Patents by Inventor Joseph R. Summa

Joseph R. Summa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8728722
    Abstract: A method for producing a device in one or more layers of patternable material disposed over a substrate uses multiple exposure tools having different resolution limits and maximum expose field sizes. An abutting field pattern is exposed and stitched in one layer of patternable material using one exposure tool and a first mask. A periphery pattern is then exposed in the same layer or in a different layer of patternable material using a second exposure tool and a second mask. The maximum expose field of the first exposure tool is smaller than a size of the device while the maximum expose field of the second exposure tool is at least as large as, or larger, the size of the device so that the combination of the stitched abutting field pattern and the periphery pattern forms a complete pattern in the patternable material.
    Type: Grant
    Filed: August 2, 2011
    Date of Patent: May 20, 2014
    Assignee: Truesense Imaging, Inc.
    Inventors: Robert P. Fabinski, Eric J. Meisenzahl, James E. Doran, Joseph R. Summa
  • Patent number: 8618458
    Abstract: A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
    Type: Grant
    Filed: November 7, 2008
    Date of Patent: December 31, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Joseph R. Summa, Cristian A. Tivarus, Todd J. Anderson, Eric G. Stevens
  • Patent number: 8471939
    Abstract: An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each pixel of the first and second arrays has a photodetector for collecting charge in response to incident light, a charge-to-voltage conversion mechanism, and a transfer gate for selectively transferring charge from the photodetector to the charge-to-voltage mechanism. The first and second sensor layers each have a thicknesses to collect light with a first and second preselected ranges of wavelengths, respectively. A circuit layer is situated below the first sensor layer and has support circuitry for the pixels of the first and second sensor layers, and interlayer connectors are between the pixels of the first and second layers and the support circuitry.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: June 25, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: Cristian A. Tivarus, John P. McCarten, Joseph R. Summa
  • Patent number: 8400537
    Abstract: An image sensor includes an array of pixels comprising a plurality of kernels that repeat periodically and each kernel includes n photosensitive regions for collecting charge in response to light, n is equal to or greater than 2; and a transparent layer spanning the photosensitive regions having n optical paths, at least two of which are different, wherein each optical path directs light of a predetermined spectral band into specific photosensitive regions.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: March 19, 2013
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Joseph R. Summa
  • Patent number: 8076746
    Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: December 13, 2011
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa, Eric G. Stevens, Hung Q. Doan, Robert M. Guidash
  • Patent number: 8054355
    Abstract: An image sensor includes a first sensor layer having a first array of pixels and a second sensor layer having a second array of pixels. Each of the pixels has an optical center. The first sensor layer is stacked over the second sensor layer such that the optical centers of the first array of pixels are offset from the optical centers of the second array to form a predetermined pattern.
    Type: Grant
    Filed: October 16, 2008
    Date of Patent: November 8, 2011
    Assignee: Omnivision Technologies, Inc.
    Inventors: John P. McCarten, Joseph R. Summa, Cristian A. Tivarus
  • Patent number: 8018016
    Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: September 13, 2011
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa, Eric G. Stevens, Hung Q. Doan, Robert M. Guidash
  • Publication number: 20110156195
    Abstract: An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical node that is associated with each unit cell on the sensor wafer. An inter-wafer interconnect is connected between each charge-to-voltage conversion region on the sensor wafer and a respective electrical node on the circuit wafer. A location of a portion of the unit cells on the sensor wafer and a location of a corresponding portion of the unit cells on the circuit wafer are shifted a predetermined distance with respect to the locations of the remaining unit cells on the sensor and circuit wafers.
    Type: Application
    Filed: December 31, 2009
    Publication date: June 30, 2011
    Inventors: Cristian A. Tivarus, John P. McCarten, Joseph R. Summa
  • Publication number: 20110156197
    Abstract: An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical node associated with each unit cell on the sensor wafer. An inter-wafer interconnect is connected between each unit cell on the sensor wafer and a respective unit cell on the circuit wafer. The location of at least a portion of the inter-wafer interconnects is shifted or disposed at a different location with respect to the location of one or both components connected to the shifted inter-wafer interconnects. The locations of the inter-wafer interconnects can be disposed at different locations with respect to the locations of the charge-to-voltage conversion regions or with respect to the locations of the electrical nodes.
    Type: Application
    Filed: December 31, 2009
    Publication date: June 30, 2011
    Inventors: Cristian A. Tivarus, John P. McCarten, Joseph R. Summa
  • Patent number: 7965329
    Abstract: An image sensor includes (a) a first wafer having (i) a photosensitive area; (ii) a charge-to-voltage conversion region; (b) a second wafer having (i) a first amplifier that receives a signal from the charge-to-voltage conversion region; (c) an electrical interconnect connecting the charge-to-voltage conversion region to an input of the amplifier; (d) an electrically biased shield at least partially enclosing at least a portion of the electrical interconnect.
    Type: Grant
    Filed: September 9, 2008
    Date of Patent: June 21, 2011
    Assignee: OmniVision Technologies, Inc.
