Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

Abstract: A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm?3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm?3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

Abstract: A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357?a?0.408), and has a thickness of from 10 nm to 20 nm both inclusive.

Abstract: A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm?3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm?3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

Abstract: Disclosed herein is a method for growing a semiconductor layer which includes the step of growing a semiconductor layer of hexagonal crystal structure having the (11-22) or (10-13) plane direction on the (1-100) plane of a substrate of hexagonal crystal structure.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract: A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga1-xInxNyAs1-y-zSbz mixed crystal (0?x<1, 0<y<1, 0?z<1, and 0<y+z<1) and a barrier layer made of a GaNvAs1-v mixed crystal (0?v<1) are layered. The impurity concentration of hydrogen in the active layer is 3×1019 cm?3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm?3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized. The hydrogen concentration can be decreased by decreasing the flow rate of the organic nitrogen compound used as a raw material of nitrogen when the active layer is grown.

Abstract: For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

Abstract: For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

Abstract: To provide an integrated gas valve in which there is no turbulent portion in carrying gas so that process gas supplied into the carrying gas is not diffused.

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract: The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.

Abstract: A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

Abstract: For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

Abstract: An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.

Abstract: A window structure type AlGaInP semiconductor laser able to suppress abnormal growth in the vicinity of a ridge and having good surface morphology, wherein a least one step-like structure is provided on a substrate having a surface tilted to a [0-1-1] direction from a (100) plane, a semiconductor stack is formed on the substrate and comprises an active layer including two types of Group III elements including at least indium (In) and Group V elements including phosphorus (P), a cladding layer of a first conductivity, a cladding layer of a second conductivity, end surfaces of an active layer serve as end surfaces of a resonator, a light guide is formed between and the end surfaces of the resonator, and the light guide is arranged at an upper step side of the step-like structure so that a portion of the light guide not including resonator end surfaces is positioned in the vicinity of the step-like structure and so that the resonator end surface portions of the light guide are farther from the step-lik