Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a styrene-based block). The SAP comprises a hydrophobic fluorinated first repeat unit and a non-fluorinated second repeat unit bearing at least one pendent OH group present as an alcohol or acid (e.g., carboxylic acid). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

Abstract: Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.

Abstract: A multimodal polyethylene polymer having an MFR2 of 0.05 to 10.0 g/10 min, a density of 940 kg/m3 or more, a tensile modulus of 900 MPa or more wherein Formula (I).

Abstract: The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B.

Abstract: Hybrid pre-patterns were prepared for directed self-assembly of a given block copolymer capable of forming a lamellar domain pattern. The hybrid pre-patterns have top surfaces comprising independent elevated surfaces interspersed with adjacent recessed surfaces. The elevated surfaces are neutral wetting to the domains formed by self-assembly. Material below the elevated surfaces has greater etch-resistance than material below the recessed surfaces in a given etch process. Following other dimensional constraints of the hybrid pre-pattern described herein, a layer of the given block copolymer was formed on the hybrid pre-pattern. Self-assembly of the layer produced a lamellar domain pattern comprising self-aligned, unidirectional, perpendicularly oriented lamellae over the elevated surfaces, and parallel and/or perpendicularly oriented lamellae over recessed surfaces. The domain patterns displayed long range order along the major axis of the pre-pattern.

Abstract: A film layer comprising a high-chi (?) block copolymer for self-assembly and a hexafluoroalcohol-containing surface active polymer (SAP) was prepared on a substrate surface that was neutral wetting to the domains of the self-assembled block copolymer. The block copolymer comprises at least one polycarbonate block and at least one other block (e.g., a substituted or unsubstituted styrene-based block). The film layer, whose top surface has contact with an atmosphere, self-assembles to form a lamellar or cylindrical domain pattern having perpendicular orientation with respect to the underlying surface. Other morphologies (e.g., islands and holes of height 1.0Lo) were obtained with films lacking the SAP. The SAP is preferentially miscible with, and lowers the surface energy of, the domain comprising the polycarbonate block.

Abstract: An orientation control layer (OCL) for self-assembly of block copolymers comprises a random copolymer comprising a first repeat unit having an ethylenic backbone functional group and a side chain aromatic ring, a second repeat unit comprising an ethylenic backbone functional group and a side chain polycarbonate, and a third repeat unit comprising an ethylenic backbone functional group and a side chain ester or amide bearing an active group capable of forming a covalent bond with a substrate surface (e.g., a silicon wafer). The OCLs are neutral wetting to block copolymers having a high Flory-Huggins interaction parameter chi (?) (“high-chi” block copolymers) such as a block copolymer comprising a polystyrene block and a polycarbonate block. The neutral OCL wetting properties allow for formation of lamellar domain patterns of the self-assembled high-chi block copolymers to be oriented perpendicular to the OCL surface.

Abstract: Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.

Abstract: A multimodal polyethylene polymer having an MFR2 of 0.05 to 10.0 g/10 min, a density of 940 kg/m3 or more, a tensile modulus of 900 MPa or more wherein Formula (I).

Abstract: Methods and computer program products for designing topographic patterns for directing the formation of self-assembled domains at specified locations on substrates. The methods include generating mathematical models that operate on mathematical descriptions of the number and locations of cylindrical self-assembled domains in a mathematical description of a guiding pattern.

Abstract: A method for processing a structure. The structure is formed and includes a substrate, a substructure having a sidewall and disposed on the substrate, a first polymer structure disposed on the substrate, and a second polymer structure disposed on the substrate such that the first polymer structure is disposed between the sidewall and the second polymer structure. An aspect ratio of the first polymer structure, the second polymer structure, or both is reduced in a reducing step. One polymer structure (i.e., the first polymer structure or the second polymer structure) is selectively removed from the structure such that a remaining polymer structure (i.e., the second polymer structure or the first polymer structure) remains disposed on the external surface of the substrate after the one polymer structure has been selectively removed, wherein the aspect ratio of the remaining polymer structure was reduced in the reducing step.

