Abstract: A triphenylene derivative useful for the production of organic light emitting diodes.

Abstract: The present invention relates to organic electronic devices that include an organic semiconducting material. The organic electronic devices may include organic light-emitting diodes, field-effect transistors, sensors, photodetectors, organic solar cells, organic thin-film transistors, organic integrated circuits, organic field-quench devices, organic light-emitting transistors, light-emitting electrochemical cells, or organic laser diodes.

Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one inventive organometallic complex, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation.

Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one of these organometallic complexes, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation, the organometallic complex including a monoanionic bidentate ligand of formula (IIa)

Abstract: The present invention is directed to the field of organic light emitting diode (OLED) electroluminescent devices comprising a novel hole-conducting material having a Spirobixanthen-unit.

Abstract: The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Abstract: The present invention relates to an organic electronic device comprising an organic semiconducting material comprising at least one compound according to the formulae (I) to (II).

Abstract: The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Abstract: The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Abstract: The present invention is directed to the field of organic light emitting diode (OLED) electroluminescent devices comprising a novel hole-conducting material having a Spirobixanthen-unit.

Abstract: The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material.

Abstract: The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Abstract: The present invention relates to pyrido[3,2-h]quinazolines and/or 5,6-dihydro derivatives thereof, methods for their production and doped organic semiconductor material which use such quinazolines.

Abstract: An iridium complex Ir(III)L 1L2L3 for emitting light with a central iridium ion Ir(III), with a ligand L3 as dionate from the group comprising pentane-2,4-dionate (acac), 2,2,6,6-tetramethyl-3,5-heptandionate (thd), 7,7-dimethyl-1,1,1,2,2,3,3-heptyfluoro-4,6-octandionate (fod), 4,4,4-trifluorol-(2-thienyl)butane-1,3-dionate (ttfa), 1,3-diphenylpropane-1,3-dionate (dbm), 4,4,4-trifluoro-1-(2-naphthyl)butane-1,3-dionate (tfnb) or 4,4,4-trifluoro-1-(1-naphthyl)butane-1,3-dionate and with two rigid aromatic ligands L1 and L2 with one nitrogen and one carbon atom, sharing in the ligand bond, preferably dibenzo[f,h]chinoline, benzo[h]chinoline or 5,6-dihydro-benzo[h]chinoline, characterized in that the iridium complex Ir(III)L1L2L3 is a first isomer (71), in which the nitrogen atom of the ligand L1 sharing in the ligand bonding and the nitrogen atom of the ligand L2 sharing in the ligand bonding are juxtaposed relative to the central iridium ion.

Abstract: Organometallic complexes which bear at least one ligand which has a unit having a triplet energy of at least 22 000 cm?1, a process for preparing the organometallic complexes, a mixture comprising at least one inventive organometallic complex, the use of the organometallic complexes or of the mixture in organic light-emitting diodes, the organometallic complexes preferably being used as emitter materials, and specific nitrogen- or phosphorus-substituted triphenylene derivatives and a process for their preparation.

Abstract: The present invention is directed to the field of organic light emitting diode (OLED) electroluminescent devices comprising a light-emitting layer containing an organic metal coordination compound with tailored ligands of the general structure (1) where (2) is a N-containing heterocycle comprising one or more cycle and where (3) is a unit with a triplet energy of at least 22,220 cm?1.

Abstract: The present invention relates to use of an organic matrix material for producing an organic semiconductor material, characterized in that the organic matrix material is comprised at least partly of a spirobifluorene compound, and the glass transition temperature of the organic matrix material is at least 120° C. and the highest occupied molecular orbital (HOMO) of the matrix material is at a maximum energy level of 5.4 eV; and also to an organic semiconductor material and electronic component.

Abstract: The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material.

Abstract: An iridium complex Ir(III)L 1L2L3 for emitting light with a central iridium ion Ir(III), with a ligand L3 as dionate from the group comprising pentane-2,4-dionate (acac), 2,2,6,6-tetramethyl-3,5-heptandionate (thd), 7,7-dimethyl-1,1,1,2,2,3,3-heptyfluoro-4,6-octandionate (fod), 4,4,4-trifluorol-(2-thienyl)butane-1,3-dionate (ttfa), 1,3-diphenylpropane-1,3-dionate (dbm), 4,4,4-trifluoro-1-(2-naphthyl)butane-1,3-dionate (tfnb) or 4,4,4-trifluoro-1-(1-naphthyl)butane-1,3-dionate and with two rigid aromatic ligands L1 and L2 with one nitrogen and one carbon atom, sharing in the ligand bond, preferably dibenzo[f,h]chinoline, benzo[h]chinoline or 5,6-dihydro-benzo[h]chinoline, characterized in that the iridium complex Ir(III)L1L2L3 is a first isomer (71), in which the nitrogen atom of the ligand L1 sharing in the ligand bonding and the nitrogen atom of the ligand L2 sharing in the ligand bonding are juxtaposed relative to the central iridium ion.

Abstract: Use of spiro compounds of formula (I), where K1 and K2 are, independently of one another, conjugated systems, as a laser dye.