Patents by Inventor Jr Jung Lin

Jr Jung Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12125751
    Abstract: A semiconductor device includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The fin having a first end and a second end. The semiconductor device also includes a dielectric layer abutting the first end of the fin and spacer features disposed on sidewalls of the gate stack and on a top surface of the dielectric layer.
    Type: Grant
    Filed: January 20, 2023
    Date of Patent: October 22, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Jr-Jung Lin
  • Patent number: 12113122
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, wherein semiconductor strips are located between the isolation regions, and forming a dielectric dummy strip between the isolation regions, recessing the isolation regions. Some portions of the semiconductor strips protrude higher than top surfaces of the recessed isolation regions to form protruding semiconductor fins, and a portion of the dielectric dummy strip protrudes higher than the top surfaces of the recessed isolation regions to form a dielectric dummy fin. The method further includes etching the dielectric dummy fin so that a top width of the dielectric dummy fin is smaller than a bottom width of the dielectric dummy fin. A gate stack is formed on top surfaces and sidewalls of the protruding semiconductor fins and the dielectric dummy fin.
    Type: Grant
    Filed: March 3, 2023
    Date of Patent: October 8, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yao Lin, Pei-Hsiu Wu, Chih Ping Wang, Chih-Han Lin, Jr-Jung Lin, Yun Ting Chou, Chen-Yu Wu
  • Publication number: 20240329387
    Abstract: An optical package is provided. The optical package includes a first optical device and an optical guiding structure. The first optical device is disposed over a carrier. The optical guiding structure is disposed over the carrier and configured to adjust a first optical transmission path of the first optical device.
    Type: Application
    Filed: March 28, 2023
    Publication date: October 3, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Mei-Ju LU, Chi-Han CHEN, Jr-Wei LIN, Pei-Jung YANG
  • Publication number: 20230361123
    Abstract: An embodiment device includes a first source/drain region over a semiconductor substrate and a dummy fin adjacent the first source/drain region. The dummy fin comprising: a first portion comprising a first film and a second portion over the first portion, wherein the second portion comprises: a second film; and a third film. The third film is between the first film and the second film, and the third film is made of a different material than the first film and the second film. A width of the second portion is less than a width of the first portion. The device further comprises a gate stack along sidewalls of the dummy fin.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 9, 2023
    Inventors: Shih-Yao Lin, Yun-Ting Chou, Chih-Han Lin, Jr-Jung Lin
  • Patent number: 11764222
    Abstract: An embodiment device includes a first source/drain region over a semiconductor substrate and a dummy fin adjacent the first source/drain region. The dummy fin comprising: a first portion comprising a first film and a second portion over the first portion, wherein the second portion comprises: a second film; and a third film. The third film is between the first film and the second film, and the third film is made of a different material than the first film and the second film. A width of the second portion is less than a width of the first portion. The device further comprises a gate stack along sidewalls of the dummy fin.
    Type: Grant
    Filed: January 3, 2022
    Date of Patent: September 19, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Yao Lin, Yun-Ting Chou, Chih-Han Lin, Jr-Jung Lin
  • Patent number: 11721746
    Abstract: A semiconductor device includes a fin projecting upwardly from a substrate; a gate stack engaging the fin; a gate spacer on a sidewall of the gate stack and in contact with the gate stack; and a dielectric layer on the sidewall of the gate stack and in contact with the gate stack, the dielectric layer being vertically between the fin and the gate spacer, wherein the dielectric layer has a thickness small than the gate spacer.
