Abstract: An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R1, R2; Ra and Rb are as provided herein; optionally, R1 and R2 can be taken together form a 5- to 7-membered ring; optionally, one of R11 to R13 can be taken together with R1 to form a 5- to 7-membered ring; wherein Ra and Rb optionally may be taken together to form a 5- to 7-membered ring; wherein one of Ra or Rb optionally may be taken together with R2 to form a 5- to 7-membered ring; and when X is O, Ra and Rb are absent.

Abstract: Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: R5 independently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; R6 represents linear, branched or cyclic C1 to C20 fluoroalkyl; R7 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L3 represents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

Abstract: An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R1, R2; Ra and Rb are as provided herein; optionally, R1 and R2 can be taken together form a 5- to 7-membered ring; optionally, one of R11 to R13 can be taken together with R1 to form a 5- to 7-membered ring; wherein Ra and Rb optionally may be taken together to form a 5- to 7-membered ring; wherein one of Ra or Rb optionally may be taken together with R2 to form a 5- to 7-membered ring; and when X is O, Ra and Rb are absent.

Abstract: A polymer including a first repeating unit comprising an acid labile group; an anionic endgroup selected from a carboxylate group or a sulfamate group; and an organic cation.

Abstract: New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Abstract: A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; R1 is hydrogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C2-30 alkynyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C3-30 heteroaryl, or substituted or unsubstituted C4-30 heteroarylalkyl; and R2 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2

Abstract: Photoresist compositions comprise: an acid-sensitive polymer comprising a repeating unit comprising an ester acetal group, wherein the acid-sensitive polymer is free of tertiary alkyl ester groups and is substantially free of aromatic groups; a material comprising a base-labile group; a photoacid generator compound that is free of fluorine which generates an acid having a pKa of -2 or greater, and wherein the photoresist composition is free of photoacid generators that generate an acid having a pKa of less than -2; and a solvent.. The photoresist compositions and pattern formation methods using the photoresist compositions find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

Abstract: A photoresist composition, comprising: a polymer comprising: a first repeating unit derived from a first monomer comprising a substituted lactone, wherein the first repeating unit comprises a lactone ring derived from the substituted lactone, and wherein a carbon atom of the lactone ring forms a part of a backbone of the polymer, and a second repeating unit derived from a second monomer comprising an acetal group; a photoacid generator; and a solvent.

Abstract: A photoresist composition, comprising a first polymer comprising a first repeating unit comprising an acid-labile group, and a second polymer comprising a repeating unit derived from one or more monomers of formula (4); a photoacid generator; and a solvent, wherein Z1, Z2, R1, R2, and L are as described herein, and P is a polymerizable group.

Abstract: A topcoat composition, comprising a polymer comprising a repeating unit derived from one or more monomers of formula (1); and a solvent, wherein Z1, Z2, R1, R2, and L are as described herein, and P is a polymerizable group.

Abstract: A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, the photoresist underlayer formed from a composition including a polymer having a glass transition temperature of less than 110° C. and a solvent; subjecting the photoresist underlayer to a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

Abstract: A method of forming a pattern on a substrate, the method including: forming a photoresist underlayer over a surface of the substrate, wherein the photoresist underlayer is formed from a composition comprising a polymer and a solvent, and the photoresist underlayer has a carbon content of greater than 47 at %; subjecting the photoresist underlayer to a a metal precursor, where the metal precursor infiltrates a free volume of the photoresist underlayer; and exposing the metal precursor-treated photoresist underlayer to an oxidizing agent to provide a metallized photoresist underlayer.

Abstract: A photoresist underlayer composition comprising a poly(arylene ether); an additive of formula (14): D-(L1-Ar—[X]n)m??(14); and a solvent, wherein, in formula (14), D is a substituted or unsubstituted C1-60 organic group, optionally wherein D is an organic acid salt of the substituted or unsubstituted C1-60 organic group; each L1 is independently a single bond or a divalent linking group, when L1 is a single bond, D may be a substituted or unsubstituted C3-30 cycloalkyl or substituted or unsubstituted C1-20 heterocycloalkyl that is optionally fused with Ar, each Ar is independently a monocyclic or polycyclic C5-60 aromatic group, each X is independently —OR30, —SR31, or —NR32R33, m is an integer of 1 to 6, each n is independently an integer of 0 to 5, provided that a sum of all n is 2 or greater, and R30 to R33 are as provided herein.

Abstract: Photoresist compositions comprise: an acid-sensitive polymer comprising a first repeating unit formed from a first free radical polymerizable monomer comprising an acid-decomposable group and a second repeating unit formed from a second free radical polymerizable monomer comprising a carboxylic acid group; a compound comprising two or more enol ether groups, wherein the compound is different from the acid-sensitive polymer; a material comprising a base-labile group; a photoacid generator; and a solvent. The photoresist compositions and pattern formation methods using the photoresist compositions find particular use in the formation of fine lithographic patterns in the semiconductor manufacturing industry.

Abstract: A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; R1 is hydrogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C2-30 alkynyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C3-30 heteroaryl, or substituted or unsubstituted C1-30 heteroarylalkyl; and R2 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2

Abstract: An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R1, R2; Ra and Rb are as provided herein; optionally, R1 and R2 can be taken together form a 5- to 7-membered ring; optionally, one of R11 to R13 can be taken together with R1 to form a 5- to 7-membered ring; wherein Ra and Rb optionally may be taken together to form a 5- to 7-membered ring; wherein one of Ra or Rb optionally may be taken together with R2 to form a 5- to 7-membered ring; and when X is O, Ra and Rb are absent.

Abstract: Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Abstract: A resist underlayer composition including a polymer having a polymer backbone and a substituted or unsubstituted fullerene group pendant to the polymer backbone, and a solvent in an amount of from 50 to 99.9 weight % based on the total resist underlayer composition.

Abstract: Disclosed herein is a polymer comprising a first repeat unit and a second repeat unit, where the first repeat unit contains an acid labile group and where the second repeat unit has the structure of formula (1): wherein R1, R2 and R3 are each independently hydrogen, a halogen, a substituted or unsubstituted C1 to C12 alkyl group or C3 to C12 cycloalkyl group optionally containing an ether group, a carbonyl group, an ester group, a carbonate group, an amine group, an amide group, a urea group, a sulfate group, a sulfone group, a sulfoxide group, an N-oxide group, a sulfonate group, a sulfonamide group, or a combination thereof, a substituted or unsubstituted C6 to C14 aryl group, or C3 to C12 heteroaryl group, wherein the substitution is halogen, hydroxyl, cyano, nitro, C1 to C12 alkyl group, C1 to C12 haloalkyl group, C1 to C12 alkoxy group, C3 to C12 cycloalkyl group, amino, C2-C6 alkanoyl, carboxamido, a substituted or unsubstituted C6 to C14 aryl group, or C3 to C12 heteroaryl group; wherein R1 and R2

Abstract: A resist underlayer composition including a polyarylene ether, an additive polymer that is different from the polyarylene ether, and a solvent, wherein the additive polymer includes an aromatic or heteroaromatic group having at least one protected or free functional group selected from hydroxy, thiol, and amino.