Patents by Inventor Ju Jason Zhang
Ju Jason Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11888332Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: August 17, 2022Date of Patent: January 30, 2024Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 11862996Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: July 11, 2022Date of Patent: January 2, 2024Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 11770010Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: December 9, 2022Date of Patent: September 26, 2023Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 11757290Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: August 12, 2022Date of Patent: September 12, 2023Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20230111993Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: December 9, 2022Publication date: April 13, 2023Applicant: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 11605955Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: August 18, 2022Date of Patent: March 14, 2023Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20230031402Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: July 11, 2022Publication date: February 2, 2023Applicant: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 11545838Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: August 18, 2022Date of Patent: January 3, 2023Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20220393481Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: August 18, 2022Publication date: December 8, 2022Applicant: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20220393480Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: August 17, 2022Publication date: December 8, 2022Applicant: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20220393482Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: August 18, 2022Publication date: December 8, 2022Applicant: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20220393479Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: August 12, 2022Publication date: December 8, 2022Applicant: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 11404884Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: November 28, 2019Date of Patent: August 2, 2022Assignee: Navitas Semiconductor LimitedInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20210143647Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.Type: ApplicationFiled: January 18, 2021Publication date: May 13, 2021Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10897142Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.Type: GrantFiled: June 20, 2019Date of Patent: January 19, 2021Assignee: NAVITAS SEMICONDUCTOR LIMITEDInventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20200099241Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: November 28, 2019Publication date: March 26, 2020Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20190319471Abstract: A half bridge circuit is disclosed. The half bridge circuit includes a low side transistor having a low side transistor gate, where a low side transistor gate voltage at the low side transistor gate is controlled by a low side gate signal. The half bridge circuit also includes a high side transistor having a high side transistor gate, where a high side transistor gate voltage at the high side transistor gate is controlled by a high side gate signal. The half bridge circuit also includes a semiconductor circuit configured to allow current to flow from a ground referenced power supply node to a first floating power supply terminal. The semiconductor circuit includes a first transistor, where a gate voltage is controlled by a gate drive circuit control signal, a source is connected to the ground referenced power supply node, and a drain connected to the first floating power supply terminal.Type: ApplicationFiled: June 20, 2019Publication date: October 17, 2019Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10424970Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).Type: GrantFiled: May 29, 2018Date of Patent: September 24, 2019Assignee: Navitas Semiconductor, Inc.Inventor: Ju Jason Zhang
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Patent number: 10333327Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: April 24, 2018Date of Patent: June 25, 2019Assignee: Navitas Semiconductor, Inc.Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20190148961Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: ApplicationFiled: April 24, 2018Publication date: May 16, 2019Inventors: Daniel Marvin Kinzer, Santosh Sharma, Ju Jason Zhang