    Type: Grant
    Filed: August 17, 2020
    Date of Patent: August 8, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Che-Cheng Chang, Jr-Jung Lin, Shih-Hao Chen, Chih-Han Lin, Mu-Tsang Lin, Yung Jung Chang
  • Publication number: 20230223453
    Abstract: Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
    Type: Application
    Filed: March 13, 2023
    Publication date: July 13, 2023
    Inventors: Chih Ping Wang, Chao-Cheng Chen, Jr-Jung Lin, Chi-Wei Yang
  • Publication number: 20230207670
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, wherein semiconductor strips are located between the isolation regions, and forming a dielectric dummy strip between the isolation regions, recessing the isolation regions. Some portions of the semiconductor strips protrude higher than top surfaces of the recessed isolation regions to form protruding semiconductor fins, and a portion of the dielectric dummy strip protrudes higher than the top surfaces of the recessed isolation regions to form a dielectric dummy fin. The method further includes etching the dielectric dummy fin so that a top width of the dielectric dummy fin is smaller than a bottom width of the dielectric dummy fin. A gate stack is formed on top surfaces and sidewalls of the protruding semiconductor fins and the dielectric dummy fin.
    Type: Application
    Filed: March 3, 2023
    Publication date: June 29, 2023
    Inventors: Shih-Yao Lin, Pei-Hsiu Wu, Chih Ping Wang, Chih-Han Lin, Jr-Jung Lin, Yun Ting Chou, Chen-Yu Wu
  • Patent number: 11670711
    Abstract: Embodiments relate to integrated circuit fabrication, and more particularly to a metal gate electrode. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface; a first gate electrode on the major surface comprising a first layer of multi-layer material; a first dielectric material adjacent to one side of the first gate electrode; and a second dielectric material adjacent to the other 3 sides of the first gate electrode, wherein the first dielectric material and the second dielectric material collectively surround the first gate electrode.
    Type: Grant
    Filed: November 30, 2020
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jr-Jung Lin, Chih-Han Lin, Jin-Aun Ng, Ming-Ching Chang, Chao-Cheng Chen
  • Publication number: 20230154800
    Abstract: A semiconductor device includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The fin having a first end and a second end. The semiconductor device also includes a dielectric layer abutting the first end of the fin and spacer features disposed on sidewalls of the gate stack and on a top surface of the dielectric layer.
    Type: Application
    Filed: January 20, 2023
    Publication date: May 18, 2023
    Inventors: Che-Cheng Chang, Chih-Han Lin, Jr-Jung Lin
  • Patent number: 11605564
    Abstract: A semiconductor device includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The fin having a first end and a second end. The semiconductor device also includes a dielectric layer abutting the first end of the fin and spacer features disposed on sidewalls of the gate stack and on a top surface of the dielectric layer.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: March 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Jr-Jung Lin
  • Patent number: 11605719
    Abstract: Semiconductor device structures with a gate structure having different profiles at different portions of the gate structure may include a fin structure on a substrate, a source/drain structure on the fin structure, and a gate structure over the fin structure and along a sidewall of the fin. The source/drain structure is proximate the gate structure. The gate structure has a top portion having a first sidewall profile and a bottom portion having a second sidewall profile different from the first sidewall profile.
    Type: Grant
    Filed: August 13, 2020
    Date of Patent: March 14, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih Ping Wang, Chao-Cheng Chen, Jr-Jung Lin, Chi-Wei Yang
  • Patent number: 11600717
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, wherein semiconductor strips are located between the isolation regions, and forming a dielectric dummy strip between the isolation regions, recessing the isolation regions. Some portions of the semiconductor strips protrude higher than top surfaces of the recessed isolation regions to form protruding semiconductor fins, and a portion of the dielectric dummy strip protrudes higher than the top surfaces of the recessed isolation regions to form a dielectric dummy fin. The method further includes etching the dielectric dummy fin so that a top width of the dielectric dummy fin is smaller than a bottom width of the dielectric dummy fin. A gate stack is formed on top surfaces and sidewalls of the protruding semiconductor fins and the dielectric dummy fin.
