Abstract: A magnetoresistive sensor element has a first magnetic layer structure, a second magnetic layer structure, and a barrier layer. The resistance R1 of the first magnetic layer structure, the resistance R2 of the second magnetic layer structure and resistance-area product RA define a characteristic length ? of the magnetoresistive sensor element by a functional relation. The contact spacing X0 has an m-fold value of the characteristic length ? with 0.1<m<20, the first contact terminal a first edge spacing X1 from the edge of the first magnetic layer structure with an n-fold value of the characteristic length ? with 0.5<n, the second contact terminal a second edge spacing X2 from the edge of the first magnetic layer structure with a p-fold value of the characteristic length ? with 0.5<p, the resistance R1 a q-fold value of the resistance R2 with q>1.

Abstract: An apparatus for detecting a change of a physical quantity by means of a conductor structure having a processor for applying a defined supply signal to the conductor structure so as to effect a current flow through the conductor structure, the current flow being changeable by the physical quantity, and a detector for detecting a magnetic field caused by the current flow through the conductor structure by means of a magnetoresistive element allocated to the conductor structure, a change of the physical quantity being associated with a change of the detected magnetic field.

Abstract: A sensor has a substrate having a mechanically deformable region, a magnetostrictive spin-valve sensor element being arranged to detect a mechanical deformation of the mechanically deformable region. On the substrate, there is a device for generating a controllable magnetic field by Which a performance of the sensor element is influenced.

Abstract: A method of performing an on-wafer function testis provided for multiple magnetic field sensor elements on a wafer. Each sensor element includes a magnetic-field-sensitive structure and a current conductor structure. The current conductor structure provides a test magnetic field in response to a test signal, and a change in an electrical characteristic of the respective magnetic-field-sensitive structure is sensed. The functionality of the respective magnetic field sensor element is then evaluated based on electrical characteristic change.

Abstract: A sensor has a substrate having a mechanically deformable region, a magnetostrictive spin-valve sensor element being arranged to detect a mechanical deformation of the mechanically deformable region. On the substrate, there is a device for generating a controllable magnetic field by which a performance of the sensor element is influenced.

Abstract: A composite arrangement has a substrate material with a main surface, a metal-insulator arrangement including a metal sheet with an insulation area on the main surface, and a magnetoresistive structure on the metal-insulator arrangement. Thereupon, a cover layer arrangement is heated, so that the same at least partially covers the magnetoresistive structure with a target thickness D, and finally the magnetoresistive structure is heated by light radiation with given wavelength ?. The absorbed portion of the emitted radiation depends on the actual thickness D? of the cover layer arrangement and the wavelength ?, wherein the target thickness D of the cover layer arrangement is adjusted so that, if the cover layer deviates from the target thickness D in a range of ±20% with reference to the target thickness D, a change of the absorbed portion of the emitted radiation in the magnetoresistive structure of less than ±40% is caused.

Abstract: In a method of determining residual error compensation parameters for a magnetoresistive angle sensor providing a first measurement signal depending on a rotational angle the step of generating a plurality of value pairs for a plurality of rotational angle values is provided, wherein each value pair has a rotational angle value and an associated measurement signal value. The method further includes ascertaining a sinusoidal fit function the course of which is adapted to the plurality of value pairs. Finally, residual error compensation parameters can be generated from a difference between the ascertained sinusoidal fit function and the associated measurement signal values of the measurement signal for the plurality of rotational angle values.

Abstract: A sensor has a substrate in which a mechanically deformable area is formed. A first magnetostrictive multilayer sensor element and a second magnetostrictive multilayer sensor element are formed in the mechanically deformable area, wherein the first magnetostrictive multilayer sensor element and the second magnetostrictive multilayer sensor element are connected to each other and implemented such that when generating a mechanical deformation of the mechanically deformable area, the electric resistance of the first magnetostrictive multilayer sensor element changes in an opposite way to the electric resistance of the second magnetostrictive multilayer sensor element, or the electric resistance of the first magnetostrictive multilayer sensor element remains unchanged.

Abstract: In a method of determining residual error compensation parameters for a magnetoresistive angle sensor providing a first measurement signal depending on a rotational angle the step of generating a plurality of value pairs for a plurality of rotational angle values is provided, wherein each value pair has a rotational angle value and an associated measurement signal value. The method further includes ascertaining a sinusoidal fit function the course of which is adapted to the plurality of value pairs. Finally, residual error compensation parameters can be generated from a difference between the ascertained sinusoidal fit function and the associated measurement signal values of the measurement signal for the plurality of rotational angle values.

Abstract: The invention relates to a force sensor having a layer sequence with at least two electrically conductive, magnetic layers which are arranged in succession and spaced apart from one another in a vertical direction. In each case, one separating layer is arranged between two adjacently arranged magnetic layers. Adjacently arranged magnetic layers have magnetostriction constants which are different from zero and have different signs. Each of the magnetic layers have one magnetization direction. In the quiescent state of the layer sequence, the magnetization directions of two adjacent magnetic layers are oriented essentially in parallel owing to ferromagnetic coupling, or essentially in antiparallel owing to antiferromagnetic coupling. Furthermore, the invention relates to an array for determining the mechanical deformation in a first direction of a carrier, a pressure sensor having such an array, and a method for determining a force acting on a force sensor.

Abstract: The invention relates to a force sensor having a layer sequence for determining a force acting on the layer sequence along a predefined force axis. The layer sequence includes, arranged successively in a vertical direction, a first magnetic layer with a first magnetization direction, a separating layer and a second magnetic layer with a second magnetization direction. Here, the first magnetization direction is secured with respect to the layer sequence. The second magnetic layer has a magnetostriction constant that is different from zero and a uniaxial magnetic anisotropy with an anisotropy axis. The uniaxial magnetic anisotropy is generated using shape anisotropy. The second magnetization direction encloses an angle of more than 0° and less than 90° with the force axis in the quiescent state, and the anisotropy axis encloses an angle of more than 0° and less than 90° with the force axis.

Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.

Abstract: A magnetic field sensor element includes a permanently magnetizable magnetic field sensor structure with a first and a second sensor element contact, wherein the permanently magnetizable magnetic field sensor structure has permanent magnetization, and wherein a magnetic-field-dependent electrical characteristic of the magnetic field sensor structure can be sensed via the sensor element contacts, and a current conductor structure with a first and a second current conductor contact, wherein the current conductor structure is formed so that a magnetization signal can be applied between the first and the second contact, to obtain a defined magnetization magnetic field component in the magnetic field sensor structure, in order to effect permanent, local magnetization of the magnetic field sensor structure, and so that also a test signal can be applied between the current conductor contacts, to obtain a defined test magnetic field component in the magnetic field sensor structure.

Abstract: A sensor has a substrate having a mechanically deformable region, a magnetostrictive spin-valve sensor element being arranged to detect a mechanical deformation of the mechanically deformable region. On the substrate, there is a device for generating a controllable magnetic field by which a performance of the sensor element is influenced.