Abstract: An image display method, comprising the following steps: receiving an image signal from a graphics processor by an image processor, wherein the image signal is configured to drive a display panel to display a main image; enlarging a target area in the main image to form a first enlarged image according to an enlargement command; modifying the first enlarged image into a non-rectangular image to use the non-rectangular image as a second enlarged image; and driving the display panel to display the main image and the second enlarged image simultaneously by the image processor, wherein the second enlarged image is overlapped on the main image.

Abstract: A semiconductor package includes: a die having a conductive pad at a first side of the die; and a redistribution structure over the first side of the die and electrically coupled to the die. The redistribution structure includes: a first dielectric layer including a first dielectric material; a first via in the first dielectric layer, where the first via is electrically coupled to the conductive pad of the die; and a first dielectric structure embedded in the first dielectric layer, where the first dielectric structure includes a second dielectric material different from the first dielectric material, where the first dielectric structure laterally surrounds the first via and contacts sidewalls of the first via.

Abstract: Boundary cells may be provided. A boundary of a first functional cell of a circuit is determined. A first plurality of a first type of dummy cells are placed along a first portion of the determined boundary. The first portion extends in a first direction. Each of the first type of dummy cells comprises first pre-defined dimensions. A second plurality of a second type of dummy cells are placed along a second portion of the determined boundary. The second portion extends in a second direction. Each of the second type of dummy cells comprises second pre-defined dimensions. The second pre-defined dimensions is different than the first pre-defined dimensions.

Abstract: An interfacial layer is provided that binds a hydrophilic interlayer dielectric to a hydrophobic gap-filling dielectric. The hydrophobic gap-filling dielectric extends over and fill gaps between devices in an array of devices disposed between two metal interconnect layers over a semiconductor substrate and is the product of a flowable CVD process. The interfacial layer provides a hydrophilic upper surface to which the interlayer dielectric adheres. Optionally, the interfacial layer is also the product of a flowable CVD process. Alternatively, the interfacial layer may be silicon nitride or another dielectric that is hydrophilic. The interfacial layer may have a wafer contact angle (WCA) intermediate between a WCA of the hydrophobic dielectric and a WCA of the interlayer dielectric.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip having an interconnect structure overlying a substrate. The interconnect structure includes a conductive wire disposed in a dielectric structure. The conductive wire comprises a body structure. A passivation structure overlies the interconnect structure. A bond pad overlies the passivation structure. The bond pad comprises an upper pad structure on the passivation structure and a plurality of lower bond structures extending through the passivation structure to the conductive wire. The lower bond structures respectively comprise a vertical bond structure and a diffusion barrier layer disposed along a lower surface and opposing sidewalls of the vertical bond structure.

Abstract: A system for manufacturing an integrated circuit includes a non-transitory computer readable medium configured to store executable instructions, and a processor coupled to the non-transitory computer readable medium. The processor is configured to execute the executable instructions for placing a set of gate layout patterns on a first layout level, and generating a cut feature layout pattern extending in the first direction. The set of gate layout patterns correspond to fabricating a set of gate structures of the integrated circuit. The cut feature layout pattern is on the first layout level, and overlap each of the layout patterns of the set of gate layout patterns at a same position in the second direction. The cut feature layout pattern identifies a location of a removed portion of a gate structure of the set of gate structures.

Abstract: The embodiments of the disclosure provide a method, apparatus, device and storage medium for presenting information, which relate to the technical field of computers. The method includes: obtaining object search information, in response to the object search information being object category information, determining a target object category corresponding to the object search information, and presenting object information of a plurality of target objects corresponding to the target object category in a search result presentation page; where all the plurality of target objects are different, and object information of a target object includes object attribute information and image resource information of the target object. By employing the above technical solution, when the user is searching the object category, object information of a plurality of target objects different from each other corresponding to the target object category is presented in the search result page.

