsorbent material or venting the one or more impurities from the vessel if the target fluid is preferentially adsorbed on the adsorbent material.

Abstract: A method of adsorbing a highly reactive gas onto an adsorbent material comprising adsorbing the highly reactive gas to the adsorbent material. The absorbent material comprises at least one Lewis basic functional group, or pores of a size to hold a single molecule of the highly reactive gas, or inert moieties which are provided to the adsorbent material at the same time at the same time as the highly reactive gas, prior to adsorbing the highly reactive gas or after adsorbing the highly reactive gas, or the highly reactive gas reacts with moieties of the adsorbent material resulting in passivation of the adsorbent material. A rate of decomposition of the adsorbed highly reactive gas is lower than a rate of decomposition for the neat gas at equal volumetric loadings and equal temperatures for both the adsorbed highly reactive gas and the neat gas.

Abstract: Polishing pads having a foundation layer and a window attached to the foundation layer, and methods of fabricating such polishing pads, are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a first modulus. A polishing layer is attached to the foundation layer and has a second modulus less than the first modulus. A first opening is through the polishing layer and a second opening is through the foundation layer. The first opening exposes at least a portion of the second opening and exposes a portion of the foundation layer. A window is disposed in the first opening and is attached to the exposed portion of the foundation layer.

Abstract: Polishing pads having a foundation layer and a window attached to the foundation layer, and methods of fabricating such polishing pads, are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a first modulus. A polishing layer is attached to the foundation layer and has a second modulus less than the first modulus. A first opening is through the polishing layer and a second opening is through the foundation layer. The first opening exposes at least a portion of the second opening and exposes a portion of the foundation layer. A window is disposed in the first opening and is attached to the exposed portion of the foundation layer.

Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.

Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part.

Abstract: Thermopile-based detection and monitoring/control systems are described, in applications such as inferring concentration of a multicomponent gas by sensing a tracer gas therein, utilizing fiber optic cables to provide multiple sensing paths in a cell, utilizing a modulated IR source switched in on/off cycles, verifying chemical reagent identities, and sensing of effluent following discharge from a contamination removal 8 element or cold trap. A thermopile infrared (TPIR) detector of highly compact character is described for such applications, and permits monitoring of species that may be problematic or otherwise deleterious in such environments. In one implementation, light source modulation and signal processing techniques are employed to improve signal to noise ratio and minimize calibration and complexity of the TPIR detector.

Abstract: A fluid storage and dispensing vessel having associated therewith a colorimetric member that is effective to change color in exposure to leakage of a gas contained in the vessel. The colorimetric member may be constituted by a film, e.g., of a shrink-wrap character, that contains or is otherwise associated with a colorimetric agent undergoing color change in exposure to fluid leaking from the vessel. Such shrink-wrap film may be applied to a portion of the vessel susceptible to leakage, or alternatively to the entire vessel, so that the film is colorimetrically effective to indicate the occurrence of a leakage event by visually perceptible change of color.

Abstract: Apparatus and process for the abatement of fluorine and fluorine-containing compounds from gases containing same, such as effluent gas streams from semiconductor manufacturing operations, wherein a fluorocompound abatement medium is injected into the fluorocompound-containing gas. The fluorocompound abatement medium comprises at least one of steam, methane and hydrogen, with the proviso that when the fluorocompound abatement medium contains methane and/or hydrogen, the injection of the fluorocompound abatement medium is conducted under non-combustion conditions.

Abstract: The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. Specifically, an infrared light beam is transmitted through a linear transmission path from an infrared light source through a sampling region containing material of interest into the thermopile detector. The linear transmission path reduces the risk of signal loss during transmission of the infrared light. The transmission path of the infrared light may comprise a highly smooth and reflective inner surface for minimizing such signal loss during transmission.

Abstract: An apparatus and method including storage and dispensing vessels to safely store and dispense gaseous hydrides, where the storage and dispensing vessels contain a solid-phase physical sorbent medium having a physically sorptive affinity for gaseous hydrides, and wherein the gaseous hydride is decomposed in the apparatus to generate hydrogen gas. The gaseous hydrides include, but are not limited to, silane, germane, stibine and diborane. The gaseous hydrides decompose spontaneously and/or decomposition is enhanced using surface modified adsorbents. The hydrogen generated by the apparatus may be used in a fuel cell or other hydrogen gas consuming unit.

Abstract: A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Abstract: A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Abstract: Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the active fluid at a predetermined flow rate, a mixer arranged to mix active gas from the active fluid source that is dispensed at such predetermined flow rate by the fluid flow metering device, with diluent fluid to form a diluted active fluid mixture, and a monitor arranged to measure concentration of active fluid in the diluted active fluid mixture, and responsively adjust the fluid flow metering device, to control the dispensing rate of the active fluid, and maintain a predetermined concentration of active fluid in the diluted active fluid mixture.

Abstract: A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an output signal correlative of the material in the sampling region, based on its interaction with the infrared radiation; and process control means arranged to receive the output of the infrared photometric monitor and to responsively control one or more process conditions in and/or affecting the process system.