Abstract: The invention provides a plurality of polymeric particles embedded with silicate that include gas-filled polymeric microelements. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell having an outer surface and a diameter of 5 ?m to 200 ?m with silicate particles embedded in the polymer. The silicate particles have an average particle size of 0.01 to 3 ?m. The silicate-containing regions are spaced to coat less than 50 percent of the outer surface of the polymeric microelements; and less than 0.1 weight percent total of the polymeric microelements is associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric micro elements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.

Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. It includes a polymeric matrix having a polishing surface. Polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. Silicate-containing regions distributed within each of the polymeric microelements coat less than 50 percent of the outer surface of the polymeric microelements. Less than 0.1 weight percent total of the polymeric microelements are associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.

Abstract: The method provides a method of preparing a silicate-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet. The polymeric microelements have varied densities, varied wall thickness and varied particle size. Passing the gas-filled microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separates the polymeric microelements with Coanda effect, inertia and gas flow resistance. The coarse polymeric microelements from the curved wall of the Coanda block to clean the polymeric microelements. The polymeric microelements collected contain less than 0.

Abstract: The method provides a method of preparing a silicate-containing polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. The method includes introducing a feed stream of gas-filled polymeric microelements into a gas jet. The polymeric microelements have varied densities, varied wall thickness and varied particle size. Passing the gas-filled microelements in the gas jet adjacent a Coanda block, the Coanda block having a curved wall for separates the polymeric microelements with Coanda effect, inertia and gas flow resistance. The coarse polymeric microelements from the curved wall of the Coanda block to clean the polymeric microelements. The polymeric microelements collected contain less than 0.

Abstract: The invention provides a polishing pad useful for polishing at least one of semiconductor, magnetic and optical substrates. It includes a polymeric matrix having a polishing surface. Polymeric microelements are distributed within the polymeric matrix and at the polishing surface of the polymeric matrix. Silicate-containing regions distributed within each of the polymeric microelements coat less than 50 percent of the outer surface of the polymeric microelements. Less than 0.1 weight percent total of the polymeric microelements are associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric microelements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.

Abstract: The invention provides a plurality of polymeric particles embedded with silicate that include gas-filled polymeric microelements. The gas-filled polymeric microelements have a shell and a density of 5 g/liter to 200 g/liter. The shell having an outer surface and a diameter of 5 ?m to 200 ?m with silicate particles embedded in the polymer. The silicate particles have an average particle size of 0.01 to 3 ?m. The silicate-containing regions are spaced to coat less than 50 percent of the outer surface of the polymeric microelements; and less than 0.1 weight percent total of the polymeric microelements is associated with i) silicate particles having a particle size of greater than 5 ?m; ii) silicate-containing regions covering greater than 50 percent of the outer surface of the polymeric microelements; and iii) polymeric micro elements agglomerated with silicate particles to an average cluster size of greater than 120 ?m.

Abstract: A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine including an alcohol group. The cleaning solution also includes an amino acid complexing agent and an inhibitor. In a preferred embodiment, the cleaning solution has a basic pH.

Abstract: The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid/methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Abstract: The present invention provides an aqueous composition useful for CMP of a semiconductor wafer containing a metal comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.001 to 10% by weight copolymer blends of a first copolymer and a second copolymer and balance water.

Abstract: A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: A conductive polishing pad that includes one or more anodes and one or more cathodes formed at or near the polishing surface of a polishing pad. The anodes and cathodes are connected to a wiring network that is part of an electrical connector system that allows for a current source to be connected to the polishing pad and provide a current to the anodes and cathodes even if the polishing pad is moving relative to the current source. An electrolytic polishing fluid introduced between the polishing surface and the metal layer of a wafer forms an electrical circuit between the anode, cathode and the metal layer. The conductive polishing pad allows for electrochemical mechanical polishing (ECMP) to be performed on a conventional chemical mechanical polishing (CMP) tool.

Abstract: A conditioning apparatus and method for conditioning a polish pad. The conditioning apparatus has a movable conditioning arm with a disk mounting apparatus, a plurality of interchangeable conditioning disks, a disk housing or multiple disk stations capable of holding the plurality of interchangeable conditioning disks and a controller for directing and controlling the movement of said conditioning arm.

Abstract: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.

Abstract: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area.

Abstract: A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine including an alcohol group. The cleaning solution also includes an amino acid complexing agent and an inhibitor. In a preferred embodiment, the cleaning solution has a basic pH.

Abstract: A conditioning tool is useful for treating the polishing surface of a polishing pad. The tool has a base for supporting conditioning materials. The base has an abrasive section for cutting a polishing surface of the polishing pad and a polymeric section for treating the polishing surface of the polishing pad. The polymeric section is operable in a first position with only the polymeric section in contact with the polishing surface of the polishing pad and operable in a second position with the abrasive section in contact with the polishing surface of the polishing pad.

Abstract: A conditioning apparatus and method for conditioning a polish pad. The conditioning apparatus has a movable conditioning arm with a disk mounting apparatus, a plurality of interchangeable conditioning disks, a disk housing or multiple disk stations capable of holding the plurality of interchangeable conditioning disks and a controller for directing and controlling the movement of said conditioning arm.

Abstract: A system for dished metal redevelopment by providing a metal deposition solution at an interface between a moving semiconductor wafer and a moving polishing pad, which deposits metal onto dished metal in trenches in a layer of an interlayer dielectric; and by polishing the wafer with a relatively reduced polishing pressure to polish metal being deposited. A polishing fluid is disclosed for use in a CMP polishing system, the polishing fluid being a metal deposition solution for dished metal redevelopment.

Abstract: A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxide compound or an amine including an alcohol group. The cleaning solution also includes an amino acid complexing agent and an inhibitor. In a preferred embodiment, the cleaning solution has a basic pH.