Abstract: An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

Abstract: A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber.

Abstract: A paper or sheet buffering system is provided which avoids having to shut down the entire system when the paper path or transport is overloaded. A rotating disk having an attached collection and dispensing finger(s) is used to pull excess sheets off the transport and hold them until it is suitable to dispense them back on to the transport.

Abstract: A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber.

Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a base portion and a rotary subsystem. The rotary subsystem comprises a first link comprising a first joint, wherein the first link is rotatably coupled to the base portion by the first joint, and a second link comprising a second joint, wherein the second link is rotatably coupled to the first link by the second joint. The first joint and the second joint are spaced a predetermined distance from one another. The second link further comprising an end effector whereon the substrate resides, and wherein the end effector is operably coupled to the second link.

Abstract: Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.

Abstract: Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.

Abstract: Dosimetry systems and methods are also presented for measuring a scanned ion beam at a plurality of points along a curvilinear path at a workpiece location in a process chamber. An illustrated dosimetry system comprises a sensor and a mounting apparatus that supports support the sensor and selectively positions the sensor at a plurality of points along the curvilinear path, wherein the mounting apparatus can selectively position the sensor to point toward a vertex of the scanned ion beam.

Abstract: Ion implantation scanning systems and methods are presented for providing ions from an ion beam to a treatment surface of a workpiece, wherein a beam is electrically or magnetically scanned in a single direction or plane and an implanted workpiece is rotated about an axis that is at a non-zero angle relative to the beam scan plane, where the workpiece rotation and the beam scanning are synchronized to provide the beam to the workpiece treatment surface at a generally constant angle of incidence.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. A scanning magnet is most preferably used to control a side to side scanning of the ion beam so that an entire implantation surface of the workpiece can be processed.

Abstract: A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a base portion and a rotary subsystem. The rotary subsystem comprises a first link comprising a first joint, wherein the first link is rotatably coupled to the base portion by the first joint, and a second link comprising a second joint, wherein the second link is rotatably coupled to the first link by the second joint. The first joint and the second joint are spaced a predetermined distance from one another. The second link further comprising an end effector whereon the substrate resides, and wherein the end effector is operably coupled to the second link.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and including an opening extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and including an opening extending through the rotation member and aligned with an opening in a wall of the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having an axis of rotation offset from an axis of rotation of the first rotation member, the second rotation member overlying the opening of the first rotation member.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel.