Abstract: Systems for providing isolation of a bias signal relative to a radio frequency (RF) signal in an integrated circuit, and related circuits, modules, and methods, are disclosed herein. In one example embodiment, a system includes an inductor, a bypass capacitor, and a transmission line segment, which includes first and second ends and extends between the first and second ends. The first end is at least indirectly coupled to the bypass capacitor, the second end is at least indirectly coupled to a first additional end of the inductor, and a second additional end of the inductor is configured to be coupled at least indirectly to a device through which the RF signal is being communicated. The transmission line segment is configured to impart a non-negligible phase shift to a signal communicated between the first and second ends, or is configured to have a non-negligible effective inductance.

Abstract: An amplifier module is provided. The amplifier module includes a multi-layer printed circuit board (PCB). A first power transistor die is mounted at a top surface of the multi-layer PCB. A second power transistor die is mounted at the top surface of the multi-layer PCB. An impedance inversion element is coupled between an output of the first power transistor die and an output of the second power transistor die. A combining node is formed at the output of the second power transistor die. A stub circuit including a transmission line element is coupled at the combining node.

Abstract: An amplifier module is provided. The amplifier module includes a multi-layer printed circuit board (PCB). A first power transistor die is mounted at a top surface of the multi-layer PCB. A second power transistor die is mounted at the top surface of the multi-layer PCB. An impedance inversion element is coupled between an output of the first power transistor die and an output of the second power transistor die. A combining node is formed at the output of the second power transistor die. A stub circuit including a transmission line element is coupled at the combining node.

Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

Abstract: Embodiments of a multiple-path amplifier (e.g., a Doherty amplifier) and a module housing the amplifier include a first amplifier (or first power transistor die) with a first output terminal, a second amplifier (or second power transistor die) with a second output terminal, and an impedance inverter line assembly electrically connected between the first and second output terminals. The impedance inverter line assembly includes a first transmission line and a surface mount component connected in series between the first and second output terminals. In various embodiments, the surface mount component is selected from a fixed-value capacitor, a fixed-value inductor, a tunable capacitor, a tunable inductor, and a tunable passive component network.

Abstract: A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

Abstract: An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.

Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt inductance circuit is coupled to the output of either or both of the first and/or second amplifier die. Each shunt inductance circuit at least partially resonates out the output capacitance of the amplifier die to which it is connected to enable the electrical length of the phase shift and impedance inversion element to be increased.

Abstract: A radio frequency (RF) chip capacitor circuit and structure are provided. The circuit and structure include a plurality of capacitors connected in series. Each capacitor of the plurality includes a first plate formed from a first metal layer and a second plate formed from a second metal layer. A first two adjacent capacitors of the plurality include first plates formed in a first contiguous portion of the first metal layer or second plates formed in a second contiguous portion of the second metal layer. Each capacitor of the plurality may include a dielectric layer disposed between the first plate and the second plate.

Abstract: An integrated circuit (IC) includes an input pad and an output pad separated from the input pad by a predetermined distance. A plurality of capacitors are coupled in series between the input pad and the output pad. The plurality of capacitors are distributed to substantially span the predetermined distance. An inductor is formed from a bond wire, having a first end attached at the first input pad and a second end attached at the output pad. The inductor and plurality of capacitors configured to form a predetermined open circuit resonance.

Abstract: A radio frequency (RF) chip capacitor circuit and structure are provided. The circuit and structure include a plurality of capacitors connected in series. Each capacitor of the plurality includes a first plate formed from a first metal layer and a second plate formed from a second metal layer. A first two adjacent capacitors of the plurality include first plates formed in a first contiguous portion of the first metal layer or second plates formed in a second contiguous portion of the second metal layer. Each capacitor of the plurality may include a dielectric layer disposed between the first plate and the second plate.

Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt circuit is coupled to the output of either or both of the first and/or second amplifier die. The shunt circuit includes a series coupled inductance and high-Q capacitor (e.g., a metal-insulator-metal (MIM) capacitor), and the shunt circuit is configured to at least partially resonate out the output capacitance of the amplifier die to which it is connected.

Abstract: A Doherty amplifier module includes first and second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. A phase shift and impedance inversion element is coupled between the outputs of the first and second amplifier die. A shunt inductance circuit is coupled to the output of either or both of the first and/or second amplifier die. Each shunt inductance circuit at least partially resonates out the output capacitance of the amplifier die to which it is connected to enable the electrical length of the phase shift and impedance inversion element to be increased.

Abstract: An integrated circuit (IC) includes an input pad and an output pad separated from the input pad by a predetermined distance. A plurality of capacitors are coupled in series between the input pad and the output pad. The plurality of capacitors are distributed to substantially span the predetermined distance. An inductor is formed from a bond wire, having a first end attached at the first input pad and a second end attached at the output pad. The inductor and plurality of capacitors configured to form a predetermined open circuit resonance.

Abstract: An embodiment of a Doherty amplifier module includes a substrate, a first amplifier die, and a second amplifier die. The first amplifier die includes one or more first power transistors configured to amplify, along a first signal path, a first input RF signal to produce an amplified first RF signal. The second amplifier die includes one or more second power transistors configured to amplify, along a second signal path, a second input RF signal to produce an amplified second RF signal. The first and second amplifier die each also include an elongated output pad that is configured to enable a pluralities of wirebonds to be connected in parallel along the length of the elongated output pad so that the pluralities of wirebonds extend in perpendicular directions to the first and second signal paths.