Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.

Abstract: A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.

Abstract: A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.

Abstract: A method of operating a nonvolatile memory device includes precharging bit lines coupled to strings, supplying a first verification voltage to a selected word line and supplying a pass voltage to word lines other than the selected word line, supplying a first sense pulse to switching elements coupled between the bit lines and sense nodes and detecting memory cells, each having a threshold voltage higher than the first verification voltage, supplying a second verification voltage higher than the first verification voltage to the selected word line and supplying the pass voltage to the word lines other than the selected word line, and supplying a second sense pulse to the switching elements and detecting memory cells, each having a threshold voltage higher than the second verification voltage.

Abstract: A system on a chip (SoC) device verification system comprises: an SoC device model including one or more IPs and a memory controller; an external IP verification model receiving an instruction from the SoC device model and verifying operation of the one or more IPs included in the SoC device model; and a bus select model selecting one of the external IP verification model and an external device in response to a memory control signal received from the memory controller of the SoC device model.

Abstract: The present invention relates to a phosphate-based acrylate crosslinking agent for polymer electrolyte and a polymer electrolyte composition comprising the phosphate-based acrylate crosslinking agent, and in particular to a phosphate-based acrylate crosslinking agent where a phosphate-based compound is introduced with a polyalkylene oxide group and an acrylate group and a polymer electrolyte composition comprising the phosphate-based acrylate crosslinking agent. The polymer electrolyte composition can be applied to electrolyte thin film and polymer electrolyte of small and large capacity lithium-polymer secondary battery due to its superior ionic conductivity and electrochemical and thermal stability, where the physical properties of electrolyte composition may be controlled by means of the length of polyalkylene oxide of the crosslinking agent.

Abstract: The present invention relates to a cyclic siloxane-based compound and a solid polymer electrolyte composition containing the same as a crosslinking agent. The cyclic siloxane-based compound having a novel structure in which polyalkylene oxide acrylate groups are introduced into a cyclic siloxane compound and a solid polymer electrolyte composition containing the cyclic siloxane-based compound as a crosslinking agent along with other electrolyte components such as a plasticizer, lithium salt and a curing initiator. Since the solid polymer electrolyte composition of the present invention improves ion conductivity and electrochemical stability at room temperature, it can be useful as polymer electrolyte for electrolyte films, small-sized to high-capacity lithium-polymer secondary batteries, etc. Also, physical properties of the polymer electrolyte can be controlled easily by controlling the length of the polyalkylene oxide group in the cyclic siloxane-based crosslinking agent.

Abstract: Disclosed is a method for transmitting a signal in a mobile communications system using a plurality of transmit/receive antennas. A method for transmitting a signal in accordance with an embodiment of the present invention comprises the steps of: a receiving end's calculating a signal to interference noise ratio (SINR) with respect to every antenna pairs configuring STTD pairs to be transmittable from a transmitting end; feedbacking information indicating an antenna pair having the greatest SINR to the transmitting end; and the transmitting end's performing a D-STTD transmission through the antenna pair determined by the feedbacked information.

Abstract: The present invention is directed to the use of complementary or combination lesion-directed therapy, such as cryosurgery, and field-directed therapy, such as low dose imiquimod topical therapy with short durations, in combination to treat actinic keratosis (“AK”). In carrying out the present invention, the lesion-directed and field-directed therapies may be applied sequentially or concomitantly, in accordance with the present invention. The novel complementary or combination AK therapy contemplated by the present invention: (1) significantly improves clearance of cryosurgery-treated Aks; (2) treats subclinical AK lesions; (3) treats those visible AK lesions in excess of that cryosurgery can actually treat in a single treatment due to, e.g., patient tolerance, provider treatment limits and/or cryosurgery cost to the patient; and (4) enhances sustained clearance overall, as compared to mono AK lesion-directed therapy.

Abstract: A method of operating a nonvolatile memory device includes precharging bit lines coupled to strings, supplying a first verification voltage to a selected word line and supplying a pass voltage to word lines other than the selected word line, supplying a first sense pulse to switching elements coupled between the bit lines and sense nodes and detecting memory cells, each having a threshold voltage higher than the first verification voltage, supplying a second verification voltage higher than the first verification voltage to the selected word line and supplying the pass voltage to the word lines other than the selected word line, and supplying a second sense pulse to the switching elements and detecting memory cells, each having a threshold voltage higher than the second verification voltage.

Abstract: A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.

Abstract: A monitoring pattern for detecting a defect in a semiconductor device allows a voltage contrast inspection which may be verified by an electrical test where no special test pattern is required for the electrical test. The monitoring pattern includes a test pattern with line shapes arranged in parallel and spaced apart at predetermined linewidths and intervals, and an interconnection layer connected to the test pattern, where the test pattern is adapted to be charged with a specific potential to be displayed as a voltage contrast image when scanned with an electron beam.

Abstract: A test pattern includes a normal pattern, an abnormal pattern having predetermined defects, and a conductive line electrically connected to the normal pattern and electrically isolated from the abnormal pattern. Thus, a non-contact test process and a contact test process may be compatible with the single test pattern.

Abstract: A system on a chip (SoC) device verification system comprises: an SoC device model including one or more IPs and a memory controller; an external IP verification model receiving an instruction from the SoC device model and verifying operation of the one or more IPs included in the SoC device model; and a bus select model selecting one of the external IP verification model and an external device in response to a memory control signal received from the memory controller of the SoC device model.

Abstract: The present invention relates to a phosphate-based acrylate crosslinking agent for polymer electrolyte and a polymer electrolyte composition comprising the phosphate-based acrylate crosslinking agent, and in particular to a phosphate-based acrylate crosslinking agent where a phosphate-based compound is introduced with a polyalkylene oxide group and an acrylate group and a polymer electrolyte composition comprising the phosphate-based acrylate crosslinking agent. The polymer electrolyte composition can be applied to electrolyte thin film and polymer electrolyte of small and large capacity lithium-polymer secondary battery due to its superior ionic conductivity and electrochemical and thermal stability, where the physical properties of electrolyte composition may be controlled by means of the length of polyalkylene oxide of the crosslinking agent.