Abstract: An embodiment phase change material switch may include a first phase change material element, a second phase change material element, a first conductor electrically connected to a first end of each of the first phase change material element and the second phase change material element such that the first conductor is configured as a first terminal of an electrical circuit having a parallel configuration, a second conductor electrically connected to a second end of each of the first phase change material element and the second phase change material element such that the second conductor is configured as a second terminal of the electrical circuit having the parallel configuration, and a heating device coupled to the first phase change material element and to the second phase change material element and configured to supply a heat pulse to the first phase change material element and to the second phase change material element.

Abstract: An inspection method for electronic devices includes the steps of: providing an object under test; inspecting the object under test through an inspection system having an optical apparatus, including the steps of: using the optical apparatus to provide a first inspection light to inspect a first position of the object under test, and then receiving a first reflection light for being recorded in a controller; moving the optical apparatus; and using the optical apparatus to provide a second inspection light to inspect the first position of the object under test, and then receiving a second reflection light for being recorded in the controller; and determining whether there is an abnormality through the first reflection light and the second reflection light.

Abstract: An electronic device includes a substrate, a circuit layer, at least one electronic unit, a stress adjustment layer, and a buffer layer. The substrate has a first surface and a second surface opposite to each other and at least one side connected to the first surface and the second surface. The circuit layer is disposed on the first surface of the substrate. The at least one electronic unit is electronically connected to the circuit layer. The stress adjustment layer is disposed on the second surface of the substrate. The buffer layer surrounds the substrate, wherein the stress adjustment layer is located between the substrate and the buffer layer, and the buffer layer is in contact with the at least one side of the substrate.

Abstract: A circuit structure, an electronic device, and a manufacturing method of the electronic device are provided. The circuit structure includes a support layer, a base layer, and a circuit layer. The base layer is disposed on the support layer. The circuit layer is disposed on the base layer and includes a first conductive layer, a first insulating layer, and a second conductive layer. The first conductive layer is disposed on the base layer. The first insulating layer is disposed on the first conductive layer. The second conductive layer is disposed on the first insulating layer. The elongation of the support layer is smaller than the elongation of the base layer.

Abstract: Device structures and methods for forming the same are provided. A semiconductor structure according to the present disclosure includes a first electrode and a second electrode disposed over a substrate, a heating element disposed over the substrate, a phase-change material layer disposed over the substrate, and an insulator disposed vertically between the heating element and the phase-change material layer. The phase-change material layer includes at least a first segment and a second segment separated from the first segment. Each of the first and second segments overlaps the heating element in a top view. Each of the first and second segments is electrically connected with both the first and second electrodes.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer.

Abstract: The present disclosure relates to a network device, a method executed by the network device, and a computer-readable medium. Some aspects of the present disclosure relate to a first network device, including a memory, on which instructions are stored, and a processor configured to execute the instructions stored on the memory to cause the first network device to execute the following operations: executing channel scanning on a main working channel of a second network device coupled to the first network device to detect a beacon frame broadcast by the second network device; determining whether a beacon frame broadcast by the second network device is detected within a first predetermined time duration; and at least partially in response to the determination that no beacon frame broadcast by the second network device has been detected within the first predetermined time duration, causing the second network device to automatically restart its Wi-Fi module.

Abstract: A semiconductor device includes a first film, a second film, and a third film that each include a phase change material (PCM) and are arranged with respect to one another along a first lateral direction. The semiconductor device includes a first metal pad, a second metal pad, a third metal pad, and a fourth metal pad. The first and second metal pads are disposed over ends of the first film, respectively, the second and third metal pads are disposed over ends of the second film, respectively, and the third and fourth metal pads are disposed over ends of the third film, respectively. The semiconductor device includes a first heater, a second heater, and a third heater, respectively disposed below the first film, the second film, and the third film.

Abstract: Described herein is a carbon-efficient bicarbonate electrolyzer and assembly. In some embodiments, an electrolyzer assembly comprises: a cathode disposed in a cathode chamber having ports for receiving a bicarbonate (HCO3?) solution; an anode disposed in an anode chamber having ports for receiving an anolyte; a cation exchange membrane disposed between the cathode chamber and the anode chamber; and a buffer layer disposed between the cathode chamber and the cation exchange membrane. In some embodiments, the electrolyzer assembly is configured to convert the bicarbonate (HCO3?) solution to a formate (OOCH?) solution by movement of cations from the anode to the cathode via the cation exchange membrane.

Abstract: An electronic device is provided. The electronic device includes a chip, a redistribution structure, a contact pad, a buffer layer, and a first connection pad. The redistribution structure is electrically connected to the chip. The redistribution structure includes a metal pad, and the metal pad is disposed opposite to the chip. The contact pad is disposed on the metal pad. The buffer layer is disposed on the redistribution structure and includes an opening. The opening exposes at least a portion of the contact pad. The first connection pad is disposed on the contact pad and extends in the opening. Moreover, in a normal direction of the chip, the metal pad, the contact pad and the first connection pad overlap. A method of manufacturing an electronic device is also provided.

