Abstract: A display device includes: a display panel which displays an image; an intermediate frame on which the display panel is disposed; and a lower frame coupled to the intermediate frame and in which a coupling hole is defined. The intermediate frame defines: a support portion thereof extended facing a lower surface of the display panel, and a coupling portion thereof extending from a lower surface of the support portion and toward the lower frame. The coupling portion of the intermediate frame extends through the coupling hole defined in the lower frame to be attached to a surface of the lower frame.

Abstract: A display apparatus is disclosed. In one aspect, the display apparatus includes a flexible display panel configured to display images and a first frame arranged on the front surface of the flexible display panel and curved in a first direction. The display apparatus also includes a second frame arranged on a rear surface of the flexible display panel and curved in the first direction and a spacer arranged on at least one of the first and second frames. The spacer is configured to adjust the distance between the first and second frames.

Abstract: Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment.

Abstract: Provided are a polymer containing a thiophene unit and a thienylenevinylene unit, and an organic field effect transistor and an organic solar cell containing the polymer. The film may be formed by coating a substrate with a polymer containing a thiophene unit and a thienylenevinylene unit using a solution process. Therefore, the production cost may be reduced and a large-scale device may be suitably manufactured since there is no need for an expensive vacuum system to form films. Also, the polymer according to one embodiment of the present invention containing a thiophene unit and a thienylenevinylene unit has very excellent flatness since the thiophene unit is continuously coupled with a vinyl group having excellent flatness. Therefore, the polymer may be useful in further improving the charge mobility since it has high crystallinity caused by the improved ordering property between molecules. Such crystallinity may be further improved by the heat treatment.

Abstract: One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

Abstract: One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

Abstract: One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

Abstract: Mask shops typically use carbon to repair any clear defects identified on a mask, irrespective of the type of mask. However, carbon can have different characteristics than the original patterning material on the mask. Therefore, a mask that is repaired using carbon may not optically perform as if it were defect-free. An automated method of repairing a clear defect on an attenuated phase shifting mask (PSM) provides an optimized plug size/shape. In this method, a repair solution to the clear defect can be simulated, thereby allowing the repair decision for an attenuated PSM to be advantageously made at the same time that inspection is done and before actual repair. Simulation can include performing model-based OPC on the repair solution.

Abstract: One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

Abstract: A method for performing layout verification involves identifying feature centerlines in a mask layout, and then performing lithography simulation along the centerlines to generate a set of intensity distributions. At each local maxima or minima in the intensity distributions, further lithography simulation can be performed to determine an exposure pattern width at those local maxima/minima (check positions). The exposure pattern widths can then be evaluated to determine whether an actual pinch or bridge defect will be generated at those locations. If defect generation is likely (based on the lithographical simulation) at a particular location, the corresponding portion of the mask layout can be redesigned to avoid defect generation during actual production. In this method, accurate layout verification can be performed with a minimum of time-consuming lithography modeling.

Abstract: A method for performing layout verification involves identifying feature centerlines in a mask layout, and then performing lithography simulation along the centerlines to generate a set of intensity distributions. At each local maxima or minima in the intensity distributions, further lithography simulation can be performed to determine an exposure pattern width at those local maxima/minima (check positions). The exposure pattern widths can then be evaluated to determine whether an actual pinch or bridge defect will be generated at those locations. If defect generation is likely (based on the lithographical simulation) at a particular location, the corresponding portion of the mask layout can be redesigned to avoid defect generation during actual production. In this method, accurate layout verification can be performed with a minimum of time-consuming lithography modeling.

Abstract: A method for recording and/or simultaneously monitoring voice and screen activities of a computer work station screen from another computer and reducing the processing load on the computers. Further it provides a method to score and rate an agent using the computer work station while simultaneously monitoring the voice and screen activities of the agent on his computer work station. In another embodiment it provides a method for only updating the portions of the agent's computer work station screen which are changed on the other computer being used to moniter without updating the areas not changed.

Abstract: Mask shops typically use carbon to repair any clear defects identified on a mask, irrespective of the type of mask. However, carbon can have different characteristics than the original patterning material on the mask. Therefore, a mask that is repaired using carbon may not optically perform as if it were defect-free. An automated method of repairing a clear defect on an attenuated phase shifting mask (PSM) provides an optimized plug size/shape. In this method, a repair solution to the clear defect can be simulated, thereby allowing the repair decision for an attenuated PSM to be advantageously made at the same time that inspection is done and before actual repair. Simulation can include performing model-based OPC on the repair solution.

Abstract: Mask shops typically use carbon to repair any clear defects identified on a mask, irrespective of the type of mask. However, carbon can have different characteristics than the original patterning material on the mask. Therefore, a mask that is repaired using carbon may not optically perform as if it were defect-free. An automated method of repairing a clear defect on an attenuated phase shifting mask (PSM) provides an optimized plug size/shape. In this method, a repair solution to the clear defect can be simulated, thereby allowing the repair decision for an attenuated PSM to be advantageously made at the same time that inspection is done and before actual repair. Simulation can include performing model-based OPC on the repair solution.

Abstract: A method for recording and/or simultaneously monitoring voice and screen activities of a computer work station screen from another computer and reducing the processing load on the computers. Further it provides a method to score and rate an agent using the computer work station while simultaneously monitoring the voice and screen activities of the agent on his computer work station. In another embodiment it provides a method for only updating the portions of the agent's computer work station screen which are changed on the other computer being used to moniter without updating the areas not changed.

Abstract: Mask shops typically use carbon to repair any clear defects identified on a mask, irrespective of the type of mask. However, carbon can have different characteristics than the original patterning material on the mask. Therefore, a mask that is repaired using carbon may not optically perform as if it were defect-free. An automated method of repairing a clear defect on an attenuated phase shifting mask (PSM) provides an optimized plug size/shape. In this method, a repair solution to the clear defect can be simulated, thereby allowing the repair decision for an attenuated PSM to be advantageously made at the same time that inspection is done and before actual repair. Simulation can include performing model-based OPC on the repair solution.