Abstract: Embodiments discussed herein generally include electrodes having parallel ferrite boundaries that suppress RF currents perpendicular to the ferrite boundary and absorb magnetic field components parallel to the boundary. The ferrites cause the standing wave to stretch outside the ferrites and shrink inside the ferrite. A plurality of power sources are coupled to the electrode. The phase of the VHF current delivered from the power sources may be modulated to move the standing wave that is perpendicular to the ferrites in a direction parallel to the ferrites. Thus, the VHF current on the uncovered electrode area will be a plane wave, quasi-uniform (in a direction perpendicular to the ferrites) propagating in the direction parallel to the ferrites.

Abstract: Embodiments discussed herein generally include electrodes having parallel ferrite boundaries that suppress RF currents perpendicular to the ferrite boundary and absorb magnetic field components parallel to the boundary. The ferrites cause the standing wave to stretch outside the ferrites and shrink inside the ferrite. Thus, the RF current on the uncovered electrode area will be a plane wave, quasi-uniform (in a direction perpendicular to the ferrites) propagating in the direction parallel to the ferrites.

Abstract: A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.

Abstract: Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive.

Abstract: Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.

Abstract: RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

Abstract: The present invention generally comprises an apparatus having an RF choke and a remote plasma source combined into a single unit. Process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube may provide process gases and the cleaning gases to the process chamber. The inside of the gas feed tube may remain at a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead during processing. Igniting the cleaning gas plasma within the gas feed tube permits the plasma to be ignited closer to the processing chamber. Thus, RF current travels along the outside of the apparatus during deposition and microwave current ignites a plasma within the apparatus before feeding the plasma to the processing chamber.

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract: The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.

Abstract: This invention describes a method for cleaning a deposition chamber that is compatible with large area deposition. It comprises transport of activated gas from a remote plasma source to an area in the chamber in a uniform way through at least two injection points on equivalent paths for the reactive species. A respective gas injection system for the distribution of activated reactive gas comprises a source of reactive gas, a tubing for distributing the gas and an evacuable chamber. The gas is discharged to the tubing having at least one inlet constructively connected to the source and at least two outlets open to the chamber, thereby forming at least partially independent tube branches, wherein the length and the cross-section perpendicular to the gas flow of each tube branch, calculated between inlet and each respective outlet is essentially equal.