Abstract: An IC device includes an interlayer dielectric (ILD), a first tower structure embedded in the ILD, and a first ring region including a portion of the ILD that extends around the first tower structure. The first tower structure includes a plurality of first conductive patterns in a plurality of metal layers, and a plurality of first vias between the plurality of metal layers along a thickness direction of the IC device. The plurality of first conductive patterns and the plurality of first vias are coupled to each other to form the first tower structure. The plurality of first conductive patterns is confined by the first ring region, without extending beyond the first ring region. The first tower structure is a dummy tower structure.

Abstract: A method for forming a semiconductor memory structure include forming a pillar structure. The pillar structure includes a first conductive layer, a second conductive layer and a data storage material layer between the first and second conducive layers. A sidewall of the first conductive layer, a sidewall of the data storage layer and a sidewall of the second conductive layer are exposed. An oxygen-containing plasma treatment is performed on the pillar structure to form hydrophilic surfaces of the sidewall of the first conductive layer, the sidewall of the data storage layer and the sidewall of the second conductive layer. An encapsulation layer is formed over the pillar structure and the dielectric layer. The encapsulation layer is in contact with the hydrophilic surfaces of the sidewall of the first conductive layer, the sidewall of the data storage layer and the sidewall of the second conductive layer.

Abstract: The present disclosure is directed towards an integrated chip including a first memory cell overlying a substrate. The first memory cell comprises a first data storage layer. A second memory cell is adjacent to the first memory cell. A dielectric layer is disposed laterally between the first memory cell and the second memory cell. An air gap is disposed within the dielectric layer. The air gap is spaced laterally between the first memory cell and the second memory cell.

Abstract: The present disclosure is directed towards an integrated chip including a first memory cell overlying a substrate. The first memory cell comprises a first data storage layer. A second memory cell is adjacent to the first memory cell. A dielectric layer is disposed laterally between the first memory cell and the second memory cell. An air gap is disposed within the dielectric layer. The air gap is spaced laterally between the first memory cell and the second memory cell.

Abstract: Oxindole compounds useful for the treatment of CCR(9) mediated conditions or diseases are provided.

Abstract: Implementations are directed to efficient federated learning of machine learning (ML) model(s) through on-the-fly decompression and compression of model parameters, of the ML model(s), when facilitating forward propagation and/or back propagation at client device(s). For example, implementations can transmit, from a remote system to a client device, a compressed on-device ML model that includes some compressed parameters. Further, the client device can, in performing forward propagation and/or back propagation using the on-device ML model, decompress those compressed parameters on-the-fly as the parameters are needed for the propagation. The propagation will utilize the decompressed parameters that were decompressed on the fly.

Abstract: A device for recycling sulfuric acid is provided. A container has an inner space. An inlet is located on the first side of the container for introducing a liquid containing sulfuric acid and hydrogen peroxide through a pump. An outlet is located on the second side of the container for exhausting the treated liquid from the container, and the first side and the second side are opposite sides. IR lamp and UV lamp are located in the inner space of the container for making contact with the liquid. IR radiation emitted from the IR lamp and UV radiation emitted from the UV lamp decompose the hydrogen peroxide in the liquid to water and oxygen. The IR radiation heats the liquid to 90° C. to 130° C., and the oxygen is exhausted through the air hole.

Abstract: A semiconductor device that includes a semiconductor substrate, a bottom electrode over the semiconductor substrate, a switching layer over the bottom electrode, a metal ion source layer over the switching layer, and a top electrode over the metal ion source layer. The switching layer includes a compound having aluminum, oxygen, and nitrogen.

Abstract: A semiconductor device includes a first cell. The first cell includes a first functional feature, a first sensitivity region, at least one anchor node, wherein each of the at least one anchor node is different from the first functional feature, and a number of anchor nodes of the at least one anchor node linked to the first functional feature is based on a position of the first functional feature relative to the first sensitivity region. The semiconductor device further includes a second cell abutting the first cell. The second cell includes a second functional feature, wherein the second functional feature satisfies a minimum spacing requirement with respect to the first functional feature.

Abstract: A method includes receiving distillation data including a plurality of out-of-domain training utterances. For each particular out-of-domain training utterance of the distillation data, the method includes generating a corresponding augmented out-of-domain training utterance, and generating, using a teacher ASR model trained on training data corresponding to a target domain, a pseudo-label corresponding to the corresponding augmented out-of-domain training utterance. The method also includes distilling a student ASR model from the teacher ASR model by training the student ASR model using the corresponding augmented out-of-domain training utterances paired with the corresponding pseudo-labels generated by the teacher ASR model.

Abstract: Compounds of formula (A) are provided which are useful in the treatment of diseases or conditions modulated at least in part by CCR6:

Abstract: The present disclosure is drawn to the combination therapy of a C-C Chemokine Receptor 4 (CCR4) antagonist and one or more immune checkpoint inhibitors in the treatment of cancer.

Abstract: Information can be distilled from a global automatic speech recognition (ASR) model to a client ASR model. Many implementations include using an RNN-T model as the ASR model, where the global ASR model includes a global encoder, a joint network, a prediction network, and where the client ASR model includes a client encoder, the joint network, and the prediction network. Various implementations include using principal component analysis (PCA) while training the global ASR model to learn a mean vector and a set of principal components corresponding to the global ASR model. Additional or alternative implementations include training the client ASR model to generate one or more predicted coefficients of the global ASR model.

Abstract: An interfacial layer is provided that binds a hydrophilic interlayer dielectric to a hydrophobic gap-filling dielectric. The hydrophobic gap-filling dielectric extends over and fill gaps between devices in an array of devices disposed between two metal interconnect layers over a semiconductor substrate and is the product of a flowable CVD process. The interfacial layer provides a hydrophilic upper surface to which the interlayer dielectric adheres. Optionally, the interfacial layer is also the product of a flowable CVD process. Alternatively, the interfacial layer may be silicon nitride or another dielectric that is hydrophilic. The interfacial layer may have a wafer contact angle (WCA) intermediate between a WCA of the hydrophobic dielectric and a WCA of the interlayer dielectric.

Abstract: Systems, methods, and devices are described herein for integrated circuit (IC) layout validation. A plurality of IC patterns are collected which include a first set of patterns capable of being manufactured and a second set of patterns incapable of being manufactured. A machine learning model is trained using the plurality of IC patterns. The machine learning model generates a prediction model for validating IC layouts. The prediction model receives data including a set of test patterns comprising scanning electron microscope (SEM) images of IC patterns. Design violations associated with an IC layout are determined based on the SEM images and the plurality of IC patterns. A summary of the design violations is provided for further characterization of the IC layout.

Abstract: A method includes receiving distillation data including a plurality of out-of-domain training utterances. For each particular out-of-domain training utterance of the distillation data, the method includes generating a corresponding augmented out-of-domain training utterance, and generating, using a teacher ASR model trained on training data corresponding to a target domain, a pseudo-label corresponding to the corresponding augmented out-of-domain training utterance. The method also includes distilling a student ASR model from the teacher ASR model by training the student ASR model using the corresponding augmented out-of-domain training utterances paired with the corresponding pseudo-labels generated by the teacher ASR model.

Abstract: Compounds are provided that are useful as immunomodulators. The compounds have the Formula I including stereoisomers and pharmaceutically acceptable salts thereof, wherein R2a, R2b, R3, R3a, R4, R6, R7, R8, A, Z, X1 and n are as defined herein. Methods associated with preparation and use of such compounds, as well as pharmaceutical compositions comprising such compounds, are also disclosed.