Abstract: An integrated circuit (IC) device includes an interlayer dielectric (ILD), first and second tower structures embedded in the ILD, and first and second ring regions including portions of the ILD that correspondingly extend around the first and second tower structures. Each of the first and second tower structures includes a plurality of conductive patterns in a plurality of metal layers, and a plurality of vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of conductive patterns and the plurality of vias are coupled to each other to form the corresponding first or second tower structure. The first ring region extends around the first tower structure, without extending around the second tower structure.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A channel selecting method includes configuring a main access point to provide a first coverage area in a wireless communication network and performing a channel scanning on a plurality of communication channels to obtain a first area information; assigning an initial preference score to each of the communication channels and adjusting the initial preference score to a first preference score according to the first area information; transmitting a beacon request message to a communication device located in the first coverage area and having a second coverage area; controlling the communication device to perform another channel scanning on the communication channels to obtain a second area information; adjusting the first preference score of each of the communication channels to a second preference score according to the second area information; selecting the communication channel corresponding to the second preference score with a maximum value as a target channel.

Abstract: Provided are a system for treating wastewater and a cleaning method thereof. The wastewater treatment system includes: a wastewater compartment, a first electrode, a second electrode, an acid compartment, a base compartment, an acid supply apparatus, a base supply apparatus, a control apparatus, and a power supply device. During the cleaning process, the power supply device provides reverse potential to the first and the second electrodes. The control apparatus shut off a first channel so that the acid supply apparatus provides an acid solution to the base compartment through a second channel, and shut off a third channel so that the base supply apparatus provides an alkaline solution to the acid compartment through a fourth channel, without shutting off the wastewater treatment system.

Abstract: An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Abstract: A method for forming a semiconductor memory structure include forming a pillar structure. The pillar structure includes a first conductive layer, a second conductive layer and a data storage material layer between the first and second conducive layers. A sidewall of the first conductive layer, a sidewall of the data storage layer and a sidewall of the second conductive layer are exposed. An oxygen-containing plasma treatment is performed on the pillar structure to form hydrophilic surfaces of the sidewall of the first conductive layer, the sidewall of the data storage layer and the sidewall of the second conductive layer. An encapsulation layer is formed over the pillar structure and the dielectric layer. The encapsulation layer is in contact with the hydrophilic surfaces of the sidewall of the first conductive layer, the sidewall of the data storage layer and the sidewall of the second conductive layer.

Abstract: The present disclosure is directed towards an integrated chip including a first memory cell overlying a substrate. The first memory cell comprises a first data storage layer. A second memory cell is adjacent to the first memory cell. A dielectric layer is disposed laterally between the first memory cell and the second memory cell. An air gap is disposed within the dielectric layer. The air gap is spaced laterally between the first memory cell and the second memory cell.

Abstract: The present disclosure is directed towards an integrated chip including a first memory cell overlying a substrate. The first memory cell comprises a first data storage layer. A second memory cell is adjacent to the first memory cell. A dielectric layer is disposed laterally between the first memory cell and the second memory cell. An air gap is disposed within the dielectric layer. The air gap is spaced laterally between the first memory cell and the second memory cell.

Abstract: Oxindole compounds useful for the treatment of CCR(9) mediated conditions or diseases are provided.

Abstract: Implementations are directed to efficient federated learning of machine learning (ML) model(s) through on-the-fly decompression and compression of model parameters, of the ML model(s), when facilitating forward propagation and/or back propagation at client device(s). For example, implementations can transmit, from a remote system to a client device, a compressed on-device ML model that includes some compressed parameters. Further, the client device can, in performing forward propagation and/or back propagation using the on-device ML model, decompress those compressed parameters on-the-fly as the parameters are needed for the propagation. The propagation will utilize the decompressed parameters that were decompressed on the fly.

Abstract: A device for recycling sulfuric acid is provided. A container has an inner space. An inlet is located on the first side of the container for introducing a liquid containing sulfuric acid and hydrogen peroxide through a pump. An outlet is located on the second side of the container for exhausting the treated liquid from the container, and the first side and the second side are opposite sides. IR lamp and UV lamp are located in the inner space of the container for making contact with the liquid. IR radiation emitted from the IR lamp and UV radiation emitted from the UV lamp decompose the hydrogen peroxide in the liquid to water and oxygen. The IR radiation heats the liquid to 90° C. to 130° C., and the oxygen is exhausted through the air hole.