    Inventors: John P. McCarten, Joseph R. Summa, Todd J. Anderson, Cristian A. Tivarus
  • Publication number: 20100327388
    Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 30, 2010
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa
  • Publication number: 20100327389
    Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of the first conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the first conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of a second conductivity type is disposed in the sensor layer adjacent to the frontside of the sensor layer. A distinct plurality of backside photodetectors of the second conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to the backside region. One or more or more channel regions of the second conductivity type are disposed in respective portions of the sensor layer between the frontside photodetector and the backside photodetector in each photodetector pair.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 30, 2010
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa
  • Publication number: 20100330728
    Abstract: A back-illuminated image sensor includes a sensor layer disposed between a circuit layer adjacent to a frontside of the sensor layer and a layer disposed on a backside of the sensor layer. One or more first alignment marks are formed in a layer in the circuit layer. A masking layer is aligned to the one or more first alignment marks. The masking layer includes openings that define locations for one or more second alignment marks. The one or more second alignment marks are then formed in or through the layer disposed on a backside of a sensor layer. One or more elements are formed in or on the backside of the sensor layer. The one or more elements are aligned to one or more second alignment marks.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 30, 2010
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa
  • Publication number: 20100327390
    Abstract: Back-illuminated image sensors include one or more contact implant regions disposed adjacent to a backside of a sensor layer. An electrically conductive material, including, but not limited to, a conductive lightshield, is disposed over the backside of the sensor layer. A backside well is formed in the sensor layer adjacent to the backside, and an insulating layer is disposed over the surface of the backside. Contacts formed in the insulating layer electrically connect the electrically conducting material to respective contact implant regions. At least a portion of the contact implant regions are arranged in a shape that corresponds to one or more pixel edges.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 30, 2010
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa
  • Publication number: 20100327391
    Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more regions of a second conductivity type are formed in at least a portion of the sensor layer adjacent to the frontside. The one or more regions are connected to a voltage terminal for biasing these regions to a predetermined voltage. A backside well of the second conductivity type is formed in the sensor layer adjacent to the backside. The backside well is electrically connected to another voltage terminal for biasing the backside well at a second predetermined voltage that is different from the first predetermined voltage.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 30, 2010
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa
  • Publication number: 20100327392
    Abstract: A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. An insulating layer is disposed over the backside. A circuit layer is formed adjacent to the frontside such that the sensor layer is positioned between the circuit layer and the insulating layer. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors is formed in the sensor layer contiguous to portions of the backside region of the second conductivity type.
    Type: Application
    Filed: June 26, 2009
    Publication date: December 30, 2010
    Inventors: John P. McCarten, Cristian A. Tivarus, Joseph R. Summa
  • Patent number: 7858915
    Abstract: A vertically-integrated image sensor includes a sensor wafer connected to a support circuit wafer. Each pixel region on the sensor wafer includes a photodetector, a charge-to-voltage conversion mechanism, a transfer mechanism for transferring charge from the photodetector to the charge-to-voltage conversion mechanism, and a reset mechanism for discharging the charge-to-voltage conversion mechanism. The support circuit wafer includes an amplifier and other support circuitry for each pixel region on the sensor wafer. An inter-wafer connector directly connects each charge-to-voltage mechanism on the sensor wafer to a respective gate to an amplifier on the support circuit wafer.
    Type: Grant
    Filed: March 31, 2008
    Date of Patent: December 28, 2010
    Assignee: Eastman Kodak Company
    Inventors: John P. McCarten, Joseph R. Summa, Robert M. Guidash, Todd J. Anderson
  • Patent number: 7838956
    Abstract: A back-illuminated image sensor includes a sensor layer having a frontside and a backside opposite the frontside. An insulating layer is situated adjacent the backside and a circuit layer is adjacent the frontside. A plurality of photodetectors of a first type conductivity convert light incident on the backside into photo-generated charges. The photodetectors are disposed in the sensor layer adjacent the frontside. A region of a second type conductivity is formed in at least a portion of the sensor layer adjacent the frontside and is connected to a voltage terminal for biasing the second type conductivity region at a predetermined voltage. A well of the second type conductivity is formed in the sensor layer adjacent the backside. Trench isolations in the sensor layer start at the frontside and extend beyond the depletion region of the photodiodes.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: November 23, 2010
    Assignee: Eastman Kodak Company
    Inventors: John P. McCarten, Joseph R. Summa, Cristian A. Tivarus
  • Patent number: 7830440
    Abstract: An image sensor includes at least first and second photo-sensitive regions; a color filter array having at least two different colors that selectively absorb specific bands of wavelengths, and the two colors respectively span portions of predetermined photo-sensitive regions; and wherein the two photo sensitive regions are doped so that electrons that are released at two different depths in the substrate are collected in two separate regions of the photo sensitive regions so that, when wavelengths of light pass through the color filter array, light is absorbed by the photo sensitive regions which photo sensitive regions consequently releases electrons at two different depths of the photo sensitive regions and are stored in first and second separate regions; at least two charge-coupled devices adjacent the first photo sensitive regions; and a first transfer gate associated with the first photo sensitive region that selectively passes charge at first and second levels which, when at the first level, causes the
    Type: Grant
    Filed: July 7, 2008
    Date of Patent: November 9, 2010
    Assignee: Eastman Kodak Company
    Inventors: Joseph R. Summa, Herbert J. Erhardt
  • Patent number: 7807514
    Abstract: A method of forming a charge-coupled device including the steps of forming well or substrate of a first conductivity type; a buried channel of a second conductivity type; a plurality of first gate electrodes; partially coating the first gate electrodes with a mask substantially aligned to an edge of the first gate electrodes; implanting ions of the first conductivity type of sufficient energy to penetrate the first gates and into the buried channel; and a plurality of second gate electrodes covering regions each over the buried channel between the first gate electrodes.
    Type: Grant
    Filed: April 26, 2006
    Date of Patent: October 5, 2010
    Assignee: Eastman Kodak Company
    Inventors: Christopher Parks, John P. McCarten, Joseph R. Summa