Abstract: Block polymers are formed by ring opening polymerization (ROP) of a cyclic carbonate monomer using a polymeric initiator for the ROP that comprises repeating functionalized ethylene units. The block polymers are free of, or substantially free of, any polymer having a chemical structure that does not comprise the polymer backbone of the polymeric initiator. The block polymers are capable of directed self-assembly.

Abstract: A method of orienting microphase-separated domains is disclosed, comprising applying a composition comprising an orientation control component, and a block copolymer assembly component comprising a block copolymer having at least two microphase-separated domains in which the orientation control component is substantially immiscible with the block copolymer assembly component upon forming a film; and forming a compositionally vertically segregated film on the surface of the substrate from the composition. The orientation control component and block copolymer segregate during film forming to form the compositionally vertically-segregated film on the surface of a substrate, where the orientation control component is enriched adjacent to the surface of the compositionally segregated film adjacent to the surface of the substrate, and the block copolymer assembly is enriched at an air-surface interface.

Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.

Abstract: A method of using sequence of antagomiR for developing medicine for inhibiting oral cancer cells from spreading is provided with the steps of combining a sequence of antagomiR with active ingredient to prepare a medicine which is configured to administer to oral cavity grown with oral cancer cells so that both miR-196a and miR-196b of the sequence of antagomiR are configuring of developing medicine for curing oral cancer cells. The miR-196a has a sequence of 5?-UAGGUAGUUUCAUGUUGUUGGG-3?(SEQ.ID.NO.1). The miR-196b has a sequence of 5?-UAGGUAGUUUCCUGUUGUUGGG-3?(SEQ.ID.NO.2).

Abstract: A chemical pattern layer including an orientation control material and a prepattern material is formed over a substrate. The chemical pattern layer includes alignment-conferring features and additional masking features. A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component is removed selective to a second polymeric block component by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.

Abstract: A method of preparing particles comprises forming by optical lithography a topographic template layer disposed on a surface of a substrate, which is suitable for spin casting. The template layer comprises a non-crosslinked template polymer having a pattern of independent wells therein for molding independent particles. Spin casting a particle-forming composition onto the template layer forms a composite layer comprising the template polymer and the particles disposed in the wells. The composite layer is removed from the substrate using a stripping agent that dissolves the template polymer without dissolving the particles. The particles are then isolated.

Abstract: A method and a computer system for designing an optical photomask for forming a prepattern opening in a photoresist layer on a substrate wherein the photoresist layer and the prepattern opening are coated with a self-assembly material that undergoes directed self-assembly to form a directed self-assembly pattern. The methods includes: generating a mask design shape from a target design shape; generating a sub-resolution assist feature design shape based on the mask design shape; using a computer to generate a prepattern shape based on the sub-resolution assist feature design shape; and using a computer to evaluate if a directed self-assembly pattern of the self-assembly material based on the prepattern shape is within specified ranges of dimensional and positional targets of the target design shape on the substrate.

Abstract: Methods are disclosed for reducing the number of defects in a directed self-assembled structure formed on a guiding pre-pattern (e.g., a chemical pre-pattern) on a substrate. A first layer comprising a first self-assembly material is applied onto the guiding pre-pattern, with the first self-assembly material forming domains whose alignment and orientation are directed by the guiding pre-pattern; as a result, a first self-assembled structure is formed. The first self-assembled structure is washed away, and a second layer comprising a second self-assembly material is then applied. The second self-assembly material forms a second self-assembled structure having fewer defects than the first self-assembled structure.

Abstract: Methods are disclosed for forming a layered structure comprising a self-assembled material. An initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising a non-crosslinked treated photoresist. The treated photoresist is insoluble in an organic solvent suitable for casting a material capable of self-assembly. A solution comprising the material capable of self-assembly dissolved in the organic solvent is casted on the treated layer, and the organic solvent is removed. The casted material is allowed to self-assemble with optional heating and/or annealing, thereby forming the layered structure comprising the self-assembled material. The treated photoresist can be removed using an aqueous base and/or a second organic solvent.