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: March 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Shih-Yao Lin, Pei-Hsiu Wu, Chih Ping Wang, Chih-Han Lin, Jr-Jung Lin, Yun Ting Chou, Chen-Yu Wu
  • Publication number: 20230063039
    Abstract: A method for making a semiconductor device includes forming a first fin structure, a second fin structure, and a third fin structure over a substrate. The first through third fin structures all extend along a first lateral direction, and the second fin structure is disposed between the first and third fin structures. The method includes forming a mold by filling up trenches between neighboring ones of the first through third fin structures with a first dielectric material. The method includes cutting the second fin structure by removing an upper portion of the second fin structure. The method includes replacing the upper portion of the second fin structure with a second dielectric material to form a dielectric cut structure. The method includes recessing the mold to expose upper portions of the first fin structure and the third fin structure, respectively.
    Type: Application
    Filed: August 27, 2021
    Publication date: March 2, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Cheng-Tien Chu, Chi-Wei Yang, Hsiao Wen Lee, Chih-Han Lin, Jr-Jung Lin
  • Publication number: 20220328356
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.
    Type: Application
    Filed: June 24, 2022
    Publication date: October 13, 2022
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung-Jung Chang
  • Patent number: 11380590
    Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.
    Type: Grant
    Filed: June 1, 2020
    Date of Patent: July 5, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung-Jung Chang
  • Publication number: 20220122972
    Abstract: An embodiment device includes a first source/drain region over a semiconductor substrate and a dummy fin adjacent the first source/drain region. The dummy fin comprising: a first portion comprising a first film and a second portion over the first portion, wherein the second portion comprises: a second film; and a third film. The third film is between the first film and the second film, and the third film is made of a different material than the first film and the second film. A width of the second portion is less than a width of the first portion. The device further comprises a gate stack along sidewalls of the dummy fin.
    Type: Application
    Filed: January 3, 2022
    Publication date: April 21, 2022
    Inventors: Shih-Yao Lin, Yun-Ting Chou, Chih-Han Lin, Jr-Jung Lin
  • Patent number: 11257931
    Abstract: In some embodiments, a field effect transistor structure includes a first semiconductor structure and a gate structure. The first semiconductor structure includes a channel region, and a source region and a drain region. The source region and the drain region are formed on opposite ends of the channel region, respectively. The gate structure includes a central region and footing regions. The central region is formed over the first semiconductor structure. The footing regions are formed on opposite sides of the central region and along where the central region is adjacent to the first semiconductor structure.
    Type: Grant
    Filed: January 10, 2020
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung Jung Chang
  • Patent number: 11217586
    Abstract: An embodiment device includes a first source/drain region over a semiconductor substrate and a dummy fin adjacent the first source/drain region. The dummy fin comprising: a first portion comprising a first film and a second portion over the first portion, wherein the second portion comprises: a second film; and a third film. The third film is between the first film and the second film, and the third film is made of a different material than the first film and the second film. A width of the second portion is less than a width of the first portion. The device further comprises a gate stack along sidewalls of the dummy fin.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: January 4, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Yao Lin, Yun-Ting Chou, Chih-Han Lin, Jr-Jung Lin
  • Publication number: 20210367059
    Abstract: A method includes forming isolation regions extending into a semiconductor substrate, wherein semiconductor strips are located between the isolation regions, and forming a dielectric dummy strip between the isolation regions, recessing the isolation regions. Some portions of the semiconductor strips protrude higher than top surfaces of the recessed isolation regions to form protruding semiconductor fins, and a portion of the dielectric dummy strip protrudes higher than the top surfaces of the recessed isolation regions to form a dielectric dummy fin. The method further includes etching the dielectric dummy fin so that a top width of the dielectric dummy fin is smaller than a bottom width of the dielectric dummy fin. A gate stack is formed on top surfaces and sidewalls of the protruding semiconductor fins and the dielectric dummy fin.
    Type: Application
    Filed: October 13, 2020
    Publication date: November 25, 2021
    Inventors: Shih-Yao Lin, Pei-Hsiu Wu, Chih Ping Wang, Chih-Han Lin, Jr-Jung Lin, Yun Ting Chou, Chen-Yu Wu