Patents by Inventor Ju Heon YOON

Ju Heon YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190273187
    Abstract: Provided is a semiconductor light emitting device which includes: a light emitting structure including a plurality of semiconductor layers and configured to generate and emit light to an outside of the light emitting structure; a transparent electrode layer disposed on the light emitting structure; a transparent protective layer disposed on the transparent electrode layer; a distributed Bragg reflector (DBR) layer disposed on the transparent protective layer and covering at least a part of the transparent electrode layer; and at least one electrode pad connected to the transparent electrode layer through a hole or via.
    Type: Application
    Filed: July 6, 2018
    Publication date: September 5, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon YOON, Ha Yeong SON, Young Sub SHIN
  • Publication number: 20190237626
    Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.
    Type: Application
    Filed: August 6, 2018
    Publication date: August 1, 2019
    Inventors: Ju Heon YOON, Tae Hun KIM, Jae In SIM
  • Publication number: 20190229242
    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
    Type: Application
    Filed: July 26, 2018
    Publication date: July 25, 2019
    Inventors: Ju Heon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM
  • Patent number: 10340420
    Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: July 2, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-heon Yoon, Jae-in Sim, Gi-bum Kim, Ha-yeong Son, Young-sub Shin
  • Publication number: 20190181297
    Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.
    Type: Application
    Filed: May 21, 2018
    Publication date: June 13, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JU HEON YOON, JAE IN SIM, TAE HUN KIM, GI BUM KIM
  • Publication number: 20190027649
    Abstract: A semiconductor light-emitting device includes a light-emitting structure, a reflective electrode layer, and a transparent cover layer. The light-emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer. The reflective electrode layer covers an upper surface of the second semiconductor layer. The transparent cover layer covers an upper surface of the second semiconductor layer on the reflective electrode layer. The transparent cover layer includes a tail portion including a first portion and a second portion. The first portion covers an edge of the reflective electrode layer and a convex upper surface. The second portion is thinner than and extends from the first portion.
    Type: Application
    Filed: January 22, 2018
    Publication date: January 24, 2019
    Inventors: Ju-heon YOON, Jae-in SIM, Gi-bum KIM, Ha-yeong SON, Young-sub SHIN
  • Patent number: 10074773
    Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: September 11, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae In Sim, Ju Heon Yoon, Gi Bum Kim, Ji Hye Lee
  • Publication number: 20180198025
    Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.
    Type: Application
    Filed: August 8, 2017
    Publication date: July 12, 2018
    Inventors: Jae In SIM, Ju Heon YOON, Gi Bum KIM, Ji Hye LEE
  • Publication number: 20180175247
    Abstract: A semiconductor light-emitting device includes a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a reflective electrode layer covering a top surface of the second semiconductor layer; an insulating structure covering a region of the top surface of the second semiconductor layer, the region being around the reflective electrode layer; a first interconnection conductive layer contacting a contact region of the first semiconductor layer through the insulating structure and, together with the insulating structure, constituting an omni-directional reflector (ODR) structure; and a second interconnection conductive layer contacting the reflective electrode layer through the insulating structure.
    Type: Application
    Filed: May 31, 2017
    Publication date: June 21, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ju-heon YOON, Jae-in Sim, Gi-bum Kim
  • Patent number: 9716214
    Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.
    Type: Grant
    Filed: May 5, 2016
    Date of Patent: July 25, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju-heon Yoon, Hak-hwan Kim, Dae-sup Kim, Jeong-hee Kim, Dong-myung Shin, Kwang-seok Yun
  • Patent number: 9653515
    Abstract: A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: May 16, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Myeong Ha Kim
  • Publication number: 20160372646
    Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.
    Type: Application
    Filed: May 5, 2016
    Publication date: December 22, 2016
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju-heon YOON, Hak-hwan KIM, Dae-sup KIM, Jeong-hee KIM, Dong-myung SHIN, Kwang-seok YUN
  • Patent number: 9466765
    Abstract: A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.
    Type: Grant
    Filed: February 29, 2016
    Date of Patent: October 11, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Yeon Ji Kim, Yong Seok Kim, Tae Kang Kim, Tae Hun Kim
  • Patent number: 9412903
    Abstract: A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: August 9, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Joon Woo Jeon, Dong Hyuk Joo, Jin Young Choi
  • Patent number: 9406635
    Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: August 2, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Yong Il Kim, Myong Soo Cho
  • Publication number: 20160072004
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.
    Type: Application
    Filed: May 15, 2015
    Publication date: March 10, 2016
    Inventors: Sang Yeob SONG, Ju Heon YOON, Gi Bum KIM, Hyun Young KIM, Jong Hoon HA
  • Publication number: 20160056118
    Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.
    Type: Application
    Filed: April 22, 2015
    Publication date: February 25, 2016
    Inventors: Ju Heon YOON, Yong Il KIM, Myong Soo CHO
  • Patent number: 9263652
    Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: February 16, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju-heon Yoon, Gi-bum Kim, Sang-yeon Kim, Sang-yeob Song, Won-goo Hur
  • Publication number: 20150207051
    Abstract: A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.
    Type: Application
    Filed: January 20, 2015
    Publication date: July 23, 2015
    Inventors: Ju Heon YOON, Joon Woo JEON, Dong Hyuk JOO, Jin Young CHOI
  • Patent number: 9070835
    Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.
    Type: Grant
    Filed: January 2, 2014
    Date of Patent: June 30, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Heon Yoon, Sang Yeon Kim, Seung Hwan Lee, Jin Hyun Lee, Wan Tae Lim, Hyun Kwon Hong