Abstract: A mixed ionic-electronic conductor (MIEC) in contact with a solid electrolyte includes a material having a bandgap less than 3 eV. The material includes an end-member phase directly connected to an alkali metal by a tie-line in an equilibrium phase diagram. The material is thermodynamically stable with a solid electrolyte. The MIEC includes plurality of open pores, formed within the MIEC, to facilitate motion of the alkali metal to at least one of store the alkali metal in the plurality of open pores or release the alkali metal from the plurality of open pores. The solid electrolyte has an ionic conductivity to ions of the alkali metal greater than 1 mS cm?1, a thickness less than 100 ?m, and comprises at least one of a ceramic or a polymer.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes first nanostructures formed over a substrate along a first direction, and second nanostructures formed over the substrate along the first direction. The semiconductor structure includes a first gate structure formed over the first nanostructures along a second direction, and a second gate structure formed over the second nanostructures along the second direction. The semiconductor structure also includes a dielectric wall structure between the first gate structure and the second gate structure along the second direction. The semiconductor structure also includes a dielectric strip structure formed along the second direction. The dielectric strip structure includes a protruding portion which is lower than a bottom surface of a bottommost first nanostructure.

Abstract: An electronic device includes an electronic unit and a circuit structure. The circuit structure is electrically connected to the electronic unit and includes a first circuit structure, a second circuit structure, a bonding pad, and an adjustment layer. The first circuit structure includes at least one first circuit layer and at least one first insulation layer. The second circuit structure is disposed between the electronic unit and the first circuit structure, and includes at least one second circuit layer and at least one second insulation layer. The bonding pad and the adjustment layer are disposed between the second circuit structure and the first circuit structure. A coefficient of thermal expansion of the adjustment layer is smaller than that of at least one of the at least one first insulation layer of the first circuit structure and the at least one second insulation layer of the second circuit structure.

Abstract: One embodiment of the present disclosure provides an optical device which includes a waveguide and a light modulator. The light modulator includes a phase-change material and is in direct contact with an outer surface of the waveguide. The optical device also includes a thermal conducting member. The thermal conducting member is positioned on the light modulating member. The optical device further includes a heating member. The heating member is placed on the thermal conducting member and is distant away from the light modulator and the waveguide. The heat produced from the heating member is transferred to the light modulator through the thermal conducting member thereby inducing a phase transition of the light modulator.

Abstract: The invention provides a semiconductor structure, which comprises a first chip and a second chip attached to each other, wherein the first chip comprises a quantum dot pattern, and the second chip comprises a through silicon via (TSV), wherein the quantum dot pattern and the through silicon via are aligned with each other.

Abstract: An electronic device having a central area and a peripheral area surrounding the central area is provided. The electronic device includes a substrate, a through hole, a buffer layer, a first circuit structure, an electronic component and a first pad. The substrate has a first surface and a second surface opposite to the first surface. The through hole penetrates through the substrate and has a first through hole and a second through hole. The buffer layer covers the first surface, the second surface, an inner wall of the first through hole and an inner wall of the second through hole. The first circuit structure is disposed on the first surface. The first through hole corresponds to the central area, the second through hole corresponds to the peripheral area, and a width of the second through hole is greater than a width of the first through hole.

Abstract: One embodiment of the present disclosure provides an optical device which includes a waveguide and a light modulator. The light modulator comprising a bridge segment positioned on the waveguide, wherein the bridge segment comprises a phase-change material. The optical device also includes a heating member. The heating member includes an intermediate segment and two electric contact segments. The intermediate segment is in direct contact with the bridge segment of the light modulator. The two electric contact segments are connected to two ends of the intermediate segment, wherein heat produced from the heating member is directly transferred to the bridge segment of the light modulator thereby inducing a phase transition thereof.

Abstract: A manufacturing method of a semiconductor structure includes the following steps. A first wafer is provided. The first wafer includes a first substrate and a first device layer. A second wafer is provided. The second wafer includes a second substrate and a second device layer. The second device layer is bonded to the first device layer. An edge trimming process is performed on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface. The second upper surface is higher than the first upper surface. A first photoresist layer is formed. The first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region. The damaged region is removed by using the first photoresist layer as a mask. The first photoresist layer is removed.

