Abstract: A dispensing system comprising a container for containing a liquid to be dispensed, a sprayer comprising a spray head and a handle, and flexible tubing connectable at one of its ends to the container and connected at its other end to the sprayer for conveying liquid from the container to the sprayer. The container has a recess formed in one of its side walls sized and shaped for receiving the sprayer, and connectors for attaching the sprayer to the container with the sprayer received within the recess. The sprayer is detachable from the container for dispensing liquid from the container.

Abstract: A glass disc-shaped thyristor is disclosed. The thyristor comprises a body of semiconductive material having a first emitter region, a first base region, a second base region and a second emitter region therein. A cathode electrode and a gate electrode are affixed to one major surface, and an anode electrode is affixed to the second major surface of the body of semiconductor material. The cathode electrode is disc-shaped and is concentrically positioned with respect to the annular-shaped gate electrode. A ring-shaped glass member is affixed to a first major surface of the body of semiconductive material and to the edges of the cathode and base electrodes to form a seal protecting a PN junction at the interface of the first emitter and base regions. An anode electrode is affixed to the second major surface of the body of semiconductive material.

Abstract: The preferred embodiment of the invention comprises a glass sealed thyristor and a method for simultaneously constructing a plurality of thyristors and a common semiconductor wafer. The thyristor utilizes a body of semiconductor material with the cathode and base regions extending to one major surface and the anode region extending to the second major surface. A groove is etched in the first surface of the body of semiconductor material to expose the PN junction formed at the interface of the cathode emitter and cathode emitter base regions. A second groove is etched in the second major surface to expose the PN junction formed at the interface of the anode emitter region and the anode emitter base region. Ring shaped glass members are fused to the body of semiconductor material to form seals providing environmental protection for the PN junctions exposed by etching the grooves in the major surfaces of the body of semiconductor material.

Abstract: A method for etching semiconductor fusions to change their electrical characteristic, especially to reduce the firing current of thyristor fusions, to a predetermined desired value is disclosed.The etching is accomplished by subjecting fusions comprised of a body of semiconductor material, for example, silicon, including an anode emitter region therein and an anode electrode affixed thereto, an anode base region, a cathode base region and a gate electrode affixed thereto, and a cathode emitter region having a cathode electrode affixed thereto, to a plasma etchant comprising a mixture of CF.sub.4 and a carrier gas such for example, nitrogen, for a predetermined time interval. Following this etching cycle the firing current of the fusions is measured. Any fusions having a firing current in excess of the desired value at the end of the first etching cycle are subjected to another etching cycle to further reduce the firing current.

Abstract: A glass sealed semiconductor diode is disclosed. The diode includes a fusion which comprises a body of semiconductor material having a PN junction therein and metal electrodes affixed to opposed major surfaces of the semiconductor body. The fusion is encircled by an annular-shaped glass member with an inner surface of the annular-shaped glass member fused to an edge surface of the fusion to form a protective layer over the PN junction. An annular metallic member encircles the annular glass member with an inner surface thereof fused to an outer surface of the annular glass member.

Abstract: In the combination of a container for automatically dispensing a cleaner or disinfectant into a toilet reservoir on which such container is supported via a clip member slidable in a recess in the container base between storage and dispensing positions, the improvement wherein the slidable clip porton and the walls of such recess are provided with means locking the clip against movement when in each of such positions.

Abstract: The recovery charge of power diodes and thyristors is tailored and matched by irradiation through a major surface of the semiconductor body with a given radiation source, preferably of electron radiation, to a dosage corresponding to between about 1 .times. 10.sup.12 and 8 .times. 10.sup.12 electrons per centimeter square with 2 MeV electron radiation. Preferably, the recovery charge of each device of a group of a type of diode or thyristor is first measured, and the group divided into subgroups according to the measured recovery charge of each device. The devices of at least one subgroup is then irradiated with said given radiation source to dosages corresponding to between about 1 .times. 10.sup.12 and 8 .times. 10.sup.12 electrons per centimeter square with 2 MeV electron radiation, and the recovery charge of each irradiated device is again measured to determine the incremental change of recovery charge as a function of irradiation dosage.

Abstract: A plurality of discrete transistor devices are produced on a semiconductor wafer and isolated from one another by moat etching. A passivation layer is then deposited in the moats separating the discrete transistor devices. The semiconductor wafer is then scribed and broken along lines delineated by the moats. The disclosed method permits testing of each discrete transistor device prior to separation from the wafer.

Abstract: Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/.tau. = 1/.tau..sub.o + K.phi., where .tau. is the desired minority carrier lifetime, .tau..sub.o is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and .phi. is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage.