Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.

Abstract: A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.

Abstract: An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and an external connection terminal provided on the electrode structure, the external connection terminal comprising a major axis and a minor axis. The major axis of the external connection terminal is perpendicular to a cleaving plane of the substrate.

Abstract: A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a substrate; forming a first electrode and a second electrode on the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively; forming an insulating layer covering the first and second electrodes and having first and second openings partially exposing surfaces of the first and second electrodes, respectively; and performing a plasma treatment on a surface of the insulating layer and the partially exposed surfaces of the first and second electrodes to form an unevenness portion on the surface of the insulating layer and form an oxygen-depleted layer on the partially exposed surfaces of the first and second electrodes.

Abstract: A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.

Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.

Abstract: A semiconductor light emitting device includes a multi-region solder pad. The semiconductor light emitting device includes a light emitting diode (LED) chip having a first surface on which first and second electrodes are disposed and a second surface opposing the first surface. A passivation layer is disposed on a surface of the LED chip such that bonding regions of the first and second electrodes are exposed through the passivation layer. A solder pad is disposed in each respective bonding region and has a plurality of separated regions. A solder bump is disposed in each respective bonding region and covers the plurality of separated regions of the respective solder pad. In the semiconductor light emitting device, separation between the solder pad and the solder bump may thereby be effectively prevented by ensuring that an interface between a solder pad and a solder bump is not entirely damaged.

Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Abstract: A semiconductor light emitting device includes a stacked semiconductor structure including a first conductivity-type semiconductor layer having a top surface divided into a first region and a second region, and an active layer and a second conductivity-type semiconductor layer disposed sequentially on the second region of the first conductivity-type semiconductor layer. First and second contact electrodes are disposed in the first region of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively. A current spreading layer is disposed on the second contact electrode and comprises a first conductive layer having a first resistivity and a second conductive layer having a second resistivity smaller than the first resistivity alternately stacked.

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract: A semiconductor light emitting device includes a substrate; a light emitting structure and a Zener diode structure disposed to be spaced apart from each other on the substrate, and including a first semiconductor layer and a second semiconductor layer, respectively; and a common, integrally formed, electrode electrically connected to the first semiconductor layer of the light emitting structure and the second semiconductor layer of the Zener diode structure. At least a portion of the Zener diode formed by the Zener diode structure is disposed below the common electrode.

Abstract: A semiconductor light emitting device includes a substrate, a first structure, a second structure, first and second n-electrodes, and first and second p-electrodes. The first structure is disposed on the substrate and includes a first n-type semiconductor layer, a first active layer, and a first p-type semiconductor layer. The second structure is spaced apart from the first structure on the substrate and includes a second n-type semiconductor layer, a second active layer and a second p-type semiconductor layer. The first n-electrode and the first p-electrode are connected to the first n-type semiconductor layer and the first p-type semiconductor layer, respectively. The second n-electrode and the second p-electrode are connected to the second n-type semiconductor layer and the second p-type semiconductor layer, respectively. The second n-electrode is spaced apart from the second active layer to encompass the second active layer.

Abstract: A semiconductor light emitting device including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first electrode connected to the first conductivity type semiconductor layer; a second electrode including a contact layer connected to the second conductivity type semiconductor layer, a capping layer disposed on the contact layer, and a metal buffer layer disposed on the capping layer, the metal buffer layer encompasses an upper and lateral surface of the capping layer; a first insulating layer disposed on the light emitting structure such that the first and second electrodes are exposed; and a second insulating layer disposed on the first insulating layer such that at least a portion of the first electrode and at least a portion of the metal buffer layer are exposed.

Abstract: A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

Abstract: Semiconductor light-emitting devices including a semiconductor region that includes a light-emitting structure; and an electrode layer including a first reflection metal layer that contacts a first portion of the semiconductor region and being configured to reflect light from the light-emitting structure and a second reflection metal layer that contacts a second portion of the semiconductor region and being configured to reflect light from the light-emitting structure, wherein the second reflection metal layer is spaced apart from the first reflection metal layer and at least partially covers the first reflection metal layer.

Abstract: Provided is a Se- or S-based thin film solar cell, including a substrate, a rear electrode formed on the substrate, a light absorbing layer formed on the rear electrode and containing at least one of selenium (Se) and sulfur (S), and an rear electrode top layer. The rear electrode top layer is formed between the rear electrode and the light absorbing layer, and contains a large amount of oxygen (O) to control diffusion of sodium (Na) through the rear electrode to the light absorbing layer. In this manner, it is possible to improve the electrical conductivity and interfacial adhesion of the rear electrode while stimulating diffusion of sodium (Na) to improve the efficiency of a thin film solar cell.