Abstract: A method of forming a semiconductor on glass structure includes: establishing an exfoliation layer on a semiconductor wafer; contacting the exfoliation layer of the semiconductor wafer to a glass substrate; applying pressure, temperature and voltage to the semiconductor wafer and the glass substrate, without a vacuum atmosphere, such that a bond is established therebetween via electrolysis; and applying stress such that the exfoliation layer separates from the semiconductor wafer and remains bonded to the glass substrate.

Abstract: Carbon materials and methods of manufacturing carbon materials for use in high energy devices, such as electric double layer capacitors are described. High energy devices manufactured with carbon materials contemplated herein have high energy density. Methods of manufacturing carbon materials generally include providing a carbon precursor and an additive, mixing the additive with the carbon precursor prior to curing the carbon precursor, carbonizing the carbon precursor and removing the additive to form the carbon material. Such carbon materials can be used in electric double layer capacitors.

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.