Abstract: A method for creating a pattern on a substrate, the method includes the steps of imprinting a first pattern on the substrate; and imprinting a second substantially similar pattern which is mis-registered with regard to the first pattern so that the combination of the first and second patterns cause a systematic variation in a final size of defined elements across the substrate.

Abstract: An image sensor includes (a) a plurality of pixels each having (i) a plurality of photosensitive areas having a first sensitivity to light for forming a first sensitivity area; (ii) a plurality of charge-coupled devices respectively adjacent the photosensitive areas having a second sensitivity to light for forming a second sensitivity area; wherein the second sensitivity area is less sensitive to light than the first sensitivity area so that the second sensitivity area saturates after the first sensitivity area saturates; (iii) a first transfer mechanism for permitting electrons to be passed from the first sensitivity area to the second sensitivity area; and (b) a second transfer mechanism for moving electrons through the plurality of charge-coupled devices.

Abstract: A method of manufacturing a charge-coupled device, the method includes the steps of providing a substrate; covering the substrate with a single gate dielectric or a gate dielectric stack; covering the dielectric with a conducting material; depositing a second dielectric on the conducting material; etching the second dielectric and the conducting material in selected regions; depositing a third dielectric on the both the etched away and non-etched away regions; etching the third dielectric such that a portion of the third dielectric remains on a sidewall of the etched away portions which forms a gap region; and depositing a second conducting material in the gap region.

Abstract: An image sensor includes (a) a plurality of pixels each having (i) a plurality of photosensitive areas having a first sensitivity to light for forming a first sensitivity area; (ii) a plurality of charge-coupled devices respectively adjacent the photosensitive areas having a second sensitivity to light for forming a second sensitivity area; wherein the second sensitivity area is less sensitive to light than the first sensitivity area so that the second sensitivity area saturates after the first sensitivity area saturates; (iii) a first transfer mechanism for permitting electrons to be passed from the first sensitivity area to the second sensitivity area; and (b) a second transfer mechanism for moving electrons through the plurality of charge-coupled devices.

Abstract: A method of manufacturing an image sensor, the method comprises the steps providing a substrate having a gate insulating layer abutting a portion of the substrate; depositing a silicon layer on the gate insulating layer; creating a plurality of openings in the deposited silicon layer for forming a plurality of etched deposited silicon; growing an oxide on first surfaces of the etched deposited silicon which first surfaces initially form a boundary for the openings; coating photoresist in the plurality of openings between the first surfaces of the oxidized silicon; and exposing the photoresist for removing the photoresist which overlies the silicon and retains a portion of the photoresist in the openings and on the first surface of the oxidized silicon.

Abstract: A method of manufacturing an image sensor, the method comprises the steps providing a substrate having a gate insulating layer abutting a portion of the substrate; depositing a silicon layer on the gate insulating layer; creating a plurality of openings in the deposited silicon layer for forming a plurality of etched deposited silicon; growing an oxide on first surfaces of the etched deposited silicon which first surfaces initially form a boundary for the openings; coating photoresist in the plurality of openings between the first surfaces of the oxidized silicon; and exposing the photoresist for removing the photoresist which overlies the silicon and retains a portion of the photoresist in the openings and on the first surface of the oxidized silicon.

Abstract: An image sensor comprises an array of pixels for collecting incident light and converting the light into an electrical charge; a color filter array having a plurality of colored filters positioned adjacent to the pixels for selectively transmitting specific spectral bands of light to the pixels; and a plurality of lenses positioned adjacent to individual pixels wherein the lenses positioned adjacent a first color of the colored filters are substantially larger in size than lenses adjacent a second color, such that a greater proportion of the incident light is focused onto the pixel adjacent the first color of the colored filter.