Patents by Inventor Ju Jason Zhang
Ju Jason Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190115788Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).Type: ApplicationFiled: May 29, 2018Publication date: April 18, 2019Inventor: Ju Jason Zhang
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Patent number: 10135275Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: GrantFiled: July 25, 2016Date of Patent: November 20, 2018Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 10008884Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).Type: GrantFiled: January 26, 2016Date of Patent: June 26, 2018Assignee: NAVITAS SEMICONDUCTOR INC.Inventor: Ju Jason Zhang
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Patent number: 9985626Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.Type: GrantFiled: January 29, 2016Date of Patent: May 29, 2018Assignee: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Ju Jason Zhang
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Patent number: 9960620Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: May 1, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9859732Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: January 2, 2018Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20170222644Abstract: A DC-AC converter is disclosed. The DC-AC converter generates an output AC signal, and has an input DC-AC converter which generates a first AC signal, a transformer device which receives the first AC signal and generates a second AC signal, and a first bidirectional switch which selectively connects a first transformer output terminal and a first output terminal. The DC-AC converter also has a first capacitor which powers the first bidirectional switch, a first charging circuit which charges the first capacitor, and a second bidirectional which selectively conduct connects a second transformer output terminal and a second output terminal. The DC-AC converter also has a second capacitor which powers the second bidirectional switch, and a second charging circuit which charges the second capacitor. Each of the bidirectional switches includes series connected transistors between first and second input/output terminals, and a transistor driver which drives the transistors.Type: ApplicationFiled: January 29, 2016Publication date: August 3, 2017Applicant: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Ju Jason Zhang
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Patent number: 9716395Abstract: An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.Type: GrantFiled: June 11, 2015Date of Patent: July 25, 2017Assignee: NAVITAS SEMICONDUCTOR, INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9685869Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: November 23, 2016Date of Patent: June 20, 2017Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9647476Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: May 9, 2017Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9621044Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.Type: GrantFiled: April 1, 2016Date of Patent: April 11, 2017Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Ju Jason Zhang, Daniel M. Kinzer
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Patent number: 9571093Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments, a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions.Type: GrantFiled: October 7, 2015Date of Patent: February 14, 2017Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9570927Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: June 2, 2015Date of Patent: February 14, 2017Assignee: Navitas Semiconductor, Inc.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9537338Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: January 3, 2017Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20160336926Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.Type: ApplicationFiled: July 25, 2016Publication date: November 17, 2016Applicant: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Publication number: 20160218623Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Applicant: NAVITAS SEMICONDUCTOR INC.Inventors: Ju Jason Zhang, Daniel M. Kinzer
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Patent number: 9401612Abstract: GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Both the high side and the low side devices may have one or more integrated control, support and logic functions. Some devices employ electro-static discharge circuits and features formed within the GaN-based devices to improve the reliability and performance of the half bridge power conversion circuits.Type: GrantFiled: March 24, 2015Date of Patent: July 26, 2016Assignee: NAVITAS SEMICONDUCTOR INC.Inventors: Daniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
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Patent number: 9379620Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.Type: GrantFiled: November 26, 2014Date of Patent: June 28, 2016Assignee: Navitas Semiconductor Inc.Inventors: Ju Jason Zhang, Daniel M. Kinzer
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Publication number: 20160164346Abstract: A control scheme and architecture for a wireless electrical energy transmission circuit employs two solid-state switches and a zero voltage switching (ZVS) topology to power an antenna network. The switches drive the antenna network at its resonant frequency and simultaneously energize a separate resonant circuit that has a resonant frequency lower than the antenna circuit. The resonant circuit creates out of phase voltage and current waveforms that enable the switches to operate with (ZVS).Type: ApplicationFiled: January 26, 2016Publication date: June 9, 2016Applicant: NAVITAS SEMICONDUCTOR INC.Inventor: Ju Jason Zhang
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Publication number: 20160099647Abstract: A control scheme and architecture for a power conversion circuit employs two bidirectional switches and a zero voltage switching (ZVS) scheme for the high-side switch. Methods of incorporating the control scheme into multiple power conversion circuit topologies are disclosed. Methods of device integration including co-packaging and monolithic fabrication are also disclosed.Type: ApplicationFiled: November 26, 2014Publication date: April 7, 2016Inventors: Ju Jason Zhang, Daniel M. Kinzer