Abstract: In the field of the counting of objects, a use is provided of a photosensitive assembly comprising at least one photodiode or one photoresistor, and a source of uniform illumination for illuminating the assembly, the establishment of a reference current supplied by the photosensitive assembly for an illuminated region of this assembly corresponding to a given fraction of the surface of the assembly, the disposition of objects to be counted against the photosensitive assembly, the illumination of the assembly by the source, the objects masking a part of the surface of the assembly, measurement of the current supplied by the assembly, and determination of a ratio between measured current and reference current to deduce the proportion between the surface area of photosensitive element illuminated and the surface area masked by the objects disposed. From this ratio, information on the number of objects disposed on the photosensitive assembly is extracted.

Abstract: The invention relates to a print sensor (160) comprising, on a transparent support substrate, a plurality of elementary acquisition cells (161), each cell comprising a photodetector (PS), a pyroelectric conversion element (PYR), and at least one TFT transistor (RT, SF) connected to both the photodetector (PS) and the pyroelectric conversion element (PYR).

Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.

Abstract: A control method for a photosensitive device comprises a matrix of photosensitive pixels distributed at the intersections of rows and columns of the matrix, each of the pixels comprising a photosensitive element able to generate an electrical signal under the effect of incident radiation and a switch controlled by a row conductor, the switch allowing the electrical signal to be transferred to a column conductor, the device further comprising a readout circuit connected to the column conductor to read out successively the various pixels connected to the column conductor, the method consisting, for each of the pixels, in activating the switch a first time by deactivating the associated readout circuit and in activating the switch a second time by activating the associated readout circuit, the duration separating the first activation and the second activation of the switch being equal to a predefined duration of integration.

Abstract: An image capture device to produce images of an object in contact with or in immediate proximity to the device comprises a sensor and illumination means capable of emitting a first type of radiation to illuminate an object in order to obtain an image thereof, the sensor comprising pixels that are sensitive to a second type of radiation dependent on the first type of radiation emitted by the illumination means. The sensor is formed on a monolithic substrate comprising multiple passages that are transparent to the first type of radiation. The illumination means comprise at least one source of the first type of radiation positioned so as to face one of the passages. The invention also relates to a method for producing this device.

Abstract: A method for displaying images on an active matrix screen, i representing a pointer of a current row and each pixel comprising a memory and a display component comprises controlling the brightness of the pixels by a binary word comprising a number of bits written successively into the memory and by controlling the display component as a function of a state of the bit written into the memory, the bits of each binary word being ranked by their weight from j=1 to j=P. The writes are sequenced: from a current row i, writing on the rows i+2j, from j=1 to j=P, the bit of weight j of each binary word associated with different pixels of rows i+2j; repeating, 2P?1 times, the writes mentioned above by shifting the pointer i of the current row by one unit on each repetition; i being determined modulo 2P?1 to lie between 1 and 2P?1.

Abstract: A control method for a photosensitive device comprises a matrix of photosensitive pixels distributed at the intersections of rows and columns of the matrix, each of the pixels comprising a photosensitive element able to generate an electrical signal under the effect of incident radiation and a switch controlled by a row conductor, the switch allowing the electrical signal to be transferred to a column conductor, the device further comprising a readout circuit connected to the column conductor to read out successively the various pixels connected to the column conductor, the method consisting, for each of the pixels, in activating the switch a first time by deactivating the associated readout circuit and in activating the switch a second time by activating the associated readout circuit, the duration separating the first activation and the second activation of the switch being equal to a predefined duration of integration.

Abstract: The invention concerns an image sensor comprising: at least one pixel having a photodiode (PD); a sensing node (SN) coupled to the photodiode via a transfer gate (104); and a further node (AN) coupled to the sensing node (SN) via a first transistor (112); and a control circuit (120) adapted: to apply, during a reset operation of the voltage levels at the sensing node (SN) and further node (AN), a first voltage level (VDD) to a control node of the first transistor (112); and to apply, during a transfer operation of charge from the photodiode (PD) to the sensing node (SN), a second voltage level (VSK) to the control node of the first transistor (112), the second voltage level being lower than the first voltage level and higher than a ground voltage of the pixel.

Abstract: A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.

Abstract: In the field of the counting of objects, a use is provided of a photosensitive assembly comprising at least one photodiode or one photoresistor, and a source of uniform illumination for illuminating the assembly, the establishment of a reference current supplied by the photosensitive assembly for an illuminated region of this assembly corresponding to a given fraction of the surface of the assembly, the disposition of objects to be counted against the photosensitive assembly, the illumination of the assembly by the source, the objects masking a part of the surface of the assembly, measurement of the current supplied by the assembly, and determination of a ratio between measured current and reference current to deduce the proportion between the surface area of photosensitive element illuminated and the surface area masked by the objects disposed. From this ratio, information on the number of objects disposed on the photosensitive assembly is extracted.

Abstract: A nanoprojector panel formed of an array of cells, each cell including a liquid crystal layer between upper and lower transparent electrodes, a MOS control transistor being arranged above the upper electrode, each transistor being covered with at least three metallization levels. The transistor of each cell extends in a corner of the cell so that the transistors of an assembly of four adjacent cells are arranged in a central region of the assembly. The upper metallization level extends above the transistors of each the assembly of four adjacent cells. The panel includes, for each assembly of four adjacent cells, a first conductive ring surrounding the transistors, the first ring extending from the lower metallization level to the upper electrode of each cell, with an interposed insulating material.

Abstract: Techniques for displaying images with an active-matrix liquid-crystal display. These techniques are particularly applicable to small displays, produced, for example, on silicon substrates (in LCOS, or liquid-crystal on silicon, technology). An auxiliary storage capacitor is formed on the drive transistor of a pixel, such that the drive transistor is formed between the liquid crystal and the storage capacitor. The capacitor includes multiple parallel partial capacitors each having an interdigitated structure in a respective metallization level. The metallizations (aluminum and/or copper) are opaque and the capacitor therefore protects the transistor from light, the level of protection being increased with the number of metallization levels used to form the interdigitated structures.

Abstract: An image sensor including an assembly of pixels each having a photodetector, and having circuitry for detecting, at a given time, pixels receiving a light intensity value substantially equal to a given value and coding circuitry providing an address for each of said pixels.

Abstract: An image sensor includes a matrix of active pixels (PXA). A pair of sampling capacitors (C1) and (C2) per matrix column processes the information delivered by the active pixel matrix. Each matrix column further includes a differential amplifier configured in follower mode connected between the pixels of the column and the pair of sampling capacitors via a pair of switches (I1) and (I2).

Abstract: An image sensor includes a matrix of active pixels (PXA). A pair of sampling capacitors (C1) and (C2) per matrix column processes the information delivered by the active pixel matrix. Each matrix column further includes a differential amplifier configured in follower mode connected between the pixels of the column and the pair of sampling capacitors via a pair of switches (I1) and (I2).