Abstract: An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.

Abstract: Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.

Abstract: An electrochemical cell is described that includes (a) a first electrode; (b) a second electrode; and (c) a channel contiguous with at least a portion of the first and the second electrodes. When a first liquid is contacted with the first electrode, a second liquid is contacted with the second electrode, and the first and the second liquids flow through the channel, a parallel laminar flow is established between the first and the second liquids. Electronic devices containing such electrochemical cells and methods for their use are also described.

Abstract: Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

Abstract: Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.

Abstract: Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

Abstract: Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

Abstract: A thermally compensated tube scanner scanning tunneling microscope utilizes two concentric piezoelectric tubes, one for scanning and one for coarse translation as well as fine adjustment of sample position while in tunneling range. There are no mechanical components such as springs, levers, gears, or stepper motors which are known to result in considerable vibration sensitivity and thermal drift. Consequently, the standard mode of atomic resolution operation for the device is without vibration isolation and with a thermal drift of less than 1 angstrom per hour.