Abstract: Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.

Abstract: A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.

Abstract: Carbon materials and methods of manufacturing carbon materials for use in high energy devices, such as electric double layer capacitors are described. High energy devices manufactured with carbon materials contemplated herein have high energy density. Methods of manufacturing carbon materials generally include providing a carbon precursor and an additive, mixing the additive with the carbon precursor prior to curing the carbon precursor, carbonizing the carbon precursor and removing the additive to form the carbon material. Such carbon materials can be used in electric double layer capacitors.

Abstract: An activated carbon material derived, for example, by carbonizing and activating a non-lignocellulosic carbon precursor has a structural order ratio less than or equal to 0.08, and a nitrogen content greater than 0.2 wt. %. The activated carbon material can also have a volumetric capacitance greater than or equal to 70 F/cm3, an area-specific resistance less than or equal to 0.1 ohm-cm2 and/or a specific surface area greater than 300 m2/g, and is suitable to form improved carbon-based electrodes for use in high energy density devices.

Abstract: A flow-through sorbent comprising at least 30 wt % of a metal sulfide, and a binder. The sorbent may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.

Abstract: A flow-through sorbent comprising at least 30 wt % of a metal sulfide, and a binder. The sorbent may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.

Abstract: The disclosure provides a method comprising contacting a fibrous polymeric material and a carbon material to form a mixture, contacting the mixture with a liquid to form a slurry, and then forming a layer comprising the slurry. Also disclosed are layers formed from the recited methods, electrodes comprising the layers, and electrical devices comprising the layers and/or electrodes.

Abstract: The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.

Abstract: A composite comprising an inorganic substrate with a coating comprising activated carbon and a metal sulfide. The composite may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.

Abstract: An activated carbon material derived, for example, by carbonizing and activating a non-lignocellulosic carbon precursor has a structural order ratio less than or equal to 0.08, and a nitrogen content greater than 0.2 wt. %. The activated carbon material can also have a volumetric capacitance greater than or equal to 70 F/cm3, an area-specific resistance less than or equal to 0.1 ohm-cm2 and/or a specific surface area greater than 300 m2/g, and is suitable to form improved carbon-based electrodes for use in high energy density devices.

Abstract: A method for producing an activated carbon material includes forming an aqueous mixture of a natural, non-lignocellulosic carbon precursor and an inorganic compound, heating the mixture in an inert or reducing atmosphere, cooling the heated mixture to form a first carbon material, and removing the inorganic compound to produce an activated carbon material. The activated carbon material is suitable to form improved carbon-based electrodes for use in high energy density devices.

Abstract: Methods and apparatus for forming a semiconductor on glass-ceramic structure provide for: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a precursor glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer to thereby form an intermediate semiconductor on precursor glass structure; sandwiching the intermediate semiconductor on precursor glass structure between first and second support structures; applying pressure to one or both of the first and second support structures; and subjecting the intermediate semiconductor on precursor glass structure to heat-treatment step to crystallize the precursor glass resulting in the formation of a semiconductor on glass-ceramic structure.

Abstract: Plate systems and methods of using them. The plate systems may be used, for example, for the removal of metallic or semi-metallic contaminants from a fluid stream.

Abstract: A flow-through sorbent comprising at least 30 wt % of a metal sulfide, and a binder. The sorbent may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.

Abstract: The disclosure provides a method comprising contacting a fibrous polymeric material and a carbon material to form a mixture, contacting the mixture with a liquid to form a slurry, and then forming a layer comprising the slurry. Also disclosed are layers formed from the recited methods, electrodes comprising the layers, and electrical devices comprising the layers and/or electrodes.

Abstract: A composite comprising an inorganic substrate with a coating comprising activated carbon and a metal sulfide. The composite may be used, for example, for the removal of a contaminant, such as mercury, from a fluid stream.

Abstract: A ceramic honeycomb product comprising a thin-walled ceramic honeycomb structure incorporating a plurality of parallel channels bounded by thin channel walls traversing the body from a first end face to a second end face thereof; and a composite coating disposed on at least one end face of the structure comprising a powder of an abrasion-resistant ceramic dispersed in a dried siliceous matrix.

Abstract: The invention is directed to a carbon composition produced from a carbon precursor, a carbon precursor modifier, and an additive, wherein a mixture of the recited components is formed, the carbon precursor is cured, the resulting mixture carbonized to produce a porous carbon composition. Also disclosed are methods for preparing the carbon composition and for using the carbon composition to fabricate electrodes and electric double layer capacitors comprising the carbon composition.

Abstract: A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.