Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.

Abstract: A stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.

Abstract: A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 .ANG./min, and preferably above 3000 .ANG./min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.

Abstract: A substrate processing system including a vacuum chamber; a pedestal which holds a substrate during processing; and a gas distribution structure which during processing is located adjacent to and distributes a process gas onto a surface of the substrate that is held on the pedestal for processing. The gas distribution structure includes a gas distribution faceplate including a plurality of gas distribution holes formed therethrough, wherein the holes of at least a first set of the plurality of holes pass through the faceplate at angles other than perpendicular to the surface of substrate.