Abstract: A system and method for modulating optogenetic vagus neurons in a noninvasive and transcutaneous manner is disclosed. The system and method comprises a two-dimensional array of organic light emitting diodes (OLEDs), a voltage-generating unit, a control unit, and a feedback loop. The array is placed on a subject's outer ear. Because the array is flexible, it can be closely placed on the skin of the outer ear. The array can deliver optical therapy and monitor heart rate variability (HRV) of the subject simultaneously, and the pixels of the array can be individually addressed. The voltage-generating unit generates pulsed voltage to the OLEDs. The control unit is connected to the array and controls the array and therapeutic patterns. The feedback loop uses the HRV to identify the therapeutic patterns.

Abstract: A system and method for modulating optogenetic vagus neurons in a noninvasive and transcutaneous manner is disclosed. The system and method comprises a two-dimensional array of organic light emitting diodes (OLEDs), a voltage-generating unit, a control unit, and a feedback loop. The array is placed on a subject's outer ear. Because the array is flexible, it can be closely placed on the skin of the outer ear. The array can deliver optical therapy and monitor heart rate variability (HRV) of the subject simultaneously, and the pixels of the array can be individually addressed. The voltage-generating unit generates pulsed voltage to the OLEDs. The control unit is connected to the array and controls the array and therapeutic patterns. The feedback loop uses the HRV to identify the therapeutic patterns.

Abstract: A system and method for modulating optogenetic vagus neurons in a noninvasive and transcutaneous manner is disclosed. The system and method comprises a two-dimensional array of organic light emitting diodes (OLEDs), a voltage-generating unit, a control unit, and a feedback loop. The array is placed on a subject's outer ear. Because the array is flexible, it can be closely placed on the skin of the outer ear. The array can deliver optical therapy and monitor heart rate variability (HRV) of the subject simultaneously, and the pixels of the array can be individually addressed. The voltage-generating unit generates pulsed voltage to the OLEDs. The control unit is connected to the array and controls the array and therapeutic patterns. The feedback loop uses the HRV to identify the therapeutic patterns.

Abstract: A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).

Abstract: Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Abstract: Some embodiments include an imaging system. The image sensor array includes multiple image sensor sheets configured in an array grid. Each image sensor sheet of the multiple image sensor sheets can include a flexible substrate layer, and the flexible substrate layer can include a first flexible substrate side and a second flexible substrate side opposite the first flexible substrate side. Meanwhile, each image sensor sheet of the multiple sensor sheets can include multiple image sensors over the first flexible substrate side, the multiple image sensors can include multiple flat panel image detectors configured in a sheet grid, and the image sensor array can include an approximately constant pixel pitch. Other embodiments of related systems and methods are also disclosed.

Abstract: A wearable biomedical device manufactured with a flat-panel display technology is provided. The device comprises flexible thin-film layers and a flexible substrate. The layers are laid on the substrate and contain a flexible two-dimensional array of organic light emitting diodes (OLEDs) and photodiodes. This array is connected to an external controller wirelessly or by wire, and the controller controls the pattern of activated OLEDs and photodiodes.

Abstract: A system and method for modulating optogenetic vagus neurons in a noninvasive and transcutaneous manner is disclosed. The system and method comprises a two-dimensional array of organic light emitting diodes (OLEDs), a voltage-generating unit, a control unit, and a feedback loop. The array is placed on a subject's outer ear. Because the array is flexible, it can be closely placed on the skin of the outer ear. The array can deliver optical therapy and monitor heart rate variability (HRV) of the subject simultaneously, and the pixels of the array can be individually addressed. The voltage-generating unit generates pulsed voltage to the OLEDs. The control unit is connected to the array and controls the array and therapeutic patterns. The feedback loop uses the HRV to identify the therapeutic patterns.

Abstract: Some embodiments include an imaging system. The imaging system includes an active matrix pixel array having a flexible substrate and a pixel. The pixel includes a transistor over the flexible substrate, and the transistor includes multiple active layers having a first active layer and a second active layer over the first active layer. Further, the active matrix pixel array also includes a photodiode over the transistor, and the photodiode includes an N-type layer over the transistor, an I layer over the N-type layer, and a P-type layer over the I layer. Meanwhile, the imaging system also includes a flexible scintillator layer over the active matrix pixel array. Other embodiments of related systems and methods are also disclosed.

Abstract: A flexible ion-selective field effect transistor (ISFET) and methods of making the same are disclosed. The methods may comprise: (a) attaching a flexible substrate to a rigid support with an adhesive; (b) forming an ion-selective field effect transistor structure on a surface of the flexible substrate; and (c) removing the flexible substrate from the rigid support after step (b).

Abstract: Some embodiments include an imaging system. The image sensor array includes multiple image sensor sheets configured in an array grid. Each image sensor sheet of the multiple image sensor sheets can include a flexible substrate layer, and the flexible substrate layer can include a first flexible substrate side and a second flexible substrate side opposite the first flexible substrate side. Meanwhile, each image sensor sheet of the multiple sensor sheets can include multiple image sensors over the first flexible substrate side, the multiple image sensors can include multiple flat panel image detectors configured in a sheet grid, and the image sensor array can include an approximately constant pixel pitch. Other embodiments of related systems and methods are also disclosed.

Abstract: An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.

Abstract: A high-efficiency lateral multi-junction solar cell (C) includes ultra-low profile planar spectral band splitting micro-optics having a shortpass filter (48) reflecting desired frequencies of light (24) to a reflective mirror (58) combined with spectrally optimized photovoltaic (solar) cells.

Abstract: An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.

Abstract: One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.

Abstract: A coiled camera includes a coiling layer, a circuit device layer, active microelectronic circuitry fabricated on the circuit device layer, a semiconductor imaging device electronically coupled to the active microelectronic circuitry and a lens coupled to the semiconductor imaging device.

Abstract: A high-efficiency lateral multi-junction solar cell (C) includes ultra-low profile planar spectral band splitting micro-optics having a shortpass filter (48) reflecting desired frequencies of light (24) to a reflective mirror (58) combined with spectrally optimized photovoltaic (solar) cells.

Abstract: In one embodiment, the disclosure relates to a low-power semiconductor switching device, having a substrate supporting thereon a semiconductor body; a source electrode coupled to the semiconductor body at a source interface region; a drain electrode coupled to the semiconductor body at a drain interface region; a gate oxide film formed over a region of the semiconductor body, the gate oxide film interfacing between a gate electrode and the semiconductor body; wherein at least one of the source interface region or the drain interface region defines a sharp junction into the semiconductor body.

Abstract: The disclosure relates to a Point Cooler based on a combination of principles, including large area, low current density PN junction cooling, and electron emission from heavily doped shallowly-depleted P tips. Using Junction Cooling rather than thermoelectric cooling enables an all silicon device to be made that favorably competes with the commercial thermoelectric cooling systems. Theoretical values of THOT/TCOLD of 6 or more (in contrast to about 1.5 for other solid state refrigerators) predict this single-stage solid state vacuum electronic cooler can approach 50K at light loading, significantly lower than conventional Bismuth Telluride based thermo electrics. The high Z values for PN junction cooling with wire connection and Tunnel heat extraction opens up solid state vibration-less form fit and function replacement cooling.