Abstract: An electronic device is provided, including a chip unit, a heat dissipation film, an encapsulation layer, a through hole, and a circuit structure. The chip unit has a first side and a second side opposite to the first side. The heat dissipation film is disposed on the first side. The encapsulation layer surrounds the chip unit and the heat dissipation film. The through hole penetrates the encapsulation layer, and has a first position and a second position. The circuit structure is disposed on the second side. The through hole is electrically connected to the chip unit through the circuit structure. The first position is connected to the circuit structure, and the second position is farther away from the circuit structure than the first position. The first position has a first width, the second position has a second width, and the first width is greater than the second width.

Abstract: The present disclosure provides reagents and methods for selecting MSCs having advantageous properties for therapeutic applications, particularly those related to cellular aging and producing MSCs of appropriate and sufficient robustness.

Abstract: A gait evaluating system including a processor is provided. The processor identifies whether a gait type of the user belongs to a normal gait, a non-neuropathic gait or a neuropathic gait based on step feature values of a user and walking limb feature values of the user. In response to that the gait type of the user belongs to the non-neuropathic gait, the processor controls the display panel to display a first auxiliary information, a second auxiliary information, and a third auxiliary information. The first auxiliary information indicates a potential sarcopenia of the user. The second auxiliary information indicates a dietary guideline for muscle building and muscle strengthening. The third auxiliary information shows a motion instruction video for regaining or maintaining muscle strength of the user.

Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: A coil module is provided, including a second coil mechanism. The second coil mechanism includes a third coil assembly and a second base corresponding to the third coil assembly. The second base has a positioning assembly corresponding to a first coil mechanism.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, and a heater element on the semiconductor substrate, the heater element configured to generate heat in response to a current flowing therethrough. The semiconductor device also includes a conductor material having a programmable conductivity, and an insulator layer between the heater element and the conductor material, where the conductor material is configured to be programmed by applying one or more voltage differences to one or more of the heater element and the conductor material, and where a capacitance between the conductor material and the heater element is configured to be controlled by the voltage differences such that the capacitance is lower while the conductor material is being programmed than while the conductor material is not being programmed.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a first nanostructure and a second nanostructure over a substrate, forming a first interfacial layer on the first nanostructure and a second interfacial layer on the second nanostructure, forming a first gate dielectric layer on the first interfacial layer and a second gate dielectric layer on the second interfacial layer, forming a patterned mask layer on the second gate dielectric layer while exposing the first gate dielectric layer, and driving nitrogen into the first interfacial layer, thereby forming a nitrogen-doped interfacial layer.

Abstract: Compositions and processes for forming barrier coatings to prevent hydrogen embrittlement of an underlying material are disclosed. The coating can be made up of composite structures of metal and oxide that are alternately deposited onto a substrate for creating a multilayer coated substrate. Such multilayer coating can be incorporated into many contexts in which hydrogen permeation prevention is desired, such as pipelines and manufacture of advanced automotive steels. The process involves depositing a metal layer onto the substrate followed by a metal oxide layer thereon. The interface of the metal layer and the oxide layer can form space-charge zones that decrease hydrogen permeability therethrough.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate having a base, a first fin, and a second fin over the base. The method includes forming a gate stack over the first fin and the second fin. The method includes forming a first spacer over gate sidewalls of the gate stack and a second spacer adjacent to the second fin. The method includes partially removing the first fin and the second fin. The method includes forming a first source/drain structure and a second source/drain structure in the first trench and the second trench respectively. A first ratio of a first height of the first merged portion to a second height of a first top surface of the first source/drain structure is greater than or equal to about 0.5.

Abstract: An electronic device includes an electronic unit having a first side and a second side; an encapsulation layer surrounding the electronic unit and having a plurality of openings exposing the second side of the electronic unit; a first circuit structure disposed on the first side of the electronic unit and electrically connected to the electronic unit; a second circuit structure disposed on the second side of the electronic unit; a via penetrating the encapsulation layer and electrically connecting the first circuit structure to the second circuit structure; and a heat dissipation layer disposed on the second side of the electronic unit, wherein the heat dissipation layer contacts the electronic unit through the plurality of openings.

Abstract: An electronic device including an electronic element, an encapsulation layer, a circuit structure, a bonding element, and a bolt is provided. The encapsulation layer surrounds the electronic element. The circuit structure is electrically connected to the electronic element. The bonding element is electrically connected to the electronic element via the circuit structure. The bolt is disposed between the circuit structure and the encapsulation layer. A manufacturing method of an electronic device is also provided.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.