Abstract: In a method and a device for multiplying analog signals in integrated circuit elements, the memory elements are constituted by field-effect transistors having a number of layers of different dielectrics between the gate and the doped semiconductor substrate of the transistor. After discrete sampling of the analog signal has been performed at N points, the N amplitudes corresponding to the N points are stored in N transistors in the form of a threshold voltage. A multiplication of two corresponding terms is performed by recording the signal which is proportional to one sample of a function in the memory of the multiple dielectric layer type and by applying a given voltage to the gate of the transistor so as to generate a signal which is a linear function of the threshold voltage which is in turn a linear function of the writing signal at the input of a multiplier circuit.

Abstract: A liquid crystal cell is made by covering a wafer with an electrode system. A second insulating and transparent wafer is covered with a second system of semi-transparent electrodes. A wall of controlled thickness is deposited on a wafer around a periphery thereof. A metallic thread is deposited on a wafer with the same perimeter as the wall. The wafers are applied to each other and heated to fuse the thread on the top of the wall to join and seal the wafers with a liquid crystal between them within the wall.

Abstract: A charge-coupled device in which the storage and tranfer of information in the form of charges consisting of minority carriers are carried out with only two clocks. The device comprises a doped semiconductor substrate coated with an insulating thin film carrying a linear series of conductive electrodes. A variably doped surface region of the substrate creates a potential barrier for the minority carriers upstream of a charge-storage region. The same value of potential is fixed respectively for the odd-numbered electrodes and for the even-numbered electrodes, these values being modified in cycles so as to transfer the charge from each alternate electrode to one of the adjacent electrodes.A method of fabrication of the device consists in forming an insulating film and an assembly of conductive electrodes on a semiconductor substrate and in ion implantation by means of an ion beam in order to increase the doping of the substrate beneath one edge of the electrodes.