Abstract: An apparatus comprises a read/write head having a heater, wherein a low- or non-modulation interface is defined between the head and a magnetic recording medium. A microactuator is coupled to the head. A main actuator is coupled to the microactuator and the head. A controller is coupled to the main actuator, the microactuator, and the head. The controller is configured to control movement of the main actuator and the microactuator in response to a position error signal. The controller is further configured to induce an oscillation in the heater at a predetermined frequency. A detector is coupled to the controller. The detector is configured to sense a disturbance in the PES supplied to the microactuator resulting from the induced heater oscillation, and detect contact between the head and the medium using the PES disturbance.

Abstract: Provided is a joint pattern beam sectorization method and apparatuses for performing the same, wherein the joint pattern beam sectorization method including generating, in a service target region, a pattern sector corresponding to an antenna array including antennas having an identical radiation pattern by using the antenna array and generating pattern beam sectors in the pattern sector through a beamforming using the antennas.

Abstract: A method and apparatus for improving a mobile problem caused by a narrow handover region in a boundary region between virtual cells constructed by a plurality of small base stations are provided. A plurality of Virtual Cells (VCs) include a plurality of Distributed Base Stations (DBSs) whose VCs cooperatively communicate with each other. An Intermediate Distributed Base Station (I-DBS) is located in a region where adjacent at least two VCs among the plurality of VCs are superimposed, and belongs to a different VC according to a time division scheme.

Abstract: An apparatus comprises a slider that includes a fly height sensor. A signal generator is coupled to the slider. The signal generator is configured to generate an AC electrical signal having a DC offset voltage and to adjust the DC offset of the AC electrical signal to a plurality of DC offset voltages. Circuitry is coupled to the fly height sensor and the signal generator. The circuitry is configured to measure fly height of the slider in response to application of the AC electrical signal with varying DC offset voltages to the slider. The circuitry is further configured to determine an extremum of the measured fly heights and generate an output that includes the DC offset voltage associated with the fly height extremum.

Abstract: The disclosure is related to an apparatus and methods for addressing variations in bit error rates amongst data storage segments. In a particular embodiment, an apparatus includes a controller that detects variations in bit error rates amongst different segments of a plurality of segments in a storage medium. The controller also adjusts a read/write operation parameter according to the detected variations amongst the bit error rates in the plurality of segments.

Abstract: Technologies are described herein for adaptive write pole tip protrusion compensation in a storage device having magnetic recording media. Variations in temperature of a head of a storage device are measured for various combinations of values of write-channel parameters during multiple test writes to the recording media. Sensitivity of the head temperature to change in value of the write-channel parameters is determined from the temperature measurements. A ratio of change in write pole tip protrusion of the head to change in head temperature is also determined. From the sensitivity of the head temperature to change in value of the write-channel parameters and the ratio of change in write pole tip protrusion of the head to change in head temperature, a coefficient corresponding to each write-channel parameter is calculated for the head to be utilized in a write pole tip protrusion compensation mechanism of the storage device.

Abstract: In one example embodiment, a system may include a device configured to: receive a first user input to identify at least a portion of video content at a point in the play time of the video content, transmit the identified portion of the video content to a text recognition server, receive, from the text recognition server, at least one word that is detected from the identified video content, display the at least one received word, receive a second user input to select one of the displayed at least one word, and transmit a request to search for information regarding the selected word; and the text recognition server configured to: receive, from the device, the identified portion of the video content, retrieve the at least one word displayed on the video content at the point in the play time of the video content, and transmit, to the device, the at least one word.

Abstract: Provided is a communication method of a base station and a target terminal. Resources used for a channel feedback may be reduced by determining a wireless resource based on information about a channel and information about a mobility of the target terminal in each of at least one route, and by feeding back channel state information.