Abstract: Compositions and methods related to multiaxially straining defect doped materials as well as their use in electrical circuits are generally described.

Abstract: Phase change material (PCM) switches and methods of fabrication thereof that include a phase change material layer and a selector having a first electrode and an ovonic threshold switching (OTS) material layer. The first electrode may selectively apply a bias voltage to the OTS layer, causing localized heating within the OTS layer. The phase change material layer may be in thermal contact with the OTS layer such that the OTS layer may heat an active region of the phase change material layer. By controlling the voltage applied to the first electrode and the resultant heating within the OTS layer, the active region of the phase change material layer may be selectively transitioned between a high resistivity state and a low resistivity state. A PCM switch according to various embodiments may enable low power and fast switching between high resistivity and low resistivity states and reduced parasitic capacitance.

Abstract: The present disclosure provides an electronic device and a manufacturing method. The electronic device includes a base layer, a first redistribution structure, a first electronic unit, a second electronic unit, a protecting layer, and a connecting component. The base layer includes at least one via structure. The first redistribution structure is disposed on the base layer, and the first electronic unit and the second electronic unit are disposed on the first redistribution structure. The protecting layer surrounds the first electronic unit and the second electronic unit, and the first electronic unit and the second electronic unit are electrically connected to the connecting component through the first redistribution structure and the at least one via structure.

Abstract: A manufacturing method of an electronic device and an electronic device are disclosed. The method includes: forming an intermediate layer on a first carrier, patterning the intermediate layer to form alignment marks; forming a release layer on the first carrier; disposing chips on the release layer, each chip including a bonding pad and a surface; forming an insulating layer surrounding the chips on the release layer to form a package structure; transferring the package structure to a second carrier, enabling the surface of each chip to face away from the second carrier and to be exposed by an upper surface of the insulating layer, a step difference formed between the surface of each chip and at least a portion of the upper surface of the insulating layer in a normal direction; and forming a redistribution layer electrically connected to each chip through the bonding pads on the package structure.

Abstract: In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.

Abstract: A method for analyzing an electrocardiography (ECG) signal is provided. The ECG signal is measured through a sensor. One or more specified waveforms in the ECG signal are detected. Multiple ECG features from each specified waveform are captured. The ECG features are input into multiple candidate models to obtain multiple candidate scores. Each candidate score is compared with a standard value to obtain an ideal score among the candidate scores. One of the candidate models corresponding to the ideal score is selected as a risk prediction model to predict disease risk through the risk prediction model.

Abstract: The electronic device of the present disclosure includes a redistribution structure, chip units, and a protective layer. The redistribution structure includes alignment marks. The chip units are electrically connected to the redistribution structure, and include a first chip unit and a second chip unit. The protective layer surrounds the first chip unit and the second chip unit. The chip units and the alignment marks are arranged along a direction. The first chip unit is disposed between the first alignment mark and the third alignment mark, and the second chip unit is disposed between the second alignment mark and the fourth alignment mark. The second alignment mark and the third alignment mark are disposed between the first chip unit and the second chip unit. The number of the alignment marks is greater than the number of the chip units.

Abstract: A device structure includes a heater line located over a substrate, an aluminum nitride layer having an inhomogeneous material composition, and a phase change material line. A top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The PCM line includes a middle portion that overlies the heater line, a first end portion adjoined to a first side of the middle portion, and a second end portion adjoined to a second side of the middle portion.

Abstract: A heater material layer is over a substrate. A reactive sputtering process is performed while the substrate and the heater material layer are placed in a process chamber. Sputtered aluminum atoms and reactive nitrogen-containing molecules react inside the process chamber to form a continuous inhomogeneous aluminum nitride layer on the heater material layer. The continuous inhomogeneous aluminum nitride layer is formed such that a top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The continuous inhomogeneous aluminum nitride layer and the heater material layer are patterned into an inhomogeneous aluminum nitride layer and a heater line. A phase change material (PCM) line is formed over the aluminum nitride layer to provide a radio-frequency switch.

Abstract: An electrical impedance imaging sensing system includes a signal processing device, a sensing element and a processor. The signal processing device is electrically coupled to the sensing element and configured for outputting an emission signal. Each of N electrodes of the sensing element is configured to receive a received signal after the emission signal passes through a to-be tested object. The processor is configured to determine whether one of the N electrodes fails according to a plurality of the received signal; in response to the failure of the electrode, compensate the received signal of the failed electrode; and generate an electrical impedance image pre-processing data according to the received signal.