Abstract: An antenna for an implantable medical device (IMD) is provided including a monolithic structure derived from a plurality of discrete dielectric layers having an antenna embedded within the monolithic structure. Superstrate dielectric layers formed above the antenna may provide improved matching gradient with the surrounding environment to mitigate energy reflection effects. A outermost biocompatible layer is positioned over the superstrates as an interface with the surrounding environment. A shielding layer is positioned under the antenna to provide electromagnetic shielding for the IMD circuitry. Substrate dielectric layers formed below the antenna may possess higher dielectric values to allow the distance between the antenna and ground shielding layer to be minimized. An electromagnetic bandgap layer may be positioned between the antenna and the shielding layer.

Abstract: An antenna for an implantable medical device (IMD) is provided including a monolithic structure derived from a plurality of discrete dielectric layers having an antenna embedded within the plurality of dielectric layers. The antenna includes antenna portions formed within different layers of the monolithic structure with at least one conductive via formed to extend through the dielectric layers in order to provide a conductive pathway between the portions of the antenna formed on different layers, such that an antenna is formed that extends between different vertical layers. The dielectric layers may comprise layers of ceramic material that can be co-fired together with the antenna to form a hermetically sealed monolithic antenna structure. The antenna embedded within the monolithic structure can be arranged to have a substantially spiral, helical, fractal, meandering or planer serpentine spiral shape.

Abstract: An antenna for an implantable medical device (IMD) is provided that is formed on the same substrate as the telemetry circuitry for the IMD. The telemetry circuitry is formed on a portion of the substrate within the interior of a housing for the IMD, while at least one antenna is formed on an exterior portion of the substrate on the exterior of the housing to allow for far field telemetry. At least one electrical interconnect is formed on the substrate for connecting the antenna to the telemetry circuitry, where the electrical interconnect may comprise a controlled impedance line to minimize loss. A conformally-shaped hermetic cover, such as a ceramic material, may be formed in a desired shape around the exterior portion of the substrate and antenna and cofired together to form a monolithic structure encasing the antenna and exterior portion of the substrate.

Abstract: An antenna structure for an implantable medical device (IMD) is provided including a lower dielectric biocompatible antenna portion positioned on a body side of the structure and a high dielectric portion including at least one dielectric substrate having a high dielectric constant positioned on a device side of the structure. The biocompatible antenna portion is derived from an antenna layer, a biocompatible surface layer, and at least one layer of biocompatible dielectric material (e.g., high temperature cofire ceramic (HTCC) material) that provides a matching gradient between the antenna and the surrounding environment. The high dielectric portion may include at least one layer of low temperature cofire ceramic (LTCC) material. The high dielectric portion may be bonded to the biocompatible antenna portion or cofired with the biocompatible antenna portion to form a single bilayer monolithic antenna structure having a lower dielectric HTCC biocompatible antenna portion and a high dielectric LTCC portion.

Abstract: An electrical feedthrough assembly according to the invention can be used as a component of an implantable medical device (IMD) and/or or electrochemical cell. An IMD includes implantable pulse generators, cardioverter-defibrillators, physiologic sensors, drug-delivery systems, etc. Such assemblies require biocompatibility and resistance to degradation under applied bias current or voltage. In some forms of the invention, such assemblies are fabricated by using electrically common, multiply-interconnected electrical pathways including metallized vias and interlayer structures of conductive metallic material within bores and between ceramic layers. The layers are stacked together and sintered to form a substantially monolithic dielectric structure with at least one electrically common embedded metallization pathway extending through the structure.

Abstract: The invention includes a family of miniaturized, hermetic electrical feedthrough assemblies having at least one passive electrical component electrically coupled to a conductive pathway traversing each said assembly which are adapted for implantation within a biological system. The electrical feedthrough assembly according to the invention can be used as a component of an implantable medical device (IMD) such as an implantable pulse generator, cardioverter-defibrillator, physiologic sensor, drug-delivery system and the like. Such assemblies require biocompatibility and resistance to degradation under applied bias current or voltage. Such an assembly is fabricated by interconnected electrical pathways, or vias, of a conductive metallic paste disposed between ceramic green-state material. The layers are stacked together and sintered to form a substantially monolithic dielectric structure with at least one embedded metallization pathway extending through the structure.

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate.