Abstract: A method and apparatus for improving a mobile problem caused by a narrow handover region in a boundary region between virtual cells constructed by a plurality of small base stations are provided. A plurality of Virtual Cells (VCs) include a plurality of Distributed Base Stations (DBSs) whose VCs cooperatively communicate with each other. An Intermediate Distributed Base Station (I-DBS) is located in a region where adjacent at least two VCs among the plurality of VCs are superimposed, and belongs to a different VC according to a time division scheme.

Abstract: A through substrate structure, an electronic device package using the same, and methods for manufacturing the same are disclosed. First, a via hole pattern is formed by etching an upper surface of a first substrate. A pattern layer of a second substrate is formed on the first substrate by filling the via hole pattern with a material for the second substrate by reflow. A via hole pattern is formed in the pattern layer of the second substrate by patterning the upper surface of the first substrate. Moreover, a via plug filling the via hole pattern is formed by a plating process, for example, thereby forming a through substrate structure, which can be used in an electronic device package.

Abstract: An apparatus and a method for configuring and managing/controlling a cluster, which is a set of Base Stations (BSs) for transmitting signals cooperatively, are provided. The method includes broadcasting cluster set information indicating information about a plurality of clusters including a serving BS to a User Equipment (UE), receiving a report of information about Received Signal Strength Indicators (RSSIs) of control signals transmitted from BSs included in the plurality of clusters from the UE, and assigning any one of the plurality of clusters to a cluster for servicing the UE based on the information about the RSSIs of the control signals.

Abstract: Disclosed is an apparatus and method for an MBS service in a BWA system. An apparatus of a base station includes a time controller, a CAC processor, and a buffer controller. The time controller manages a broadcast start time and a broadcast end time and generates a broadcast start message at a predetermined time before the actual broadcast start time. Upon receipt of the generated broadcast start message from the time controller, the CAC processor calculates a capacity decrease due to broadcast service and subtracts the capacity decrease from the current available capacity to update the available capacity. Upon receipt of the generated broadcast start message from the time controller, the buffer controller controls the buffer occupation of unicast traffic in order to provide the buffer space required for a broadcast service.

Abstract: A through substrate structure, an electronic device package using the same, and methods for manufacturing the same are disclosed. First, a via hole pattern is formed by etching an upper surface of a first substrate. A pattern layer of a second substrate is formed on the first substrate by filling the via hole pattern with a material for the second substrate by reflow. A via hole pattern is formed in the pattern layer of the second substrate by patterning the upper surface of the first substrate. Moreover, a via plug filling the via hole pattern is formed by a plating process, for example, thereby forming a through substrate structure, which can be used in an electronic device package.

Abstract: Provided is a communication method of a base station and a target terminal. Resources used for a channel feedback may be reduced by determining a wireless resource based on information about a channel and information about a mobility of the target terminal in each of at least one route, and by feeding back channel state information.

Abstract: Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

Abstract: A semiconductor integrated circuit device having a 6F2 layout is provided. The semiconductor integrated circuit device includes a substrate; a plurality of unit active regions disposed in the substrate and extending in a first direction; first and second access transistors including first and second gate lines disposed on the substrate and extending across the unit active regions in a second direction forming an acute angle with the first direction; a first junction area disposed in the substrate between the first and second gate lines and second junction areas disposed on sides of the first and second gate lines where the first junction area is not disposed; a plurality of bitlines disposed on the substrate and extending in a third direction forming an acute angle with the first direction; and a plurality of bitline contacts directly connecting the first junction area and the bitlines.

Abstract: Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

Abstract: Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

Abstract: Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

Abstract: A semiconductor device including storage nodes and a method of manufacturing the same: The method includes forming an insulating layer and an etch stop layer on a semiconductor substrate; forming storage node contact bodies to be electrically connected to the semiconductor substrate by penetrating the insulating layer and the etch stop layer; forming landing pads on the etch stop layer to be electrically connected to the storage node contact bodies, respectively; and forming storage nodes on the landing pads, respectively, the storage nodes of which outward sidewalls are completely exposed and which are arranged at an angle to each other.