Abstract: A main object is to provide a surface emitting laser device capable of suppressing variation in interval between an element unit and a driver unit while suppressing breakage of the element unit.

Abstract: Provided is a surface emitting laser apparatus capable of improving the yield. The present technology includes: a stacked structure having at least one light emission unit including a first oxidized constriction layer and an electrode unit including a second oxidized constriction layer at different positions in an in-plane direction; and a conductive layer that makes the light emission unit and the electrode unit conductive with each other, in which the conductive layer includes a first portion covering a region between the light emission unit and the electrode unit, a second portion covering a near half part of the electrode unit, the near half part being relatively close to the light emission unit, and a third portion covering a far half part of the electrode unit, the far half part being relatively far from the light emission unit, in the stacked structure, and a degassing unit is provided in the first portion and/or the second portion and the third portion.

Abstract: A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.

Abstract: [Object] An object of the present technology is to provide a light-emitting element array capable of preventing a light-emitting element from being damaged and a method of producing the light-emitting element array. [Solving Means] A light-emitting element array according to the present technology includes: a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.

Abstract: To provide a method of manufacturing a light-emitting module capable of accurately arranging a plurality of light-emitting elements at narrow intervals, and a light-emitting module manufactured by the method of manufacturing, and, moreover, a device on which the light-emitting module is mounted.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: A light emitting element according to the present disclosure includes a first light reflecting layer 41, a laminated structure 20, and a second light reflecting layer 42 laminated to each other. The laminated structure 20 includes a first compound semiconductor layer 21, a light emitting layer 23, and a second compound semiconductor layer 22 laminated to each other from a side of the first light reflecting layer. Light from the laminated structure 20 is emitted to an outside via the first light reflecting layer 41 or the second light reflecting layer 42. The first light reflecting layer 41 has a structure in which at least two types of thin films 41A and 41B are alternately laminated to each other in plural numbers. A film thickness modulating layer 80 is provided between the laminated structure 20 and the first light reflecting layer 41.

Abstract: A stereolithography apparatus according to an embodiment of the present technology includes a light source unit, a photo-detector, and a control unit. The light source unit includes a plurality of light-emitting elements that emits light for curing a photo-curing resin. The photo-detector detects the light emitted from the light source unit. The control unit generates an amount-of-light profile indicating an amount-of-light distribution of the light on the basis of the light detected by the photo-detector and controls light emission of the plurality of light-emitting elements on the basis of the amount-of-light profile.

Abstract: A light emitting element includes: a laminated structure 20 obtained by laminating a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22; a first light reflecting layer 41 disposed on a first surface side of the first compound semiconductor layer 21; a second light reflecting layer 42 disposed on a second surface side of the second compound semiconductor layer 22; and light convergence/divergence changing means 50. The first light reflecting layer 41 is formed on a concave mirror portion 43. The second light reflecting layer 42 has a flat shape. When light generated in the active layer 23 is emitted to the outside, a light convergence/divergence state before the light is incident on the light convergence/divergence changing means 50 is different from a light convergence/divergence state after the light passes through the light convergence/divergence changing means 50.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A stereolithography apparatus according to an embodiment of the present technology includes a light source unit, a photo-detector, and a control unit. The light source unit includes a plurality of light-emitting elements that emits light for curing a photo-curing resin. The photo-detector detects the light emitted from the light source unit. The control unit generates an amount-of-light profile indicating an amount-of-light distribution of the light on the basis of the light detected by the photo-detector and controls light emission of the plurality of light-emitting elements on the basis of the amount-of-light profile.

Abstract: A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

Abstract: A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

Abstract: A surface light-emission laser device includes: an active layer; a first DBR layer and a second DBR layer that interpose the active layer therebetween; and an insulation film and a metal layer that are provided at a position that faces a light-emission region of the active layer, and correspond to an end part of a reflection mirror on the second DBR layer side as viewed from the active layer. The surface light-emission laser device further includes: a first contact layer provided in the first DBR layer or in contact with the first DBR layer; a second contact layer provided in contact with the second DBR layer; a first electrode layer provided in contact with the first contact layer; and a second electrode layer that is in contact with the second contact layer, and provided at a position that does not face the light-emission region of the active layer.

Abstract: A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror.

Abstract: A light emitting element assembly includes: a light emitting element (21); a light emitting element drive unit (30); a first joining member (41) connected to an electrode provided in the light emitting element (21); and a second joining member (42) provided on the light emitting element drive unit (30).

Abstract: A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.

Abstract: A surface emission laser driving method according to an embodiment of the present technology includes the following two steps. (A) Generating drive pulses to be sequentially outputted to, out of a plurality of surface emission lasers disposed on a same substrate, each of the surface emission lasers selected as light-emission targets, on the basis of the number of surface emission lasers selected as the light-emission targets and a monitoring temperature that is immediately prior to light emission of each of the surface emission lasers selected as the light-emission targets. (B) Outputting the generated drive pulses to each of the surface emission lasers selected as the light-emission targets.

Abstract: A surface-emitting laser according to an embodiment of the present disclosure includes a current constriction region having an opening and formed by impurities injected into a laminate from side of a second semiconductor layer; and a first DBR layer on side of a first semiconductor layer and a second DBR layer on the side of the second semiconductor layer having the laminate interposed therebetween at a position facing the opening. At the opening, an opening diameter close to the first DBR layer is larger than an opening diameter close to the second DBR layer.

Abstract: A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.