Abstract: A field emissive display (40) having an anode plate (10) coupled to a cathode plate (20) and a method for manufacturing the field emissive display (40). A substrate (21) of the cathode plate (20) is manufactured or selected such that its coefficient of thermal expansion substantially matches that of the anode plate (10), i.e., the coefficients of thermal expansion of the cathode plate (20) and the anode plate (10) are within ten percent of each other. The cathode plate (20) is coupled to the anode plate (10) by means of a frit structure (41) whose coefficient of thermal expansion preferably substantially matches that of the cathode plate (20) and the anode plate (10). A control circuit can be mounted to the bottom surface of the field emissive display (40).

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate.

Abstract: A field emissive display (40) having an anode plate (10) coupled to a cathode plate (20) and a method for manufacturing the field emissive display (40). A substrate (21) of the cathode plate (20) is manufactured or selected such that its coefficient of thermal expansion substantially matches that of the anode plate (10), i.e., the coefficients of thermal expansion of the cathode plate (20) and the anode plate (10) are within ten percent of each other. The cathode plate (20) is coupled to the anode plate (10) by means of a frit structure (41) whose coefficient of thermal expansion preferably substantially matches that of the cathode plate (20) and the anode plate (10). A control circuit can be mounted to the bottom surface of the field emissive display (40).

Abstract: A field emission display (100) includes a cathode assembly (102), an anode plate (104), and a spacer (108), which extends between the cathode assembly (102) and the anode plate (104). The spacer (108) is comprised of a spacer material having a dielectric constant less than 100. A discharging period neutralizes positive electrical charge (244) and renders the spacer (108) invisible to a viewer of the field emission display (100). Operating a field emission display (100) to render a spacer (108) invisible by providing a cathode, assembly (102), an anode plate (104), and a spacer (108) comprised of a spacer material with a dielectric constant less than 100 and neutralizing positive electrical charge (244) on spacer (108).

Abstract: A method for fabricating a field emission display (100) includes the steps of providing a cathode plate (102), providing an anode plate (104), providing a spacer substrate (160) made from a bulk spacer material (109), cutting the spacer substrate (160) to define a spacer (108) having a surface (107), passivating the surface (107) of the spacer (108) using the bulk spacer material (109) to form a passivation layer, and disposing the spacer (108) between the cathode plate (102) and the anode plate (104). A field emission display (100) which includes a cathode plate (102) having a plurality of electron emitters (124), an anode plate (104) opposing the cathode plate (102), and a spacer (108) extending between the cathode plate (102) and anode plate (104). The spacer (108) has a passivation layer made from bulk spacer material (109).

Abstract: A field emission display (100) includes a cathode plate (110) having a plurality of electron emitters (119), an anode plate (120) having a plurality of phosphors (126), and a spacer (130) having a rough surface (140). The roughness of rough surface (140) is selected to improve the charging and discharging characteristics of field emission display (100). Preferably, rough surface (140) is characterized by a peak-to-valley number within a range of 0.5-6 micrometers.

Abstract: A field emission display (100) includes a cathode plate (102) having a plurality of electron emitters (124), an anode plate (104) opposing the cathode plate (102), and a bulk-resistive spacer (108) extending between the anode plate (104) and the cathode plate (102). The bulk-resistive spacer (108) is made from an electrically conductive material. The resistivity of the electrically conductive material is selected to remove impinging charges while preventing excessive power loss due to electrical current through the bulk-resistive spacer (108) from the anode plate (104) to the cathode plate (102).

Abstract: A method of producing a glass/metal package where a glass portion of the package is built up around a provided leadframe (10) using applications of solderable and glass pastes (20) which are subsequently fired (30). The glass paste and leadframe are chosen to have similar coefficients of expansion and the leadframe is pretreated to degasify and control oxidation of the metal to promote glass adhesion to the leadframe and prevent microcracking at a glass/metal interface. A seal ring is applied to the glass paste (40) and a lid is attached to the seal ring (50). The package is used to provide an sealed inert internal environment for sensitive electronic components such as a piezoelectric element. The package may be configured for leaded or surface mounting (60).

Abstract: Multiphase ceramic materials for use in electronic applications such as patch antennas and multilayered ceramic devices may be fabricated by providing a novel combination of a glassy precursor material with operable amounts of a high purity cordierite material. The combined materials are sintered at appropriate temperatures, so that a non-glassy celsian type phase is formed. The materials of the instant invention, fabricated according to the method disclosed herein, demonstrate low dielectric constant (K) and low electrical loss (high Q) characteristics.