Patents by Inventor Jr-Sheng Chen

Jr-Sheng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9997336
    Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.
    Type: Grant
    Filed: April 26, 2016
    Date of Patent: June 12, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Han Meng, Jr-Sheng Chen, Yin-Tun Chou, Chih-Hua Chan, Lin-Ching Huang, Yu-Pei Chiang
  • Publication number: 20180148324
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.
    Type: Application
    Filed: October 5, 2017
    Publication date: May 31, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Han MENG, Chih-Hsien HSU, Chia-Chi CHUNG, Yu-Pei CHIANG, Wen-Chih CHEN, Chen-Huang HUANG, Zhi-Sheng XU, Jr-Sheng CHEN, Kuo-Chin LIU, Lin-Ching HUANG
  • Publication number: 20170309500
    Abstract: A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.
    Type: Application
    Filed: April 26, 2016
    Publication date: October 26, 2017
    Inventors: Chin-Han Meng, Jr-Sheng Chen, Yin-Tun Chou, Chih-Hua Chan, Lin-Ching Huang, Yu-Pei Chiang